BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • • • • Silicon epitaxial planar diodes For general purpose AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 20145 Mechanical Data Case: SOD-323 Weight: approx. 4 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box Parts Table Part Type differentiation Ordering code Type Marking Remarks BAV19WS-V-G VR = 100 V BAV19WS-V-G-18 or BAV19WS-V-G-08 AS Tape and reel BAV20WS-V-G VR = 150 V BAV20WS-V-G-18 or BAV20WS-V-G-08 AT Tape and reel BAV21WS-V-G VR = 200 V BAV21WS-V-G-18 or BAV21WS-V-G-08 AU Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Continuous reverse voltage Repetitive peak reverse voltage Part Symbol Value Unit BAV19WS-V-G VR 100 V BAV20WS-V-G VR 150 V BAV21WS-V-G VR 200 V BAV19WS-V-G VRRM 120 V BAV20WS-V-G VRRM 200 V BAV21WS-V-G VRRM 250 V 1) mA IF(AV) 200 1) mA mA IF Forward continuous current Rectified current (average) half wave rectification with resist. load 250 Repetitive peak forward current f 50 Hz, = 180° IFRM 625 1) Surge forward current t < 1 s, Tj = 25 °C IFSM 1 Ptot Power dissipation 200 A 1) mW Note 1) Valid provided that leads are kept at ambient temperature ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number 83423 Rev. 1.0, 14-Mar-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Junction temperature Symbol Value Unit RthJA 650 1) K/W Tj 150 1) Tstg Storage temperature range - 65 to + 150 °C 1) °C Note 1) Valid provided that leads are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward voltage Min. Typ. Max. Unit 1 V IF = 200 mA VF 1.25 V BAV19WS-V-G IR 100 nA VR = 100 V, Tj = 100 °C BAV19WS-V-G IR 15 µA VR = 150 V BAV20WS-V-G IR 100 nA VR = 150 V, Tj = 100 °C BAV20WS-V-G IR 15 µA VR = 200 V BAV21WS-V-G IR 100 nA VR = 200 V, Tj = 100 °C BAV21WS-V-G IR 15 µA IF = 10 mA rf 5 VR = 0, f = 1 MHz CD 1.5 pF IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 trr Dynamic forward resistance Diode capacitance Reverse recovery time Symbol VF VR = 100 V Leakage current Part IF = 100 mA 50 ns Typical Characteristics I F - Forward Current (mA) 1000 Tj = 100 °C 100 10 25 °C 1 0.1 0.01 0 18858 0.2 0.4 0.6 0.8 1 VF - Forward Voltage (V) Figure 1. Forward Current vs. Forward Voltage www.vishay.com 2 I O , I F - Admissible Forward Current (A) Tamb = 25 °C, unless otherwise specified 0.3 0.2 DC current IF Current (rectif.) I O 0.1 0 0 18859 30 60 90 120 150 Tamb - Ambient Temperature (°C) Figure 2. Admissible Forward Current vs. Ambient Temperature For technical questions within your region, please contact one of the following: Document Number 83423 [email protected], [email protected], [email protected] Rev. 1.0, 14-Mar-11 BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G 250 CD - Diode Capacitance (pF) Ptot - Admissible Power Dissipation (W) Vishay Semiconductors 200 150 100 50 0 0 18863 rf - Dynamic Forward Resistance (Ω) Figure 3. Admissible Power Dissipation vs. Ambient Temperature T j = 25 ° C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature (°C) 18864 2.0 1.8 1 10 100 VR - Reverse Voltage (V) Figure 6. Capacitance vs. Reverse Voltage 100 10 1 1 10 100 IF - Forward Current (mA) 18861 Figure 4. Dynamic Forward Resistance vs. Forward Current IR(Tj)/IR (25 °C) - Leakage Current 1000 100 10 Reverse Voltage BAV19WS-V-G VR = 100 V BAV20WS-V-G VR = 150 V 1 BAV21WS-V-G VR = 200 V 0.1 0 18862-2 40 80 120 160 200 Tj - Junction Temperature (°C) Figure 5. Leakage Current vs. Junction Temperature Document Number 83423 Rev. 1.0, 14-Mar-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G Vishay Semiconductors 0.1 (0.004) max. 0° to 8 ° 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) Package Dimensions in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.40 (0.016) 0.20 (0.008) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 www.vishay.com 4 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) For technical questions within your region, please contact one of the following: Document Number 83423 [email protected], [email protected], [email protected] Rev. 1.0, 14-Mar-11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000