PD - 9.1382A
IRFP054N
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.012Ω
G
ID = 81A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
81
57
290
170
1.1
± 20
360
43
17
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.24
–––
0.90
–––
40
°C/W
8/25/97
IRFP054N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Q gs
Qgd
t d(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.06
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
66
40
46
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
5.0
LS
Internal Source Inductance
–––
13
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2900
880
330
V(BR)DSS
∆V(BR)DSS/∆T J
I GSS
Max. Units
Conditions
–––
V
V GS = 0V, I D = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.012
Ω
VGS = 10V, I D = 43A
4.0
V
VDS = VGS , ID = 250µA
–––
S
V DS = 25V, I D = 43A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
130
I D = 43A
23
nC VDS = 44V
53
VGS = 10V, See Fig. 6 and 13
–––
VDD = 28V
–––
I D = 43A
ns
–––
R G = 3.6Ω
–––
RD = 0.62Ω, See Fig. 10
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
V SD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
81
–––
–––
290
–––
–––
–––
–––
81
240
1.3
120
370
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 43A, VGS = 0V
TJ = 25°C, IF = 43A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 390µH
Uses IRF1010N data and test conditions
RG = 25Ω, IAS = 43A. (See Figure 12)
ISD ≤ 43A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS ,
TJ ≤ 175°C
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
IRFP054N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
I , D ra in -to -S o u rce C u rre n t (A )
D
I , D ra in -to -S o u rce C u rre n t (A )
D
TOP
100
4 .5V
20µ s PU L SE W ID TH
TC = 2 5°C
10
0.1
1
10
100
4 .5V
20 µs P UL SE W IDTH
TC = 17 5°C
10
A
0.1
100
Fig 1. Typical Output Characteristics
R D S (o n) , D ra in -to -S o u rc e O n R e s ista n ce
(N o rm a lize d )
I D , D r ain- to-S ourc e C urre nt (A )
3.0
TJ = 2 5 ° C
TJ = 1 7 5 ° C
10
V DS = 2 5 V
2 0 µ s P U L SE W ID TH
4
5
6
7
8
9
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
A
100
Fig 2. Typical Output Characteristics
1000
1
10
V D S , Drain-to-Source V oltage (V)
V D S , Drain-to-Source Voltage (V )
100
1
10
A
I D = 72 A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFP054N
4000
V GS
C is s
C rs s
C is s C o ss
3000
C os s
20
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH O RTE D
= C gd
= C ds + C g d
V G S , G a te -to -S o u rc e V o lta g e (V )
C , C a p a cita n ce (p F )
5000
2000
C rs s
1000
0
A
1
10
I D = 4 3A
V D S = 4 4V
V D S = 2 8V
16
12
8
4
FO R TE ST C IR C U IT
SEE FIG U R E 13
0
100
0
V D S , Drain-to-Source V oltage (V)
20
40
60
80
100
120
A
140
Q G , T otal G ate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
O PER ATION IN TH IS AR EA L IMITED
BY R DS (on)
100
I D , D ra in C u rre n t (A )
I S D , R everse Drain C urrent (A )
1000
T J = 17 5 °C
T J = 2 5°C
10µ s
100
100 µs
1 ms
10
10m s
VGS = 0 V
10
0.4
0.8
1.2
1.6
2.0
2.4
V S D , Source-to-D rain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.8
T C = 2 5°C
T J = 1 75 °C
Sing le P ulse
1
1
A
10
100
VD S , D rain-to-S ource V oltage (V)
Fig 8. Maximum Safe Operating Area
IRFP054N
100
VGS
LIMITED BY PACKAGE
D.U.T.
RG
80
I D , Drain Current (A)
RD
VDS
+
- VDD
10V
60
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
VDS
20
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRFP054N
L
VDS
D .U .T
RG
IA S
20V
D R IV E R
+
V
- DD
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (BR )D SS
tp
A
E A S , S in g le P u ls e A v a la n ch e E n e rg y (m J)
1000
15 V
TO P
BO TTO M
800
ID
18 A
3 1A
43A
600
400
200
0
V DD = 25 V
25
50
A
75
100
125
150
175
St arting TJ , Junct ion T em perature (°C )
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
QG
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRFP054N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRFP054N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
-D -
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
1 5 .90 (.6 2 6)
1 5 .30 (.6 0 2)
-B -
0 .25 (.0 1 0) M
D B M
-A 5 .5 0 (.2 1 7 )
2 0 .3 0 (.80 0 )
1 9 .7 0 (.77 5 )
2X
1
2
5 .3 0 (.2 0 9 )
4 .7 0 (.1 8 5 )
2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
4
NOT ES :
5. 50 (.2 17 )
4. 50 (.1 77 )
1 DIME NSIO NING & TO LERAN CING
PE R AN SI Y 14.5M, 1982.
2 CO NTRO LLING DIMENS IO N : IN CH .
3 CO NF ORM S T O JEDE C O UTLINE
T O-247-A C.
3
-C -
1 4.8 0 (.5 8 3 )
1 4.2 0 (.5 5 9 )
2 .4 0 (.09 4 )
2 .0 0 (.07 9 )
2X
5 .45 (.2 1 5)
2X
4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )
0 .8 0 (. 03 1 )
3 X 0 .4 0 (. 01 6 )
1 .4 0 (.0 56 )
3 X 1 .0 0 (.0 39 )
0 .25 (.0 10 ) M
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
C A S
2.6 0 (.10 2 )
2.2 0 (.08 7 )
LEAD AS SIGN MENT S
1
2
3
4
-
G ATE
DRAIN
SO URCE
DRAIN
Part Marking Information
TO-247AC
E X AM PL E : T H IS I S A N IR F1 010
E XAM P LE
: H
T HA
ISS S
ISE MB
A N LY
IR FP E3 0
W IT
IT HD EAS9SE
MB L Y
L OT WCO
B1M
L O T C O D E 3 A1 Q
A
I NT E RN A TIO N AL
IN TER N AT IO N AL
R E C TIF IE R
R EC T IF IER
LOG O
LOGO
IRIRF
F PE10
3 010
9246
3 A19B
Q 9 3 01 2M
A SSBELMB
A S SEM
Y LY
L O TLOT
C O DCEOD E
A
P AR
NU
M BE R
P AR
T NTU M
B ER
D A TE C OD E
D A(Y
TEYWC W
O D) E
(Y YW W )
Y Y = YE A R
YY = YE A R
W W = W EE K
W W W EE K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97