SHARP LH53259

LH53259
FEATURES
• 32,768 words × 8 bit organization
• Access time: 150 ns (MAX.)
• Low-power consumption:
Operating: 137.5 mW (MAX.)
Standby: 550 µW (MAX.)
CMOS 256K (32K × 8) MROM
PIN CONNECTIONS
TOP VIEW
28-PIN DIP
28-PIN SOP
NC
1
28
VCC
A12
2
27
A14
A7
3
26
A13
A6
4
25
A8
A5
5
24
A9
A4
6
23
A11
A3
7
22
OE/OE
A2
8
21
A10
A1
9
20
CE
• Programmable output enable
• Static operation
• TTL compatible I/O
• Three-state outputs
• Single +5 V power supply
• Packages:
28-pin, 600-mil DIP
28-pin, 450-mil SOP
28-pin, 8 × 13.4 mm2 TSOP (Type I)
• JEDEC standard EPROM pinout (DIP)
DESCRIPTION
The LH53259 is a mask-programmable ROM organized as 32,768 × 8 bits. It is fabricated using silicon-gate
CMOS process technology.
A0
10
19
D7
D0
11
18
D6
D1
12
17
D5
D2
13
16
D4
GND
14
15
D3
53259-1
Figure 1. Pin Connections for DIP and
SOP Packages
28-PIN TSOP (Type I)
TOP VIEW
1
28
A10
A11
2
27
CE
OE/OE
A9
3
26
D7
A8
4
25
D6
A13
5
24
D5
A14
6
23
D4
VCC
7
22
D3
NC
8
21
GND
A12
9
20
D2
A7
10
19
D1
A6
11
18
D0
A5
12
17
A0
A4
13
16
A1
A3
14
15
A2
53259-7
Figure 2. Pin Connections for TSOP Package
1
LH53259
CMOS 256K MROM
27
26
2
23
MEMORY
MATRIX
(32,768 x 8)
ADDRESS BUFFER
A10 21
A9 24
A8 25
ADDRESS DECODER
A14
A13
A12
A11
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
COLUMN SELECTOR
A1 9
A0 10
SENSE AMPLIFIER
CE
BUFFER
CE 20
TIMING
GENERATOR
OUTPUT BUFFER
OE
BUFFER
OE/OE 22
28
14
VCC GND
11
D0
12
D1
13
D2
15
D3
16
D4
17
D5
18
D6
19
D7
NOTE: Pin numbers apply to the 28-pin DIP or SOP.
53259-2
Figure 3. LH53259 Block Diagram
PIN DESCRIPTION
SIGNAL
A0 – A14
D0 – D7
CE
OE/OE
PIN NAME
NOTE
SIGNAL
PIN NAME
Address input
VCC
Power supply (+5 V)
Data output
GND
Ground
NC
Chip enable input
Output enable input
NOTE
No connection
1
NOTE:
1. The active level of OE/OE is mask-programmable.
TRUTH TABLE
CE
OE/OE
H
X
L
L/H
H/L
NOTE:
1. X = H or L
MODE
D0 - D7
Non selected
High-Z
Selected
DOUT
SUPPLY CURRENT
NOTE
Standby
1
Operating
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply voltage
2
SYMBOL
RATING
UNIT
VCC
–0.3 to +7.0
V
CMOS 256K MROM
LH53259
Input voltage
VIN
–0.3 to VCC +0.3
V
Output voltage
VOUT
–0.3 to VCC +0.3
V
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
–55 to +150
°C
RECOMMENDED OPERATING CONDITIONS (TA = 0 to +70°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
VCC
4.5
5.0
5.5
V
Supply voltage
DC CHARACTERISTICS (VCC = 5 V ±10%, TA = 0 to +70°C)
PARAMETER
Input ‘Low’ voltage
SYMBOL
CONDITIONS
MIN.
VIL
TYP.
MAX.
