PD - 91375B
IRL2910
HEXFET® Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
l
D
l
VDSS = 100V
RDS(on) = 0.026Ω
G
ID = 55A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
55
39
190
200
1.3
± 16
520
29
20
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
0.75
–––
62
°C/W
°C/W
°C/W
5/13/98
IRL2910
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min.
100
–––
–––
–––
–––
1.0
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
100
49
55
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.026
VGS = 10V, ID = 29A
0.030
Ω
VGS = 5.0V, ID = 29A
0.040
VGS = 4.0V, ID = 24A
2.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 29A
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 16V
nA
-100
VGS = -16V
140
ID = 29A
20
nC
VDS = 80V
81
VGS = 5.0V, See Fig. 6 and 13
–––
VDD = 50V
–––
ID = 29A
ns
–––
RG = 1.4Ω, VGS = 5.0V
–––
RD = 1.7Ω, See Fig. 10
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH from package
G
––– 7.5 –––
and center of die contact
––– 3700 –––
VGS = 0V
––– 630 –––
pF
VDS = 25V
––– 330 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– –––
55
showing the
A
G
integral reverse
––– ––– 190
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 29A, VGS = 0V
––– 240 350
ns
TJ = 25°C, IF = 29A
––– 1.8 2.7
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 1.2mH
RG = 25Ω, IAS = 29A. (See Figure 12)
ISD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRL2910
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
2.5 V
2 0µ s P U LS E W ID TH
T J = 2 5°C
1
0.1
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , Drain-to-Source Current (A )
ID , Drain-to-Source Current (A )
TOP
1
10
100
10
2.5 V
2 0µ s P U LS E W ID TH
T J = 1 75 °C
1
A
100
0.1
1
V D S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
3.0
R D S (on) , Drain-to-S ource O n Resistance
(N orm alized)
I D , D ra in -to-S ourc e C urrent (A)
1000
TJ = 2 5 °C
TJ = 1 7 5 °C
10
V DS = 50V
2 0 µ s P U L S E W ID T H
1
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
A
100
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
100
10
6.0
V G S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
A
I D = 4 8A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL2910
V GS
C iss
C rs s
C iss C o ss
C , Capacitance (pF)
5000
=
=
=
=
15
0V ,
f = 1MHz
C g s + C g d , C d s S H O R TE D
C gd
C ds + C g d
V G S , G ate-to-S ource V oltage (V )
6000
4000
3000
C o ss
2000
C rss
1000
0
A
1
10
I D = 29 A
V D S = 8 0V
V D S = 5 0V
V D S = 2 0V
12
9
6
3
FO R TE S T C IRC UIT
S E E FIG U R E 1 3
0
100
0
V D S , D rain-to-S ourc e V oltage (V )
80
120
160
A
200
Q G , T otal G ate C harge (nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
I D , Drain C urrent (A )
I S D , R everse Drain C urrent (A )
40
100
T J = 1 75 °C
T J = 25 °C
10µ s
100
100µ s
10
1m s
10m s
V G S = 0V
10
0.4
0.8
1.2
1.6
V S D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.0
T C = 25 °C
T J = 17 5°C
S ing le P u lse
1
1
10
100
A
1000
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
IRL2910
60
RD
VDS
VGS
I D , Drain Current (A)
50
D.U.T.
RG
+
-VDD
40
5.0V
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.01
0.00001
0.10
PDM
0.05
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRL2910
1 5V
L
VDS
D R IV E R
D .U .T
RG
+
V
- DD
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
E A S , S ingle P ulse A valanche E nergy (m J)
1400
TO P
1200
B O TTO M
ID
12 A
2 0A
29 A
1000
800
600
400
200
0
V D D = 25 V
25
50
A
75
100
125
150
175
S tarting T J , J unc tion T em perature (°C )
V (B R )D SS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
5.0 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRL2910
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
D=
Period
P.W.
+
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRL2910
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.113 )
2.62 (.103 )
10.54 (.415 )
10.29 (.405 )
3.78 (.149)
3.54 (.139)
-A-
-B4.69 (.1 85)
4.20 (.1 65)
1.3 2 (.052)
1.2 2 (.048)
6.47 (.255 )
6.10 (.240 )
4
15.24 (.600 )
14.84 (.584 )
1.15 (.0 45)
MIN
1
2
14 .09 (.55 5)
13 .47 (.53 0)
4 .06 (.16 0)
3 .55 (.14 0)
3X
3X
L EA D A S SIG N ME NT S
1 - G AT E
2 - D RA IN
3 - S OU R C E
4 - D RA IN
3
1 .40 (.05 5)
1 .15 (.04 5)
0.93 (.037 )
0.69 (.027 )
0.36 (.01 4)
3X
M
B A M
2 .54 (.10 0)
2X
N O TE S:
1 D IM EN S IO N ING & TOL ER A NC IN G P ER A N SI Y 14 .5 M, 19 82.
2 C O N TRO LLIN G D IME N S IO N : INC H
0.55 (.02 2)
0.46 (.01 8)
2 .9 2 (.11 5)
2 .6 4 (.10 4)
3 O U TLIN E C ON F OR MS TO JE DE C O UT LIN E TO -2 20A B .
4 HE A TS INK & LE AD M E AS U RE M E NTS D O N O T IN CL UD E B UR R S.
Part Marking Information
TO-220AB
E XEAXMAPML PE L:E TH
IS ISIS ISA NA NIR FIR1 F1
01010
: TH
W ITH
A SASSESMEBML BY L Y
W IT H
L OLTO C
T OCDOED E9 B 91M
B1M
A A
IN TE
R NRANTAIOTIO
N ANL A L
IN TE
R ERCETIFIE
R
C TIF IE R
IR FIR1 F0 10 1 0
L OLGOOG O
9 2 49 62 4 6
9B 9B 1 M1 M
A SASSESMEBML BY L Y
L OT
L O T C OCDOED E
P APRATR N
T UNMUBMEBRE R
D ADTE
A TEC OCDOED E
(Y Y(YWYW
W )W )
Y YY Y
= Y
= EYAERA R
WW
W W= W
= EWEEKE K
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http://www.irf.com/
Data and specifications subject to change without notice.
5/98