DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8112TB
SILICON MMIC 1st FREQUENCY DOWN-CONVERTER
FOR CELLULAR/CORDLESS TELEPHONE
DESCRIPTION
The µPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for
cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The µPC8112TB features
high impedance output of open collector. Similar ICs of the µPC2757TB and µPC2758TB feature low impedance
output of emitter follower. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to
reduce your system size.
The µPC8112TB is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Excellent RF performance
•
•
•
•
•
•
: IIP3 = –7 dBm@fRFin = 1.9 GHz (reference)
IM3 = –88 dBc@PRFin = –38 dBm, 1.9 GHz (reference)
Similar conversion gain to µPC2757 and lower noise figure than µPC2758
Minimized carrier leakage
: RFIo = –80 dB@fRFin = 900 MHz (reference)
RFIo = –55 dB@fRFin = 1.9 GHz (reference)
High linearity
: PO (sat) = –2.5 dBm TYP.@fRFin = 900 MHz
PO (sat) = –3 dBm TYP.@fRFin = 1.9 GHz
Low current consumption
: ICC = 8.5 mA TYP.
Supply voltage
: VCC = 2.7 to 3.3 V
High-density surface mounting : 6-pin super minimold package
APPLICATIONS
• 1.5 GHz to 1.9 GHz cellular/cordless telephone (PHS, DECT, PDC1.5G and so on)
• 800 MHz to 900 MHz cellular telephone (PDC800M and so on)
ORDER INFORMATION
Part Number
µPC8112TB-E3
Remark
Package
Markings
6-pin super minimold
C2K
Supplying Form
Embossed tape 8 mm wide.
Pin 1, 2, 3 face the tape perforation side.
Qty 3kpcs/reel.
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC8112TB)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12808EJ2V0DS00 (2nd edition)
Date Published June 2000 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1997, 2000
µPC8112TB
PIN CONNECTIONS
3
2
1
Pin Name
1
RFinput
2
GND
3
LOinput
4
PS
5
VCC
6
IFoutput
(Bottom View)
C2K
(Top View)
Pin No.
4
4
3
5
5
2
6
6
1
PRODUCT LIN-UP (TA = +25°C, VCC = 3.0 V, ZS = ZL = 50 Ω)
Items
Part
Number
µPC2757T
No RF
ICC
(mA)
900 MHz 1.5 GHz 1.9 GHz 900 MHz
CG
SSB · NF SSB · NF SSB · NF
(dB)
(dB)
(dB)
(dB)
1.5 GHz
CG
(dB)
1.9 GHz
CG
(dB)
900 MHz
IIP3
(dBm)
1.5 GHz
IIP3
(dBm)
1.9 GHz
IIP3
(dBm)
5.6
10
10
13
15
15
13
−14
−14
−12
11
9
10
13
19
18
17
−13
−12
−11
8.5
9
11
11
15
13
13
−10
−9
−7
900 MHz
PO(sat)
(dBm)
1.5 GHz
PO(sat)
(dBm)
1.9 GHz
PO(sat)
(dBm)
900 MHz
RFLO
(dB)
1.5 GHz
RFLO
(dB)
1.9 GHz
RFLO
(dB)
IF Output
Configuration
−3
−
−8
–
–
–
Emitter follower
µPC2757TB
µPC2758T
µPC2758TB
µPC8112T
µPC8112TB
Items
Part
Number
µPC2757T
µPC2757TB
µPC2758T
6-pin minimold
6-pin super minimold
+1
−
−4
–
–
–
6-pin minimold
µPC2758TB
µPC8112T
Package
6-pin super minimold
−2.5
−3
−3
−80
−57
−55
Open collector
µPC8112TB
6-pin minimold
6-pin super minimold
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Caution 1. The µPC2757 and µPC2758’s IIP3 are calculated with ∆IM3 = 3 which is the same IM3 inclination as
µPC8112. On the other hand, OIP3 of Standard characterisitcs in page 6 is cross point IP.
2. This document is to be specified for µPC8112TB.
The other part number mentioned in this
document should be referred to the data sheet of each part number.
