AOTF10B60D 600V, 10A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copackage diode is targeted for minimal losses in motor control applications. VCE IC (TC=100°C) 600V 10A VCE(sat) (TC=25°C) 1.53V Top View C TO-220F G AOTF10B60D G C E E Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE IC Pulsed Collector Current, Limited by TJmax I CM Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM TC=25°C TC=100°C Units V ±20 V 20$ Continuous Collector TC=25°C TC=100°C Current Continuous Diode Forward Current AOTF10B60D 600 10$ 40 A 40 A 20 IF A 10 A Diode Pulsed Current, Limited by TJmax I FM 40 A Short circuit withstanding time VGE = 15V, VCE ≤ 400V, Delay between short circuits ≥ 1.0s, TC=150°C t SC 10 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case PD T J , T STG TL Symbol R θ JA R θ JC R θ JC 42 16.7 W -55 to 150 °C 300 °C AOTF10B60D 65 3 Units °C/W °C/W 4 °C/W $:TO220F IC Follow TO220 Rev0: July 2012 www.aosmd.com Page 1 of 9 AOTF10B60D Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) VF V GE(th) I CES I GES g FS Min IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=10A Collector-Emitter Saturation Voltage VGE=0V, IC=10A Diode Forward Voltage VCE=600V, VGE=0V Zero Gate Voltage Collector Current Gate-Emitter leakage current Forward Transconductance Max Units V 600 - - TJ=25°C - 1.53 1.8 TJ=125°C - 1.75 - TJ=150°C - 1.81 - TJ=25°C - 1.52 1.85 TJ=125°C - 1.48 - TJ=150°C - 1.44 - - 5.8 - TJ=25°C - - 10 TJ=125°C - - 200 TJ=150°C - - 1000 VCE=VGE, IC=1mA Gate-Emitter Threshold Voltage Typ V V V µA VCE=0V, VGE=±20V - - ±100 VCE=20V, IC=10A - 4.8 - - 824 - pF - 68 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz nA S C oes Output Capacitance C res Reverse Transfer Capacitance - 2.7 - pF Qg Total Gate Charge - 17.4 - nC Q ge Gate to Emitter Charge - 6.2 - nC - 6.3 - nC - 43 - A - 3.2 - Ω VGE=15V, VCE=480V, IC=10A Q gc Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between VGE=15V, VCE=400V, RG=30Ω I C(SC) short circuits ≥ 1.0s VGE=0V, VCE=0V, f=1MHz Gate resistance Rg SWITCHING PARAMETERS, (Load Iductive, TJ=25°C) t D(on) Turn-On DelayTime - 10 - ns tr Turn-On Rise Time - 15 - ns t D(off) Turn-Off Delay Time - 72 - ns tf Turn-Off Fall Time - 8.8 - ns E on Turn-On Energy - 0.26 - mJ E off Turn-Off Energy - 0.07 - mJ E total t rr Total Switching Energy - 0.33 - mJ Diode Reverse Recovery Time - 105 - Q rr Diode Reverse Recovery Charge - 0.25 - ns µC - 5 - A ns TJ=25°C VGE=15V, VCE=400V, IC=10A, RG=30Ω, Parasitic Ιnductance=100nH TJ=25°C IF=10A,dI/dt=200A/µs,VCE=400V I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Iductive, TJ=150°C) t D(on) Turn-On DelayTime - 10.4 - tr Turn-On Rise Time - 15.6 - ns t D(off) Turn-Off Delay Time - 91 - ns tf Turn-Off Fall Time - 10.4 - ns E on Turn-On Energy - 0.35 - mJ E off Turn-Off Energy - 0.16 - mJ E total t rr Total Switching Energy - 0.51 - mJ Diode Reverse Recovery Time - 194 - Q rr Diode Reverse Recovery Charge - 0.55 - ns µC I rm Diode Peak Reverse Recovery Current - 6.3 - A TJ=150°C VGE=15V, VCE=400V, IC=10A, RG=30Ω, Parasitic Inductance=100nH TJ=150°C IF=10A,dI/dt=200A/µs,VCE=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: July 2012 www.aosmd.com Page 2 of 9 AOTF10B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 60 20V 20V 60 17V 15V IC (A) IC (A) 50 40 13V 50 17V 40 15V 13V 30 30 20 VGE= 7V 10 11V 20 9V 10 11V 9V VGE=7V 0 0 0 1 2 3 4 5 6 7 0 VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 1 2 3 4 5 6 7 VCE(V) Fig 2: Output Characteristic (Tj=150°C ) 50 50 VCE=20V -40°C -40°C 40 40 150°C 30 30 150°C IF (A) 20 20 10 10 0 25°C 0 4 7 10 13 0.0 16 VGE(V) Fig 3: Transfer Characteristic VCE(sat) (V) Time (µ µS) IC=20A IC=10A 2 1 1.0 1.5 2.0 2.5 3.0 VF (V) Fig 