UNIT
–0.3
0.8
V
2.2
VCC + 0.3
V
0.4
V
NOTE
Input ‘High’ voltage
VIH
Output ‘Low’ voltage
VOL
I OL = 1.6 mA
Output ‘High’ voltage
VOH
I OH = –400 µA
Input leakage current
| ILI |
V IN = 0 V to VCC
10
µA
Output leakage current
| ILO |
V OUT = 0 V to VCC
10
µA
1
ICC1
t RC = 150 ns
25
ICC2
t RC = 1 µs
20
mA
2
ICC3
t RC = 150 ns
20
ICC4
t RC = 1 µs
15
mA
3
Operating current
Standby current
Input capacitance
Output capacitance
2.4
V
ISB1
CE = V IH
2
mA
ISB2
CE = V CC – 0.2 V
100
µA
CIN
f = 1 MHz
T A = 25°C
10
pF
10
pF
COUT
NOTES:
1. CE/OE = VIH or OE = VIL
2. VIN = VIH/VIL, CE = VIL, outputs open
3. VIN = (VCC – 0.2 V) or 0.2 V, CE = 0.2 V, outputs open
AC CHARACTERISTICS (VCC = 5 V ±10%, TA = 0 to +70°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Read cycle time
tRC
150
Address access time
tAA
Chip enable access time
tACE
Output enable time
tOE
10
Output hold time
tOH
5
CE to output in High-Z
tCHZ
70
ns
OE to output in High-Z
tOHZ
70
ns
NOTE
ns
150
ns
150
ns
80
ns
ns
1
NOTE:
1. This is the time required for the output to become high impedance.
3
LH53259
CMOS 256K MROM
AC TEST CONDITIONS
PARAMETER
RATING
Input voltage amplitude
0.6 V to 2.4 V
Input rise/fall time
10 ns
Input reference level
1.5 V
Output reference level
0.8 V and 2.2 V
Output load condition
1TTL + 100 pF
tRC
A0 - A14
tAA (NOTE)
CE
tACE (NOTE)
tCHZ
OE
OE
tOE (NOTE)
tOHZ
tOH
D0 - D7
DATA VALID
NOTE: Data becomes valid after the intervals tAA, tACE, and tOE from address
inputs, chip enable and output enable, respectively have been met.
53259-3
Figure 4. Timing Diagram
4
CMOS 256K MROM
LH53259
PACKAGE DIAGRAMS
28DIP (DIP028-P-0600)
28
15
DETAIL
13.45 [0.530]
12.95 [0.510]
1
0° TO 15°
14
0.30 [0.012]
0.20 [0.008]
36.30 [1.429]
35.70 [1.406]
15.24 [0.600]
TYP.
4.50 [0.177]
4.00 [0.157]
5.20 [0.205]
5.00 [0.197]
3.50 [0.138]
3.00 [0.118]
0.51 [0.020] MIN.
0.60 [0.024]
0.40 [0.016]
2.54 [0.100]
TYP.
DIMENSIONS IN MM [INCHES]
MAXIMUM LIMIT
MINIMUM LIMIT
28DIP-2
28-pin, 600-mil DIP
28SOP (SOP028-P-0450)
0.50 [0.020]
0.30 [0.012]
1.27 [0.050]
TYP.
1.70 [0.067]
28
15
8.80 [0.346]
8.40 [0.331]
1
12.40 [0.488]
11.60 [0.457]
10.60 [0.417]
14
1.70 [0.067]
0.20 [0.008]
0.10 [0.004]
18.20 [0.717]
17.80 [0.701]
0.15 [0.006]
1.025 [0.040]
2.40 [0.094]
2.00 [0.079]
0.20 [0.008]
0.00 [0.000]
1.025 [0.040]
DIMENSIONS IN MM [INCHES]
MAXIMUM LIMIT
MINIMUM LIMIT
28SOP
28-pin, 450-mil SOP
5
LH53259
CMOS 256K MROM
28TSOP (TSOP028-P-0813)
0.28 [0.011]
0.12 [0.005]
0.55 [0.022]
TYP.
28
15
12.00 [0.472]
11.60 [0.457]
1
13.70 [0.539]
13.10 [0.516]
12.60 [0.496]
12.20 [0.480]
14
8.20 [0.323]
7.80 [0.307]
0.20 [0.008]
0.10 [0.004]
0.15 [0.006]
DETAIL
1.10 [0.043]
0.90 [0.035]
1.20 [0.047]
MAX.
0.425 [0.017]
0.20 [0.008]
0.00 [0.000]
DIMENSIONS IN MM [INCHES]
0 - 10°
0.425 [0.017]
1.10 [0.043]
0.90 [0.035]
0.20 [0.008]
0.00 [0.000]
MAXIMUM LIMIT
MINIMUM LIMIT
28TSOP
28-pin, 8 × 13.4 mm2 TSOP (Type I)
ORDERING INFORMATION
LH53259
Device Type
X
Package
D 28-pin, 600-mil DIP (DIP028-P-0600)
N 28-pin, 450-mil SOP (SOP028-P-0450)
T 28-pin, 8 x 13.4 mm2 TSOP (Type I) (TSOP028-P-0813)
CMOS 256K (32K x 8) Mask Programmable ROM
Example: LH53259D (CMOS 256K (32K x 8) Mask Programmable ROM, 28-pin, 600-mil DIP)
53259-6
6