2
Data Sheet P12808EJ2V0DS00
µPC8112TB
INTERNAL BLOCK DIAGRAM
RFinput
IFoutput
LOinput
µPC8112TB LOCATION EXAMPLE IN THE SYSTEM
Digital cordless phone
Low noise Tr.
µPC8112TB
RX
DEMOD.
VCO
SW
÷N
I
Q
PLL
PLL
0˚
I
φ
TX
PA
90˚
Q
Data Sheet P12808EJ2V0DS00
3
µPC8112TB
PIN EXPLANATION
Pin
No.
Pin
Name
Applied
Voltage
(V)
Pin Voltage
(V)
1
RFinput
−
1.2
RF input pin of mixer. This
mixer is designed as double
balanced type.
This pin should be externally
coupled to front stage with DC cut
capacitor.
2
GND
0
−
Ground pin. This pin must be
connected to the system ground.
Form the ground pattern as wide
as possible and the truck length
as short as possible to minimize
ground impedance.
5
VCC
2.7 to 3.3
−
Function and Application
Internal Equivalent Circuit
5
6
From
LO
1
Supply voltage pin.
This pin should be connected with
bypass capacitor (example: 1 000
pf) to minimize ground
impedance.
6
IFoutput
as same as
VCC voltage
through
external
inductor
−
IF output pin. This output is
configured with open collector of
high impedance. This pin should
be externally equipped with
matching circuit of inductor should
be selected as small resistance
and high frequency use.
3
LOinput
−
1.4
Input pin of local amplifier. This
amplifier is designed as differential type.
This pin should be externally
coupled to local signal source
with DC cut capacitor.
Recommendable input level is
−15 to 0 dBm.
2
5
To mixer
3
2
4
PS
VCC or
GND
−
Power save control pin. This pin
can control ON/OFF operation
with bias as follows;
Bias: V
VPS
5
4
Operation
≥ 2.5
ON
0 to 0.5
OFF
2
4
Data Sheet P12808EJ2V0DS00
µPC8112TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C, 5 pin and 6 pin
3.6
V
Total Circuit Current
ICC
TA = +25°C
77.7
mA
Total Power Dissipation
PD
Mounted on double sided copper clad 50 × 50 ×
1.6 mm epoxy glass PWB (TA = +85°C)
200
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Remark
Supply Voltage
VCC
2.7
3.0
3.3
V
5 pin and 6 pin should be applied
to same voltage.
Operating Ambient Temperature
TA
−40
+25
+85
°C
LO Input Level
PLOin
−15
−10
0
dBm
RF Input Frequency
fRFin
0.8
1.9
2.0
GHz
IF Output Frequency
fIFout
100
250
300
MHz
Zs = 50 Ω
With external matching
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C, VCC = VPS = VIFout = 3.0 V,
PLOin = −10 dBm, ZS = ZL = 50 Ω)
Parameter
Circuit Current
Circuit Current at Power Save
Mode
Conversion Gain
Single Side Band Noise Figure
Saturated Output Power
Symbol
ICC
ICC(PS)
Test Conditions
No signals
VCC = 3.0 V, VPS = 0.5 V
MIN.
TYP.
MAX.
Unit
4.9
8.5
11.7
mA
−
−
0.1
µA
CG
fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
11.5
9.5
15
13
17.5
15.5
dB
SSB•NF
fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
−
−
9.0
11.2
11
13.2
dB
Po(sat)
fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
(PRFin = −10 dBm each)
−6.5
−7
−2.5
−3
−
−
dBm
Data Sheet P12808EJ2V0DS00
5
µPC8112TB
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°°C, VCC = VPS = VIFout = 3.0 V, PLOin = −10 dBm, ZS = ZL = 50 Ω)
Parameter
Symbol
Conversion Gain
Single Side Band Noise Figure
Test Conditions
Reference
Unit
CG
fRFin = 1.5 GHz, fLOin = 1.6 GHz
13
dB
SSB•NF
fRFin = 1.5 GHz, fLOin = 1.6 GHz
11
dB
LO Leakage at RF pin
LORF
fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
−45
−46
−45
dB
RF Leakage at LO pin
RFLO
fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
−80
−57
−55
dB
LO Leakage at IF pin
LOif
fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
−32
−33
−30
dB
Input 3rd Order Intercept
Note
Point
IIP3
fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
−10
−9
−7
dBm
Note IIP3 is determined by comparing two method; theoretical calculation and cross point of IM3 curve.
