DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 (DO-35) package The BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 90 V • Repetitive peak reverse voltage: max. 90 V • Repetitive peak forward current: max. 800 mA handbook, halfpage k a • Repetitive peak reverse current: max. 600 mA MAM246 • Capable of absorbing transients repetitively. Marking code: BAX12. APPLICATIONS Fig.1 Simplified outline (SOD27; DO35) and symbol. • Switching of inductive loads in semi-electronic telephone exchanges. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. 90 UNIT VRRM repetitive peak reverse voltage note 1 − VR continuous reverse voltage note 1 − 90 IF continuous forward current see Fig.2; note 2 − 400 mA IFRM repetitive peak forward current − 800 mA IFSM non-repetitive peak forward current t = 1 µs − 55 A t = 100 µs − 15 A V V square wave; Tj = 25 °C prior to surge; see Fig.4 t = 10 ms Tamb = 25 °C; note 2 − 9 − 450 mW − 600 mA A Ptot total power dissipation IRRM repetitive peak reverse current ERRM repetitive peak reverse energy Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C − 5.0 Notes 1. It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the IRRM rating. 2. Device mounted on an FR4 printed circuit-board; lead length 10 mm. 1996 Sep 17 2 mJ Philips Semiconductors Product specification Controlled avalanche diode BAX12 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS MIN. MAX. UNIT see Fig.3 IF = 10 mA − 750 mV IF = 50 mA − 840 mV IF = 100 mA − 900 mV IF = 200 mA − 1.0 V IF = 400 mA − 1.25 V see Fig.5 VR = 90 V − 100 nA VR = 90 V; Tj = 150 °C − 100 µA 120 170 V V(BR)R reverse avalanche breakdown voltage IR = 1 mA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 35 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.10 − 50 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1996 Sep 17 3 Philips Semiconductors Product specification Controlled avalanche diode BAX12 GRAPHICAL DATA MBG455 500 IF (mA) MBG463 600 handbook, halfpage handbook, halfpage IF (mA) 400 (1) (2) (3) 400 300 200 200 100 0 0 0 100 Tamb (oC) 200 0 2 VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 1 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG702 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 17 4 104 Philips Semiconductors Product specification Controlled avalanche diode BAX12 MBG696 107 handbook, full pagewidth IR (nA) 106 105 104 103 102 10 0 100 200 Tj (oC) VR = 90 V. Solid line; maximum values. Dotted line; typical values. Fig.5 Reverse current as a function of junction temperature. handbook, half age MGD003 MBG701 103 40 handbook, halfpage Cd (pF) PRRM (W) 30 102 (1) 20 10 10 0 0 10 20 VR (V) 1 10−2 30 10−1 1 t (ms) 10 Solid line; rectangular waveform; δ ≤ 0.01. Dotted line; triangular waveform; δ ≤ 0.02. (1) Limited by IRMM = 600 mA. f = 1 MHz; Tj = 25 °C. Fig.6 Fig.7 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 17 5 Maximum permissible repetitive peak reverse power as a function of the pulse duration T ≥ 50 ms; Tj = 25 °C. Philips Semiconductors Product specification Controlled avalanche diode BAX12 MBG699 handbook, halfpage VR MBG698 600 handbook, halfpage IR (mA) time 400 (1) (2) (3) (4) IR 200 0 100 t (rectangular waveform) t t (triangular δ= T waveform) 150 VR (V) 200 T Reverse voltages higher than the VR ratings are allowed, provided: a. The transient energy ≤ 7.5 mJ at PRRM ≤30 W; Tj = 25 °C; the transient energy ≤ 5 mJ at PRRM = 120 W; Tj = 25 °C (see Fig.7). b. T ≥ 50 ms; δ ≤0.01 (rectangular waveform) (see Fig.9). δ ≤0.02 (triangular waveform) (see Fig.9). With increasing temperature, the maximum permissible transient energy must be decreased by 0.03 mJ/K. (1) Tj = 25 °C; minimum values. (2) Tj = 175 °C; minimum values. (3) Tj = 25 °C; maximum values. (4) Tj = 175 °C; maximum values. Fig.8 Reverse current as a function of continuous reverse voltage. 1996 Sep 17 Fig.9 6 Peak reverse voltage and current test pulses. time Philips Semiconductors Product specification Controlled avalanche diode BAX12 handbook, full pagewidth tr tp t D.U.T. RS = 50 Ω V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal Input signal: reverse pulse rise time tr = 0.6 ns; reverse pulse duration tp = 100 ns; duty factor δ = 0.05. Oscilloscope: rise time tr = 0.35 ns. Circuit capacitance: C ≤ 1 pF (oscilloscope input capacitance + parasitic capacitance). (1) IR = 3 mA. Fig.10 Reverse recovery voltage test circuit and waveforms. 1996 Sep 17 t rr 7 output signal Philips Semiconductors Product specification Controlled avalanche diode BAX12 PACKAGE OUTLINE andbook, full pagewidth 0.56 max 1.85 max 4.25 max 25.4 min 25.4 min MLA428 - 1 Dimensions in mm. Fig.11 SOD27 (DO-35). DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 17 8