FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. • Applications • • • Load switch Power management DC/DC converter D 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V. • Low gate charge (3nC typical). • High performance trench technology for extremely low RDS(ON). • Compact industry standard SC70-6 surface mount package. S 1 6 2 5 3 4 D SC70-6 D D G Absolute Maximum Ratings Symbol TA = 25 C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS ID Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) ±8 1.9 6 V A PD Power Dissipation for Single Operation (Note 1a) 0.75 W (Note 1b) 0.48 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C 260 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) Package Marking and Ordering Information Device Marking .11 2000 Fairchild Semiconductor Corporation Device Reel Size Tape Width Quantity FDG311N 7 8mm 3000 units FDG311N Rev. D FDG311N February 2000 Symbol TA = 25 C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 1 µA IGSS Gate-Body Leakage Forward VGS = 8 V, VDS = 0 V 100 nA IGSS Gate-Body Leakage Reverse VGS = -8 V, VDS = 0 V -100 nA On Characteristics 20 V 14 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 µA, Referenced to 25°C ID(on) On-State Drain Current ID = 1.9 A ID = 1.9 A, TJ = 125°C VGS = 2.5 V, ID = 1.6 A VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 0.5 A 0.4 0.9 1.5 -3 0.082 0.115 0.110 0.170 VGS = 4.5 V, VGS = 4.5 V, 0.105 V mV/°C Ω 0.150 4 A 6 S 270 pF 55 pF 20 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 10 V, VGS = 0 V, f = 1.0 MHz (Note 2) VDD = 10 V, ID = 1 A, VGS = 5 V, RGEN = 6 Ω 5 12 ns 9 17 ns Turn-Off Delay Time 10 18 ns Turn-Off Fall Time 2 6 ns 3 4.5 nC VDS = 10 V, ID = 1.9 A, VGS = 4.5 V 0.6 nC 0.9 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.7 0.42 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 170°C/W when mounted on a 1 in2 pad of 2oz copper. b) 260°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDG311N Rev. D FDG311N Electrical Characteristics FDG311N Typical Characteristics 2 VGS = 4.5V RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 10 3.5V 3.0V 8 2.5V 6 2.0V 4 2 1.5V 0 1.8 VGS = 2.0V 1.6 1.4 2.5V 1.2 3.0V 3.5V 1 4.5V 0.8 0 0.5 1 1.5 2 2.5 3 0 2 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 8 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.32 1.6 ID = 1A ID = 1.9A VGS = 4.5V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 0.28 0.24 0.2 0.16 TA = 125oC 0.12 0.08 TA = 25oC 0.04 0 150 1 o 2 TJ, JUNCTION TEMPERATURE ( C) 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 o IS, REVERSE DRAIN CURRENT (A) TA = -55oC 25oC VDS = 5V ID, DRAIN CURRENT (A) 4.0V 125 C 8 6 4 2 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01 0.001 0.0001 0 0 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG311N Rev. D (continued) 500 5 ID = 1.9A f = 1MHz VGS = 0 V VDS = 5V 4 400 10V 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDG311N Typical Characteristics 3 2 CISS 300 200 100 1 COSS CRSS 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 4 Figure 7. Gate-Charge Characteristics. 12 16 20 Figure 8. Capacitance Characteristics. 10 30 RDS(ON) LIMIT SINGLE PULSE 1ms o RθJA= 260 C/W 24 10ms o TA= 25 C POWER (W) 100ms 1 1s 10s DC 0.1 VGS = 4.5V SINGLE PULSE o RθJA = 260 C/W 18 12 6 o TA = 25 C 0 0.01 0.1 1 10 100 0.0001 0.001 VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 8 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0.5 D = 0.5 R θJA (t) = r(t) * R θJA R JA =260 C/W 0.2 θ 0.1 0.05 0.1 P(pk) 0.05 0.01 t1 0.02 Single Pulse 0.01 0.005 0.0001 0.001 t2 TJ - TA = P * R θJA (t) 0.01 0.1 1 Duty Cycle, D = t 1 / t 2 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDG311N Rev. D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. www.fairchildsemi.com Rev. D