Schottky Barrier Diodes (SBD) MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE 1.6 − 0.1 + 0.2 1 ■ Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 2 0.55 ± 0.1 For UHF mixer + 0.2 2.7 − 0.1 3.3 ± 0.2 *(3.8 ± 0.2) Parameter Symbol Rating Unit Reverse voltage (DC) VR 5 V Forward voltage VF 0.5 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C + 0.1 0 to 0.05 ■ Absolute Maximum Ratings Ta = 25°C 0.16 − 0.03 1.1 − 0.1 + 0.2 0.3 5° 5° *( ): WL type 1 : Anode 2 : Cathode Mini Type Package (2-pin) Marking Symbol: 5B ■ Electrical Characteristics Ta = 25°C Parameter Forward current (DC) Symbol Conditions IF VF = 0.5 V Reverse current (DC) IR VR = 5 V Forward voltage (DC) VF IF = 2 mA V(BR)R IR = 1 mA Reverse break down voltage (DC) Terminal capacitance Ct VR = 0.5 V, f = 1 MHz Conversion gain*1,2 GC Static breakdown strength Min Typ 35 Max Unit 100 mA 35 µA 0.25 V 5 V 0.65 0.85 1.05 pF RF = 890 MHz, LO = 935 MHz, IF = 45 MHz −7 −5 dB C = 100 pF, Breakdown judgment point IR ≥ 35 µA 100 200 V Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Noise figure is 8.5 dB. 3. Rated input/output frequency: 935 MHz 4. *1 : Judgement is to be made per each chip lot. Sampling of LTPD = 20% and n = 11 is guaranteed. *2 : Set min. GC = −7 dB. Out-spec products, if any, this specification would be reviewed 1 MA2X707 Schottky Barrier Diodes (SBD) IF V F 103 Ct VR IR V R 103 Ta = 25°C 10 Ta = 25°C f = 1 MHz Ta = 25°C 5 Reverse current IR (µA) 10 1 Terminal capacitance Ct (pF) Forward current IF (mA) 102 102 10 1 10−1 3 2 1 0.5 0.3 0.2 10−1 0 0.4 0.8 1.2 1.6 2.0 10−2 2.4 0 4 Forward voltage VF (V) 8 12 16 Reverse voltage VR (V) VB C 0 Ta = 25°C Conversion gain GC (dB) Static breakdown VB (V) −4 200 100 −8 −12 −16 −20 0 10 102 103 Capacitor capacitance C (pF) 2 104 −24 −20 −10 0 10 20 Local input power PLOC (dBm) 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) GC PLOC 300 0.1 30