IIP3 = (∆IM3 × Pin + CG − IM3) ÷ (∆IM3 − 1) (dBm) [∆IM3: IM3 curve inclination in linear range]
µPC8112’s ∆IM3 is closer to 3 (theoretical inclination) than µPC2757 and µPC2758 of conventional ICs.
TEST CIRCUIT
(Top View)
POWER
SAVE
Signal Generator
50 Ω
1 000 pF
3
LOinput
PS
4
2
GND
VCC
5
C2
Signal Generator
50 Ω
C4, C5
3V
L1
1 000 pF
1
RFinput
IFoutput
C1
50 Ω
6
C6
Spectrum Analyzer
6
Data Sheet P12808EJ2V0DS00
µPC8112TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
C3
LO
input
PS bias
C2
PS
C4
GND
VCC
C5
L1
C6
RF
input
Short
Chip
C1
→
Voltage supply
IF
output
Short Chip = 1 000 pF
Component Number
IF 100 MHz Matching
IF 240 MHz Matching
Remarks
C1 to C5
1 000 pF
1 000 pF
CHIP C
C6
5 pF
2 pF
CHIP C
L1
330 nH
84 nH
CHIP L
EVALUATION BOARD CHARACTERS AND NOTE
(1) 35 µm thick double-sided copper clad 35 × 42 × 0.4 mm polyimide board
(2) Back side: GND pattern
(3) Solder plated patterns
(4)
{: Through holes
(5) To mount C6, pattern should be cut.
CAUTION
Test circuit or print pattern in this sheet is for testing IC characteristics. They are not an application
circuit or recommended system circuit.
In the case of actual system application, external circuits including print pattern and matching circuit
constant of output port should be designed in accordance with IC’s S-parameters and environmental
components.
Remark External circuits of the IC can be referred to following application notes.
• USAGE AND APPLICATION CHARACTERISTICS OF µPC2757, µPC2758, AND µPC8112, 3-V POWER
SUPPLY, 1.9-GHz FREQUENCY DOWN-CONVERTER ICS FOR MOBILE COMMUNICATION
(Document No. P11997E)
Data Sheet P12808EJ2V0DS00
7
µPC8112TB
TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified, measured on test circuits)
−
−Without Signals−
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
12
12
VCC = VPS = VIFout
10
Circuit Current ICC (mA)
Circuit Current ICC (mA)
10
VCC = VPS = VIFout
8
6
4
2
TA = +85°C
8
TA = +25°C
6
TA = –40°C
4
2
0
0
2
3
1
Supply Voltage VCC (V)
4
0
0
Circuit Current ICC (mA)
CIRCUIT CURRENT vs. PS PIN APPLIED VOLTAGE
12
VCC = VIFout
VCC = 3.3 V
10
8
VCC = 3.0 V
6
VCC = 2.7 V
4
2
0
8
0
2
3
1
PS Pin Applied Voltage VPS (V)
4
Data Sheet P12808EJ2V0DS00
2
3
1
Supply Voltage VCC (V)
4
µPC8112TB
S-PARAMETERS
−
−Calibrated on pin of DUT−
S11
Z
REF 1.0 Units
1
200.0 mUnits/
76.656 Ω –421.67 Ω
hp
S11
Z
REF 1.0 Units
1
200.0 mUnits/
62.711 Ω –224.07 Ω
hp
MARKER 1
500.0 MHz
MARKER 1
500.0 MHz
1
1
2
5
4
RF PORT
VCC = VPS = 3.0V
1:500 MHz 62.711 Ω-j224.07 Ω
