VISHAY GTF701-HS3

GTF701-HS3
VISHAY
Vishay Semiconductors
2-Line EMI-Filter with ESD -Protection
Features
• Space saving LLP package
• EMI/RFI filtering with integrated
ESD protection for two data lines
• ESD protection to IEC 61000 - 4 - 2 Level 4
• ESD protection to IEC 61000 - 4 - 5 (4 A )
• Low insertion loss up to 10 MHz
• Good attenuation of high frequency signals
• Low operating voltage (5 V)
• Low clamping voltage
• Low leakage current
• Thin film-on-silicon technology
• Ideal for cell phones, RF communication,
and laptop computer applications
Mechanical Data
Case: LLP75-6A Plastic case
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: approx. 5.2 mg
Top view
Pin 1
1
6
2
5
3
4
18821
Pinning:
1 = Input (Output) 1
2 = Ground
3 = Input (Output) 2
4 = Output (Input) 2
5 = not connectect
6 = Output (input) 1
19040
IN (1) 1
2
3
6 OUT (1)
5
4
IN (2)
OUT (2)
Parts Table
Part
GTF701-HS3
Document Number 85827
Rev. 1.3, 05-Jul-04
Ordering code
GTF701-HS3-GS08
Marking
T1
Remarks
Tape and Reel
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GTF701-HS3
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
P
100
mW
ESD Air discharge per
IEC 61000-4-2
Vpp
15
kV
ESD Contact discharge per
IEC 61000-4-2
Vpp
8
kV
IPPM
4
A
Symbol
Value
Unit
Tj
- 40 to + 125
°C
TSTG
- 55 to + 150
°C
Steady -state power
8/20 µs waveform
Max. peak pulse current
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Test condition
Operating temperature
Storage temperature
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Test condition
Reverse stand-off voltage
Symbol
Min
Typ.
VRWM
Reverse breakdown voltage
IR = 1 mA
VBR
Reverse leakage current
VR = 5 V
IR
VR = 3.3 V
IR
Total series resistance
IM = 1 mA
R
Total capacitance
VR = 0 V, f = 1 MHz btw.
I/O and GND
Ctot
Clamping voltage
IPP = 4 A, 8/20 µs waveform
VC
Max
Unit
5
V
1
µA
0.4
µA
55
Ω
6
V
45
50
120
pF
15
V
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
0
Z 0 = 50 Ω
12
Transmission (S21) in dB
VC - Typical Clamping Voltage ( V )
14
10
8
6
4
2
0
1
2
3
4
5
-15
-20
I PP - Peak Pulse Current ( A )
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6
Figure 1. Typical Clamping Voltage vs. Peak Pulse Current
2
-10
-25
0
18898
-5
18899
10
100
1000
10000
Frequency in MHz
Figure 2. Typical Insertion Loss Characteristic
Document Number 85827
Rev. 1.3, 05-Jul-04
GTF701-HS3
VISHAY
Vishay Semiconductors
140
CD - Diode Capacitance ( pF )
f = 1 MHz
120
100
80
60
40
20
0
0
1
2
3
4
5
6
VR - Reverse Voltage ( V)
18900
Figure 3. Typical Capacitance vs. Reverse Voltage
I F - Forward Current ( mA )
10
1
0.1
0.01
0.001
0.4
0.5
0.6
0.7
0.8
0.9
VF - Forward Voltage ( V )
18901
Figure 4. Forward Current vs. Forward Voltage
8
V R - Reverse Voltage ( V )
7
6
5
4
3
2
1
0
0.01
18902
0.1
1
10
100
1000
IR - Reverse Current ( µA )
Figure 5. Typical Reverse Voltage vs. Reverse Current
Document Number 85827
Rev. 1.3, 05-Jul-04
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GTF701-HS3
VISHAY
Vishay Semiconductors
Package Dimensions in mm (Inches)
1 (0.039)
0.6 (0.023)
2
3
6
5
4
1 (0.039)
0.15 (0.006)
0.7 (0.027)
0.5 (0.020)
1
0.25 (0.010)
0.25 (0.010) (6x)
ISO Method E
1.6 (0.062)
1.6 (0.062)
Top View
18058
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Document Number 85827
Rev. 1.3, 05-Jul-04
GTF701-HS3
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85827
Rev. 1.3, 05-Jul-04
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