IRF IRF4905

PD - 9.1280C
IRF4905
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
l
D
l
VDSS = -55V
RDS(on) = 0.02Ω
G
ID = -74A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
-74
-52
-260
200
1.3
± 20
930
-38
20
-5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
0.75
–––
62
°C/W
8/25/97
IRF4905
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-55
–––
–––
-2.0
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.05
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
99
61
96
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3400
1400
640
V(BR)DSS
∆V(BR)DSS/∆TJ
I GSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, I D = -1mA
0.02
Ω
VGS = -10V, ID = -38A „
-4.0
V
VDS = VGS , ID = -250µA
–––
S
VDS = -25V, I D = -38A
-25
VDS = -55V, VGS = 0V
µA
-250
VDS = -44V, VGS = 0V, T J = 150°C
100
V GS = 20V
nA
-100
VGS = -20V
180
ID = -38A
32
nC VDS = -44V
86
V GS = -10V, See Fig. 6 and 13 „
–––
VDD = -28V
–––
I D = -38A
ns
–––
RG = 2.5Ω
–––
RD = 0.72Ω, See Fig. 10 „
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
t on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -74
showing the
A
G
integral reverse
––– ––– -260
p-n junction diode.
S
––– ––– -1.6
V
TJ = 25°C, IS = -38A, V GS = 0V „
––– 89 130
ns
TJ = 25°C, IF = -38A
––– 230 350
µC di/dt = -100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.3mH
RG = 25Ω, IAS = -38A. (See Figure 12)
ƒ ISD ≤ -38A, di/dt ≤ -270A/µs, VDD ≤ V(BR)DSS ,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRF4905
1000
1000
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
TOP
-ID , D ra in -to -S o u rc e C u rre n t (A )
-ID , D ra in -to -S o u rce C u rre n t (A )
TOP
100
10
-4.5 V
2 0µ s PU LS E W ID TH
T c = 2 5°C
A
1
0.1
1
10
100
-4.5 V
10
20 µ s PU LSE W ID TH
TC = 1 75°C
1
100
0.1
-VD S , Drain-to-Source Voltage (V)
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
-I D , D rain -to- S our ce C urr ent ( A )
2.0
TJ = 2 5 °C
100
TJ = 1 7 5 °C
10
V DS = -2 5 V
2 0 µ s P U L S E W ID T H
5
6
7
8
9
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
A
100
Fig 2. Typical Output Characteristics
1000
4
10
-VD S , Drain-to-Source V oltage (V )
Fig 1. Typical Output Characteristics
1
1
10
A
I D = -6 4A
1.5
1.0
0.5
VG S = -10 V
0.0
-60
-40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF4905
V GS
C is s
C rs s
C o ss
C , C a p a c ita n c e (p F )
6000
20
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH O RTE D
= C gd
= C ds + C g d
-V G S , G a te -to -S o u rce V o lta g e (V )
7000
5000
C is s
4000
C o ss
3000
2000
C rs s
1000
0
10
VDS = - 44V
VDS = - 28V
16
12
8
4
FOR TE ST C IR C U IT
SE E FIG U R E 1 3
0
A
1
I D = -3 8A
0
100
-VD S , Drain-to-Source V oltage (V)
80
120
160
A
200
Q G , Total G ate C harge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
-I D , D ra in C u rre n t (A )
-IS D , R e ve rse D ra in C u rre n t (A )
40
100
T J = 17 5°C
T J = 25 °C
10
VG S = 0 V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-VS D , S ource-to-Drain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.8
100
100µ s
1m s
10
10m s
T C = 2 5°C
T J = 1 75°C
Sin gle Pu lse
1
1
A
10
-VD S , Drain-to-Source V oltage (V )
Fig 8. Maximum Safe Operating Area
100
IRF4905
80
RD
VDS
I D , Drain Current (A)
VGS
60
D.U.T.
RG
+
VDD
-10V
40
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
20
td(on)
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
TC , Case Temperature
150
175
( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
(Z thJC )
1
D = 0.50
Thermal Response
0.20
0.1
0.10
PDM
0.05
t1
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRF4905
D .U .T
RG
IA S
- 20V
tp
VD D
A
D R IV E R
0 .0 1 Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
2500
L
VDS
TO P
BOT TO M
2000
1500
1000
500
0
A
25
I AS
ID
-1 6A
- 27A
-38 A
50
75
100
125
150
175
Starting TJ , Junction T emperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.3µF
-10V
QGS
.2µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRF4905
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

• dv/dt controlled by RG
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[ VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
[ ISD]
IRF4905
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 0 . 5 4 (. 4 1 5 )
1 0 . 2 9 (. 4 0 5 )
-B -
3 . 7 8 (. 1 4 9 )
3 . 5 4 (. 1 3 9 )
4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A -
1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
4
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 )
M IN
1
2
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
3X
1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )
L E A D A S S IG N M E N T S
1 - G A TE
2 - D R AIN
3 - SO URCE
4 - D R AIN
3
4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )
0 . 9 3 ( .0 3 7 )
3 X 0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 )
3X
M
B A
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L I N G D IM E N S IO N : I N C H
M
0 . 5 5 (. 0 2 2 )
0 . 4 6 (. 0 1 8 )
2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB
E XPLE
AM PLE
N 1010
IRF 1010
E X AM
: T:HI TSHIISS AISN AIRF
S ELY
MB LY
W ITWH ITAHS SAESMB
T DE
CO DE
9B 1M
LO TLOCO
9B 1M
A
INRTE
T ION
IN TE
NARTNA
ION
AL AL
T IF IER
R ECRTEC
IF IER
F 1010
IR F IR
1010
LO GO
LO GO
9246
9246
9B 9B1M 1M
S SBEM
A S SAEM
LYB LY
LO
T
CO DE
LO T CO DE
A
P A RT
NU
P A RT
NU M
BEMRBE R
D A TE
D A TE
C ODCEOD E
(Y
YW
(Y YW W ) W )
= AYE
Y Y Y=Y YE
R AR
W WW =W W= EW
EKE EK
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Data and specifications subject to change without notice.
8/97