2:900 MHz 48.977 Ω-j219.18 Ω
3:1 500 MHz 40.641 Ω-j129.94 Ω
4:1 900 MHz 37.422 Ω-j101.51 Ω
5:2 500 MHz 34.801 Ω-j74.141 Ω
2
3
5
RF PORT
VCC = 3.0V VPS = GND
1:500 MHz 76.656 Ω-j421.67 Ω
2:900 MHz 53.102 Ω-j234.55 Ω
3:1 500 MHz 44.844 Ω-j140.82 Ω
4:1 900 MHz 40.898 Ω-j109.73 Ω
5:2 500 MHz 38.063 Ω-j80.547 Ω
START 0.050000000 GHz
STOP 3.000000000 GHz
S11
Z
REF 1.0 Units
1
200.0 mUnits/
169.11 Ω –429.98 Ω
hp
4
3
START 0.050000000 GHz
STOP 3.000000000 GHz
S11
Z
REF 1.0 Units
1
200.0 mUnits/
135.53 Ω –575.06 Ω
hp
MARKER 1
500.0 MHz
MARKER 1
500.0 MHz
1
1
2
2
5
LO PORT
VCC = VPS = 3.0V
1:500 MHz 169.11 Ω-j429.98 Ω
2:900 MHz 91.875 Ω-j263.7 Ω
3:1 500 MHz 60.781 Ω-j162.56 Ω
4:1 900 MHz 56.789 Ω-j125.66 Ω
5:2 500 MHz 49.652 Ω-j97.602 Ω
4
3
5
LO PORT
VCC = 3.0V VPS = GND
1:500 MHz 135.53 Ω-j575.06 Ω
2:900 MHz 78.266 Ω-j337.66 Ω
3:1 500 MHz 55.883 Ω-j201.43 Ω
4:1 900 MHz 52.734 Ω-j159.63 Ω
5:2 500 MHz 44.262 Ω-j122.66 Ω
START 0.050000000 GHz
STOP 3.000000000 GHz
S22
Z
REF 1.0 Units
1
200.0 mUnits/
201.00 Ω –1.7173 kΩ
hp
3
START 0.050000000 GHz
STOP 3.000000000 GHz
S22
Z
REF 1.0 Units
1
200.0 mUnits/
056.56 Ω –1.7468 kΩ
hp
MARKER 1
100.0 MHz
IF PORT
VCC = VPS = 3.0V
1:100 MHz 201.88 Ω-j1.7173 kΩ
2:240 MHz 92.094 Ω-j715.72 Ω
4
MARKER 1
100.0 MHz
START 0.050000000 GHz
STOP 3.000000000 GHz
1
1
2
2
IF PORT
VCC = 3.0V VPS = GND
1:100 MHz 56.56 Ω-j1.7468 kΩ
2:240 MHz 85.5 Ω-j722.22 Ω
Data Sheet P12808EJ2V0DS00
START 0.050000000 GHz
STOP 3.000000000 GHz
9
µPC8112TB
S-PARAMETERS OF IF OUTPUT MATCHING (VCC = VPS = VIFout = 3.0 V)
(This S11 is monitored at IF connector on test circuit fixture)
IF 100 MHz MATCHING
S11 1
hp
U
FS
1:
50.277 Ω
−ON TEST CIRCUIT−
−
IF 240 MHz MATCHING
–22.559 Ω 70.552 pF
100.000 000 MHz
S11 1
hp
MARKER 1
100 MHz
U
FS 1 :
31.052 Ω
–84.961 mΩ 7.8053 nF
240.000 000 MHz
MARKER 1
240 MHz
1
1
START 50.000 000 MHz
S11
STOP 3 000.000 000 MHz
START 50.000 000 MHz
log MAG. 10 dB/ REF 0 dB
1 : –27.655 dB
hp
102.366 002 MHz
S11
MARKER 1
102.366002 MHz
STOP 3 000.000 000 MHz
log MAG. 10 dB/ REF 0 dB
1 : –13.556 dB
hp
241.770 000 MHz
MARKER 1
241.770000 MHz
1
1
START 90.000 000 MHz
STOP 110.000 000 MHz
START 230.000 000 MHz
STOP 250.000 000 MHz
The data in this page are to make clear the test condition of impedance matched to next stage, not specify the
recommended condition. The S11 smith charts of the test fixture setting IC are normalized to ZO = 50 Ω, because the
IC's load is the measurement equipment of 50 Ω impedance.
