Si6933DQ Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V –20V). • –3.5 A, –30 V, Applications • Low gate charge (8nC typical) • Load switch • High performance trench technology for extremely low RDS(ON) RDS(ON) = 45 mΩ @ VGS = –10 V. RDS(ON) = 85 mΩ @ VGS = –4.5V. • Extended VGSS range (±20V) for battery applications • Battery protection • DC/DC conversion • Low profile TSSOP-8 package • Power management G2 S2 S2 D2 G1 S1 S1 D1 TSSOP-8 1 8 2 7 3 6 4 5 Pin 1 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±20 V ID Drain Current –3.5 A – Continuous (Note 1) – Pulsed PD –20 Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG 1.0 W 0.6 –55 to +150 °C (Note 1a) 100 °C/W (Note 1b) 125 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6933 Si6933DQ 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation Si6933DQ Rev. B (W) Si6933DQ September 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –22 mV/°C Off Characteristics ID = –250 µA BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –24 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = –20 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = 20 V, VDS = 0 V 100 nA ID = –250 µA On Characteristics –30 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C 4.6 28 42 38 ID(on) On–State Drain Current VGS = –10 V, ID = –3.5 A VGS = –4.5 V, ID = –2.5 A VGS = –10 V, ID = –3.5 A, TJ=125°C VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –3.5 A VDS = –15 V, f = 1.0 MHz V GS = 0 V, –1 –1.8 –3 V mV/°C 45 85 54 –15 mΩ A 12 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf 854 pF 215 pF 112 pF (Note 2) VDD = –15 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω 9 20 ns 14 20 ns Turn–Off Delay Time 29 60 ns Turn–Off Fall Time 15 20 ns 8 30 nC Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –15V, VGS = –10 V ID = –3.5 A, 2.4 nC 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.83 A (Note 2) –0.7 –0.83 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 100°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 125°C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Si6933DQ Rev. B (W) Si6933DQ Electrical Characteristics Si6933DQ Typical Characteristics 2.2 VGS = -10V -6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 -4.5V -ID, DRAIN CURRENT (A) 25 -4.0V 20 15 -3.5V 10 5 -3.0V 0 2 VGS = -4.0V 1.8 -4.5V 1.6 -5.0V 1.4 -6.0V -7.0V 1.2 -8.0V 1 0.8 0 1 2 3 4 5 0 5 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 25 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.12 ID = -4.1A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 ID = -2A 0.1 0.08 TA = 125oC 0.06 TA = 25oC 0.04 0.02 -50 -25 0 25 50 75 100 125 150 2 4 o 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 TA = -55oC VDS= - 5V 12 -IS, REVERSE DRAIN CURRENT (A) 16 -ID, DRAIN CURRENT (A) -10V 25oC 125oC 8 4 0 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01 0.001 0.0001 1.5 2 2.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Si6933DQ Rev. B (W) Si6933DQ Typical Characteristics 10 1200 -VGS, GATE-SOURCE VOLTAGE (V) ID = -4.1A VDS = -10V -15V f = 1 MHz VGS = 0 V 1000 8 CAPACITANCE (pF) CISS -20V 6 4 2 800 600 400 COSS 200 CRSS 0 0 0 4 8 12 0 16 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 25 30 P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT 100µs 1ms 10 10ms 100ms 1s 1 DC VGS = -10V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 100 -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 0.1 D = 0.5 RθJA(t) = r(t) * RθJA 0. RθJA = 125 C/W o 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. Si6933DQ Rev. B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4