GMF05LC VISHAY Vishay Semiconductors ESD Protection Diode Array in SOT-363 Features • Transient protection for data lines as per IEC 61000 - 4 - 2 (ESD) 15 kV (air), 8 kV (contact) IEC 61000 - 4 - 5 (Lightning) 5 A (tp = 8/20 µs) • Small package for use in portable electronics • • • • Bidirectional protection of 4 I/O lines Unidirectional protection of 5 I/O lines Low leakage current Ideal for cellular handsets, cordless phones, notebooks, handhelds and digital cameras 18538 6 5 4 1 2 3 Mechanical Data Case: SOT-363 Plastic package Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals Weight: 6 mg Parts Table Part GMF05LC Ordering code GMF05LC-GS08 Marking Remarks GM2 Tape and Reel Absolute Maximum Ratings Ratings at 25 °C, ambient temperature unless otherwise specified Symbol Value Unit Peak pulse power Parameter 8/20 µs waveform Test condition Pppm 70 W Peak pulse current 8/20 µs waveform Ipp 5 A Symbol Value Unit Tj - 55 to + 125 °C TSTG - 55 to + 150 °C Thermal Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Test condition Operating temperature Storage temperature Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Test condition Reverse stand-off voltage Symbol Min Typ. Max 5 VRWM Unit V Reverse breakdown voltage It = 1 mA Reverse leakage current VRWM = 5 V IR Clamping voltage IPP = 1 A, 8/20 µs waveform VC 9.5 V IPP = 5 A, 8/20 µs waveform VC 12.5 V IF = 1 A, 8/20 µs waveform VF 50 pF Peak forward voltage Junction capacitance between I/ VR = 0 V, f = 1 MHz O pins and Gnd Document Number 85851 Rev. 1.2, 02-Apr-04 VBR Cj 6 V 0.1 1.5 µA V www.vishay.com 1 GMF05LC VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 14 PPPM - Peak Pulse Power (kW) 10 VC - Clamping Voltage (V) 12 1 0.1 0.01 0.1 1.0 10 100 1000 td - Pulse Duration (µs) ggmf05lc-hs3_01 8 6 4 2 0 ggmf05lc-hs3_04 Fig. 1 Non -Repetitive Peak Pulse Power vs. Pulse Time Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 10 1 2 3 4 5 6 IPP - Peak Pulse Current (A) Fig. 4 Clamping Voltage vs. Peak Pulse Current 100 75 50 25 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (°C) ggmf05lc-hs3_02 Fig. 2 Pulse Derating Curve IPPM - Peak Pulse Current, % IRSM 110 Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM 100 90 80 70 60 50 td = IPP 2 40 30 20 10 0 0 5 ggmf05lc-hs3_03 10 15 t - Time (µs) 20 25 30 Fig. 3 Pulse Waveform www.vishay.com 2 Document Number 85851 Rev. 1.2, 02-Apr-04 GMF05LC VISHAY Vishay Semiconductors Package Dimensions in mm 14280 Document Number 85851 Rev. 1.2, 02-Apr-04 www.vishay.com 3 GMF05LC VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85851 Rev. 1.2, 02-Apr-04