In your use, the output return loss value can be helpful information to adjust your circuit matching to next stage.
10
Data Sheet P12808EJ2V0DS00
µPC8112TB
IF 100 MHz MATCHING
–5
–10
–15
–20
fRFin = 900 MHz
fLOin = 1 000 MHz
fIFout = 100 MHz
PLOin = –10 dBm
VCC = VPS = VIFout = 3.0 V
–25
–30
–30
–20
–40
–10
RF Input Level PRFin (dBm)
IF Output Level PIFout (dBm)
–5
–35
–50
3rd Order Intermodulation Distortion IM3 (dBm)
IF Output Level of Each Tone PIFout (dBm)
IF OUTPUT LEVEL vs. RF INPUT LEVEL
0
3rd ORDER INTERMODULATION DISTORTION,
IF OUTPUT LEVEL vs. RF INPUT LEVEL
20
–10
Pout
–20
–30
–40
–50
–60
–70
–50
IM3
fRFin1 = 900 MHz
fRFin2 = 905 MHz
fLOin = 1 000 MHz
PLOin = –10 dBm
VCC = VPS = VIFout = 3.0 V
fIFout = 100 MHz
–30
–20
–40
–10
RF Input Level PRFin (dBm)
0
VCC = 3.0 V
VCC = 2.7 V
–15
–20
fRFin = 900 MHz
fLOin = 1 000 MHz
fIFout = 100 MHz
PLOin = –10 dBm
VCC = VPS = VIFout = 3.0 V
–25
–30
–30
–20
–40
–10
RF Input Level PRFin (dBm)
0
CONVERSION GAIN vs. LO INPUT LEVEL
20
10
0
VCC = 3.3 V
–10
–35
–50
0
Conversion Gain CG (dB)
IF Output Level PIFout (dBm)
IF OUTPUT LEVEL vs. RF INPUT LEVEL
0
15
10
5
0
fRFin = 900 MHz
PRFin = –40 dBm
fLOin = 1 000 MHz
fIFout = 100 MHz
VCC = VPS = VIFout = 3.0 V
–5
–10
–50
Data Sheet P12808EJ2V0DS00
–40
–30
–20
0
–10
LO Input Level PLOin (dBm)
10
11
µPC8112TB
IF 100 MHz MATCHING
CONVERSION GAIN vs. SUPPLY VOLTAGE
SSB NOISE FIGURE vs. LO INPUT LEVEL
20
15
10
5
0
fRFin = 900 MHz
fLOin = 1 000 MHz
fIFout = 100 MHz
VCC = VPS = VIFout = 3.0 V
2
3
3.5
2.5
Supply Voltage VCC (V)
4
SSB Noise Figure SSB•NF (dB)
Conversion Gain CG (dB)
20
18
16
14
12
10
8
6
–40
CONVERSION GAIN vs. IF OUTPUT FREQUENCY
20
Conversion Gain CG (dB)
15
10
5
0
–5
–10
fRFin = 900 MHz
PRFin = –40 dBm
PLOin = –10 dBm
VCC = VPS = VIFout = 3.0 V
–15
–20
–25
12
0
fRFin = 900 MHz
fLOin = 1 000 MHz
fIFout = 100 MHz
VCC = VPS = VIFout = 3.0 V
50 100 150 200 250 300 350 400 450 500
IF Output Frequency fIFout (MHz)
Data Sheet P12808EJ2V0DS00
–20
–10
–30
LO Input Level PLOin (dBm)
0
µPC8112TB
IF 100 MHz MATCHING
IF OUTPUT LEVEL vs. RF INPUT LEVEL
5
0
0
–5
–10
–15
fRFin = 1.5 GHz
fLOin = 1.6 GHz
PLOin = –10 dBm
fIFout = 100 MHz
VCC = VPS = VIFout = 3.0 V
–20
–25
–30
–50
–40
–30
–20
–10
0
RF Input Level PRFin (dBm)
IF Output Level PIFout (dBm)
IF Output Level PIFout (dBm)
IF OUTPUT LEVEL vs. RF INPUT LEVEL
5
VCC = 3.3 V
VCC = 2.7 V
–10
VCC = 3.0 V
–15
fRFin = 1.5 GHz
fLOin = 1.6 GHz
PLOin = –10 dBm
fIFout = 100 MHz
