INFINEON BBY57-02W

BBY57...
Silicon Tuning Diode
Excellent linearity
High Q hyperabrupt tuning diode
Low series resistance
High capacitance ratio
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For control elements such as TCXOs and VCXOs
BBY57-02L
BBY57-02V
BBY57-02W
BBY57-05W
3
1
2
D 2
D 1
1
Type
BBY57-02L*
BBY57-02V
BBY57-02W
BBY57-05W
2
Package
TSLP-2
SC79
SCD80
SOT323
Configuration
single
single
single
common cathode
LS(nH)
0.4
0.6
0.6
1.4
Marking
55
5
55
D5s
* Preliminary
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
10
V
Forward current
IF
20
mA
Operating temperature range
Top
-55 ... 125
°C
Storage temperature
Tstg
-55 ... 150
1
Value
Unit
Mar-19-2003
BBY57...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ.
Unit
max.
DC Characteristics
Reverse current
IR
nA
VR = 8 V
-
-
10
VR = 8 V, TA = 85 °C
-
-
100
AC Characteristics
Diode capacitance
pF
CT
16.5
17.5
18.6
VR = 2.5 V, f = 1 MHz
-
9.35
-
VR = 3 V, f = 1 MHz
-
7
-
VR = 4 V, f = 1 MHz
3.5
4.7
5.5
CT1 /CT3
-
2.45
-
CT1 /CT4
3
3.7
4.5
VR = 1 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance
rS
VR = 1 V, f = 470 MHz, BBY57-02L
-
0.35
-
VR = 1 V, f = 470 MHz, all others
-
0.3
-
2
Mar-19-2003
BBY57...
Diode capacitance CT = (VR )
Normalized diode capacitance
C(TA) /C(25°C)= (TA ); f = 1MHz
f = 1MHz
40
1.06
-
pF
1.04
CTA/C 25
CT
30
25
1V
1.03
4V
1.02
1.01
20
1
15
0.99
0.98
10
0.97
5
0.96
0
0
0.5
1
1.5
2
2.5
3
V
0.95
-30
4
VR
-10
10
30
50
70
°C
100
TA
Temperature coefficient of the diode
capacitance TCc = (VR)
10
-2
TC C
1/°C
10
-3
10
-4
0
0.5
1
1.5
2
2.5
3
V
4
VR
3
Mar-19-2003