MICROSEMI APTGT600DU60G

APTGT600DU60G
VCES = 600V
IC = 600A* @ Tc = 80°C
Dual common source
Trench + Field Stop IGBT®
Power Module
C1
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
C2
Q1
Q2
G1
G2
E1
E2
E
C1
E
C2
E1
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
G2
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
600
700 *
600 *
800
±20
2300
Tj = 150°C
1200A @ 550V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
June, 2006
E2
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater
than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APTGT600DU60G – Rev 1
G1
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
APTGT600DU60G
All ratings @ Tj = 25°C unless otherwise specified
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 600A
Tj = 150°C
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
Test Conditions
VR=600V
IF = 600A
VGE = 0V
IF = 600A
VR = 300V
di/dt =5000A/µs
Er
5.0
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 600A
R G = 2Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 600A
R G = 2Ω
Tj = 25°C
VGE = ±15V
Tj = 150°C
VBus = 300V
IC = 600A
Tj = 25°C
R G = 2Ω
Tj = 150°C
Fall Time
Tf
Min
Reverse Recovery Energy
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1.4
1.5
5.8
Typ
49
3.1
1.5
130
55
250
Max
Unit
750
1.8
µA
6.5
800
V
nA
Max
Unit
V
nF
ns
60
145
60
320
ns
80
3
5.5
17
21
Min
600
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Typ
Typ
mJ
mJ
Max
350
550
600
1.5
1.4
120
210
27
57
6.9
14.1
Unit
V
µA
A
1.9
V
ns
µC
June, 2006
Symbol Characteristic
mJ
2-5
APTGT600DU60G – Rev 1
Electrical Characteristics
APTGT600DU60G
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.065
0.11
Unit
°C/W
V
175
125
100
5
3.5
280
°C
N.m
g
June, 2006
SP6 Package outline (dimensions in mm)
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3-5
APTGT600DU60G – Rev 1
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTGT600DU60G
Typical Performance Curve
Output Characteristics (VGE=15V)
1200
T J = 150°C
TJ =25°C
1000
1000
VGE =13V
VGE =19V
TJ=125°C
800
800
T J=150°C
IC (A)
IC (A)
Output Characteristics
1200
600
400
VGE =15V
600
VGE =9V
400
200
200
TJ=25°C
0
0
0
0.5
1
1.5
V CE (V)
2
0
2.5
40
T J=25°C
30
E (mJ)
IC (A)
800
T J=125°C
T J=25°C
200
25
3.5
Er
20
Eon
5
0
0
5
6
7
8
9
10
0
11
200
400
600
800
1000 1200
IC (A)
V GE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
1400
V CE = 300V
V GE =15V
I C = 600A
T J = 150°C
Eoff
1200
Eon
1000
IC (A)
E (mJ)
3
Eoff
10
T J=150°C
30
2.5
15
400
40
1.5
2
V CE (V)
VCE = 300V
VGE = 15V
RG = 1Ω
T J = 150°C
35
1000
600
1
Energy losses vs Collector Current
Transfert Characteristics
1200
0.5
20
10
800
600
400
Er
V GE=15V
T J=150°C
RG=1Ω
200
Eon
0
0
0
1
2
3
4
5
Gate Resistance (ohms)
6
0
100 200 300 400
VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.05
0.7
0.04
0.5
0.03
IGBT
June, 2006
0.06
0.3
0.02
0.01
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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4-5
APTGT600DU60G – Rev 1
Thermal Impedance (°C/W)
0.07
APTGT600DU60G
Forward Characteristic of diode
1200
100
VCE=300V
D=50%
RG=1Ω
TJ =150°C
ZVS
80
ZCS
1000
800
Tc=85°C
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
120
60
600
T J=125°C
400
40
Hard
switching
20
TJ=150°C
T J=25°C
200
0
0
0
200
400
600
IC (A)
800
0
1000
0.4
0.8
1.2
V F (V)
1.6
2
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.08
Diode
0.9
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT600DU60G – Rev 1
June, 2006
Rectangular Pulse Duration in Seconds