FAIRCHILD SI692DQ

SI6926DQ
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
• 5.5 A, 20 V.
Applications
• Low gate charge
• Load switch
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 0.021 Ω @ VGS = 4.5 V
RDS(ON) = 0.035 Ω @ VGS = 2.5 V
• Extended VGSS range (±12V) for battery applications
• Motor drive
• DC/DC conversion
• Low profile TSSOP-8 package
• Power management
G2
S2
S2
D2
G1
S1
S1
D1
TSSOP-8
1
8
2
7
3
6
4
5
Pin 1
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
5.5
A
– Continuous
(Note 1a)
– Pulsed
PD
30
Power Dissipation
TJ, TSTG
(Note 1a)
1.0
(Note 1b)
0.6
W
-55 to +150
°C
(Note 1a)
125
°C/W
(Note 1b)
208
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
6926
SI6926DQ
13’’
12mm
3000 units
2001 Fairchild Semiconductor Corporation
SI6926DQ Rev A(W)
SI6926DQ
April 2001
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = 16 V,
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V
On Characteristics
20
ID = 250 µA,Referenced to 25°C
V
14
mV/°C
1
µA
VDS = 0 V
100
nA
VDS = 0 V
–100
nA
1.5
V
VGS = 0 V
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA,Referenced to 25°C
0.6
0.8
–3.2
ID = 5.5 A
VGS = 4.5 V,
ID = 4.2 A
VGS = 2.5 V,
VGS = 4.5 V, ID = 5.5A, TJ=125°C
mV/°C
17
21
24
35
23
34
30
mΩ
ID(on)
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 5.5 A
26
S
A
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
1082
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
277
pF
130
pF
(Note 2)
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 10 V,
VGS = 4.5 V
ID = 5.5 A,
8
20
ns
8
27
ns
24
38
ns
8
16
ns
12
17
nC
2
nC
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 0.83 A
(Note 2)
0.7
0.83
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 208 °C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
SI6926DQ Rev. A (W)
SI6926DQ
Electrical Characteristics
SI6926DQ
Typical Characteristics
2.5
30
ID, DRAIN CURRENT (A)
3.0V
3.5V
25
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V
2.5V
2.0V
20
15
10
5
2
VGS = 2.0V
1.5
2.5V
3.0V
3.5V
1
4.5V
0.5
0
0
0.5
1
1.5
2
2.5
0
3
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.07
1.6
ID = 5.5A
VGS = 4.5V
ID = 2.8 A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.0V
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
0.06
0.05
0.04
TA =
125oC
0.03
0.02
TA = 25oC
0.01
0
150
1
2
3
4
5
o
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
TA = -55oC
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
30
o
25 C
ID, DRAIN CURRENT (A)
25
125oC
20
15
10
5
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
SI6926DQ Rev. A (W)
SI6926DQ
Typical Characteristics
1800
ID = 5.5A
VDS = 5V
10V
f = 1MHz
VGS = 0 V
1500
4
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
15V
3
2
CISS
1200
900
600
COSS
1
300
CRSS
0
0
0
2
4
6
8
10
12
0
14
4
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
12
16
20
Figure 8. Capacitance Characteristics.
100
50
RDS(ON) LIMIT
1ms
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
8
VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms
10
100ms
1s
1
10s
DC
VGS = 4.5V
SINGLE PULSE
RθJA = 208oC/W
0.1
TA = 25oC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
Figure 9. Maximum Safe Operating Area.
SINGLE PULSE
RθJA = 208°C/W
TA = 25°C
40
30
20
10
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 208 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
SI6926DQ Rev. A (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET 
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1