4: Diode Characteristic 4 3 0.5 IC=5A 45 45 40 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 0 25 50 75 100 125 150 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev0: July 2012 www.aosmd.com Current(A) IC (A) 25°C 0 5 8 11 14 17 20 VGE (V) Fig 6: VGE vs. Short Circuit Time (VCE=400V,TC=25°C ) Page 3 of 9 AOTF10B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=480V IC=10A 12 Cies 9 Capacitance (pF) IC (A) 1000 6 3 Coes 100 10 0 Cres 1 0 4 8 12 16 20 0 5 Qg(nC) Fig 7: Gate-Charge Characteristics 10 15 20 25 30 35 40 VCE(V) Fig 8: Capacitance Characteristic Ic (A) 100 10 1 10 100 VCE (V) Fig 10: Reverse Bias SOA (Tj=150°C,V GE=15V) 1,000 50 Power Disspation (W) 40 30 20 10 0 25 50 75 100 125 150 TCASE(°C) Fig 11: Power Disspation as a Function of Case Rev0: July 2012 www.aosmd.com Page 4 of 9 AOTF10B60D ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10,000 Td(off) Tf Td(on) Tr Td(off) Tf Switching Time (nS) Switching Time (nS) 1000 100 10 Tr 100 10 1 1 0 5 10 15 20 IC (A) Figure 12: Switching Time vs. IC (Tj=150°C,V GE=15V,VCE=400V,Rg=30Ω Ω) 25 0 1000 50 100 150 200 250 300 Rg (Ω Ω) Figure 13: Switching Time vs. Rg (Tj=150°C,V GE=15V,VCE=400V,IC=10A) 350 10 Td(off) Tf Td(on) Tr 8 100 VGE(TH)(V) Switching Time (nS) Td(on) 1,000 6 4 10 2 0 1 0 100 150 TJ (°C) Figure 14: Switching Time vs.Tj ( VGE=15V,VCE=400V,IC=10A,Rg=30Ω Ω) Rev0: July 2012 50 200 www.aosmd.com 0 30 60 90 TJ (°C) Figure 15: VGE(TH) vs. Tj 120 150 Page 5 of 9 AOTF10B60D ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.5 1.5 Eoff Eoff Eon Eon 1.2 Switching Energy (mJ) SwitchIng Energy (mJ) 1.2 Etotal 0.9 0.6 0.3 Etotal 0.9 0.6 0.3 0 0.0 0 5 10 15 20 IC (A) Figure 16: Switching Loss vs. IC (Tj=150°C,V GE=15V,VCE=400V,Rg=30Ω Ω) 25 0 0.8 50 150 200 250 Rg (Ω Ω) Figure 17: Switching Loss vs. Rg (Tj=150°C,V GE=15V,VCE=400V,IC=10A) 300 0.8 Eoff Eoff Eon Eon 0.6 Switching Energ y (mJ) Etotal Switching Energy (mJ) 100 0.4 0.2 0 0.6 Etotal 0.4 0.2 0.0 0 Rev0: July 2012 25 50 75 100 125 150 TJ (°C) Figure 18: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=10A,Rg=30Ω Ω) 175 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 19: Switching Loss vs. VCE (Tj=150°C,V GE=15V,IC=10A,Rg=30Ω Ω) 500 Page 6 of 9 AOTF10B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-03 2.2 15A 1.E-04 1.7 10A VSD (V) 5A IF=1A 1.E-06 VCE=400V 0.7 1.E-07 1.E-08 0.2 0 25 50 75 100 125 150 175 0 50 75 100 125 150 Temperature (°C ) Fig 21: Diode Forward voltage vs. Junction Temperature Temperature (°C ) Fig 20: Diode Reverse Leakage Current vs. Junction Temperature 1000 100 900 90 800 80 150°C 50 400 40 300 30 25°C 200 25°C Trr (nS) Qrr 500 10 15 20 150°C 4 2 25°C 0 0 0 IF(A) Fig 22: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 80 700 6 25°C 50 25 800 8 S 0 5 150 10 0 0 Trr 100 20 Irm 150°C 10 150°C 200 60 175 12 250 70 600 25 300 Irm(A) Qrr (nC) 700 100 13V 1.2 S ICE(S) (A) VCE=600V 1.E-05 5 10 15 20 25 IS (A) Fig 23: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 200 20 160 16 70 150°C 600 60 400 40 300 30 25°C 200 20 150°C Irm 100 25°C 0 100 200 120 80 25°C Trr 8 S 150°C 40 4 10 0 25°C 0 400 500 600 700 800 900 di/dt (A/µ µS) Fig 24: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=10A) Rev0: July 2012 12 S 50 Trr (nS) Qrr Irm(A) Qrr (nC) 150°C 500 300 www.aosmd.com 100 200 300 0 400 500 600 700 800 900 di/dt (A/µ µS) Fig 25: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=10A) Page 7 of 9 AOTF10B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for IGBT Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 27: Normalized Maximum Transient Thermal Impedance for Diode Rev0: July 2012 www.aosmd.com Page 8 of 9 AOTF10B60D Rev0: July 2012 www.aosmd.com Page 9 of 9