VCC = VPS = VIFout = 3.0 V
–20
–25
–30
–50
10
3rd ORDER INTERMODULATION DISTORTION,
IF OUTPUT LEVEL OF EACH TONE vs. RF OUTPUT LEVEL
10
–40
–30
–20
–10
0
RF Input Level PRFin (dBm)
10
CONVERSION GAIN vs. LO INPUT POWER
15
0
Pout
–10
–20
–30
–40
–50
–60
–70
–80
–90
–40
IM3
fRFin1 = 1.5 GHz
fRFin2 = 1.505 GHz
fLOin = 1.6 GHz
PLOin = –10 dBm
fIFout = 100 MHz
VCC = VPS = VIFout = 3.0 V
–30
–20
–10
RF Input Level PRFin (dBm)
0
Conversion Gain CG (dB)
3rd Order Intermodulation Distortion IM3 (dBm)
IF Output Level of Each Tone PIFout (dBm)
–5
10
5
0
–5
fRFin = 1.5 GHz
fLOin = 1.6 GHz
PRFin = –40 dBm
fIFout = 100 MHz
VCC = VPS = VIFout = 3.0 V
–10
–15
–50
Data Sheet P12808EJ2V0DS00
–40
–30
–20
0
–10
LO Input Level PLOin (dBm)
10
13
µPC8112TB
IF 100 MHz MATCHING
CONVERSION GAIN vs. SUPPLY VOLTAGE
SSB NOISE FIGURE vs. LO INPUT LEVEL
30
10
5
0
fRFin = 1.5 GHz
fLOin = 1.6 GHz
fIFout = 100 MHz
VCC = VPS = VIFout = 3.0 V
2
2.5
3
3.5
4
SSB Noise Figure SSB•NF (dB)
Conversion Gain CG (dB)
15
25
20
15
10
0
–40
Supply Voltage VCC (V)
14
fRFin = 1.5 GHz
fLOin = 1.6 GHz
fIFout = 100 MHz
VCC = VPS = VIFout = 3.0 V
5
–30
–20
–10
LO Input Level PLOin (dBm)
Data Sheet P12808EJ2V0DS00
0
µPC8112TB
IF 240 MHz MATCHING
IF OUTPUT LEVEL vs. RF INPUT LEVEL
IF OUTPUT LEVEL vs. RF INPUT LEVEL
0
–5
TA = +25°C
–10
TA = –40°C
–15
TA = +85°C
–20
–25
fRFin = 1.9 GHz
fLOin = 1.66 GHz
PLOin = –10 dBm
fIFout = 240 MHz
VCC = VPS = VIFout = 3.0 V
–30
–35
–40
–50
–30
–20
–40
–10
RF Input Level PRFin (dBm)
IF Output Level PIFout (dBm)
IF Output Level PIFout (dBm)
0
–30
–40
–50
–60
–70
–50
IM3
fRFin1 = 1.9 GHz
fRFin2 = 1.905 GHz
fLOin = 1.66 GHz
PLOin = –10 dBm
VCC = VPS = VIFout = 3.0 V
fIFout = 240 MHz
–30
–20
–40
–10
RF Input Level PRFin (dBm)
0
VCC = 3.0 V
–25
fRFin = 1.9 GHz
fLOin = 1.66 GHz
PLOin = –10 dBm
fIFout = 240 MHz
VCC = VPS = VIFout = 3.0 V
–30
–30
–20
–40
–10
RF Input Level PRFin (dBm)
0
CONVERSION GAIN vs. LO INPUT LEVEL
Conversion Gain CG (dB)
3rd Order Intermodulation Distortion IM3 (dBm)
IF Output Level of Each Tone PIFout (dBm)
–20
VCC = 2.7 V
–20
15
10
Pout
–15
–40
–50
3rd ORDER INTERMODULATION DISTORTION,
IF OUTPUT LEVEL OF EACH TONE vs. RF INPUT LEVEL
20
–10
VCC = 3.3 V
–10
–35
0
0
–5
10
5
0
–5
fRFin = 1.9 GHz
PRFin = –40 dBm
fLOin = 1.66 GHz
fIFout = 240 MHz
VCC = VPS = VIFout = 3.0 V
–10
–15
–50
Data Sheet P12808EJ2V0DS00
–40
–30
–20
0
–10
LO Input Level PLOin (dBm)
10
15
µPC8112TB
IF 240 MHz MATCHING
CONVERSION GAIN vs. SUPPLY VOLTAGE
SSB NOISE FIGURE vs. LO INPUT LEVEL
20
10
fRFin = 1.9 GHz
PRFin = –40 dBm
fLOin = 1.66 GHz
PLOin = –10 dBm
fIFout = 240 MHz
VCC = VPS = VIFout = 3.0 V
5
0
2
3
3.5
2.5
Supply Voltage VCC (V)
SSB Noise Figure SSB•NF (dB)
Conversion Gain CG (dB)
15
4
0
–5
–10
fRFin = 1.9 GHz
PRFin = –40 dBm
PLOin = –10 dBm
VCC = VPS = VIFout = 3.0 V
–15
–20
0
100
300
400
200
500
IF Output Frequency fIFout (MHz)
600
SSB Noise Figure SSB•NF (dB)
Conversion Gain CG (dB)
5
16
14
12
10
fRFin = 1.9 GHz
fLOin = 1.66 GHz
8
fIFout = 240 MHz
VCC = VPS = VIFout = 3.0 V
6
–20
–40
–10
–30
LO Input Level PLOin (dBm)
5
14
13
12
11
10
9
8
fRFin = 1.9 GHz
fLOin = 1.66 GHz
PLOin = –10 dBm
VCC = VPS = VIFout = 3.0 V
7
6
5
–40
100
0
60
20
80
–20
40
Operating Ambient Temperature TA (°C)
Remark The graphs indicate nominal characteristics.
16
0
SSB NOISE FIGURE vs. OPERATING AMBIENT TEMPERATURE
15
CONVERSION GAIN vs. IF OUTPUT FREQUENCY
15
10
18
Data Sheet P12808EJ2V0DS00
µPC8112TB
PACKAGE DIMENSIONS
6 pin super minimold (Unit: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
Data Sheet P12808EJ2V0DS00
0.15+0.1
–0
0 to 0.1
0.7
0.1 MIN.
0.9±0.1
2.0±0.2
1.25±0.1
17
µPC8112TB
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
Keep the track length of the ground pins as short as possible.
(3) The bypass capacitor (e.g. 1 000 pF) should be attached to the VCC pin.
(4) The matching circuit should be externally attached to the IF output pin.
(5) The DC cut capacitor must be each attached to the input and output pins.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition
Symbol
Infrared Reflow
Package peak temperature: 235°C or below
Time: 30 seconds or less (at 210°C)
Note
Count: 3, Exposure limit: None
IR35-00-3
VPS
Package peak temperature: 215°C or below
Time: 40 seconds or less (at 200°C)
Note
Count: 3, Exposure limit: None
VP15-00-3
Wave Soldering
Soldering bath temperature: 260°C or below
Time: 10 seconds or less
Note
Count: 1, Exposure limit: None
WS60-00-1
Partial Heating
Pin temperature: 300°C
Time: 3 seconds or less (per side of device)
Note
Exposure limit: None
–
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
18
Data Sheet P12808EJ2V0DS00
µPC8112TB
[MEMO]
Data Sheet P12808EJ2V0DS00
19
µPC8112TB
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
SENSITIVE
DEVICES
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
• The information in this document is current as of June, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4