VISHAY GMF05MC-GS08

GMF05MC
Vishay Semiconductors
Low Capacitance ESD Protection Diode Array
6
5
4
1
2
3
VY
Features
CW
• Transient protection for data lines as per
IEC 61000 - 4 - 2 (ESD) 15 kV (air), 8 kV
e3
(contact), IEC 61000 - 4 - 5 (Lightning)
7 A (tp = 8/20 µs)
• Small package for use in portable electronics
• Bidirectional protection of 4 I/O lines
• Unidirectional protection of 5 I/O lines
• Low leakage current
• Ideal for cellular handsets, cordless phones, notebooks, handhelds and digital cameras
G
M
3
1
18538-4
VY - V = Vishay
Y = year, is variable for digit from 0 to 9
(e.g. 4 = 2004, 5 = 2005)
CW = Calendar Week, is variable for number from 01 to 52
GM3 = code for GMF05MC
Mechanical Data
Case: SOT-363 Plastic case
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: approx. 6.0 mg
Parts Table
Part
GMF05MC
Ordering code
GMF05MC-GS08
Marking
Remarks
GM3
Tape and Reel
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Symbol
Value
Unit
Peak pulse power
Parameter
8/20 µs waveform
Test condition
Pppm
100
W
Peak pulse current
8/20 µs waveform
Ipp
7
A
Symbol
Value
Unit
Tj
- 55 to + 125
°C
TSTG
- 55 to + 150
°C
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Operating temperature
Storage temperature
Document Number 85855
Rev. 1.1, 02-Mar-05
Test condition
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1
GMF05MC
VISHAY
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Test condition
Reverse stand-off voltage
Symbol
Min
Typ.
VRWM
It = 1 mA
Reverse breakdown voltage
VBR
Max
Unit
5
V
6
V
Reverse leakage current
VRWM = 5 V
IR
0.2
µA
Clamping voltage
IPP = 1 A, 8/20 µs waveform
VC
9
V
IPP = 7 A, 8/20 µs waveform
VC
IF = 1 A, 8/20 µs waveform
VF
Peak forward voltage
Junction capacitance between I/ VR = 0 V, f = 1 MHz
O pins and Gnd
12
V
1.5
V
Cj
75
pF
100
- Peak Pulse Power ( kW )
100
75
0.01
0.1
0
0
25
50
75
100 125
150 175
TA - Ambient Temperature (° C)
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
70
60
50
40
I
t d = PP
2
30
20
10
0
10
100
1000
Figure 3. Non -Repetitive Peak Pulse Power vs. Pulse Time
110
100
90
80
1
td - Pulse Duration ( µ A )
18668
Figure 1. Pulse Derating Curve
IPPM - Peak Pulse Current, % IRSM
0.1
P
25
18687
100
90
f = 1 MHz
80
70
60
50
40
30
20
10
0
0
18688
5
10
15
20
25
t - Time ( µs)
Figure 2. Pulse Waveform
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2
1
PPM
50
10
CD - Diode Capacitance ( pF )
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
30
0
18669
1
2
3
4
5
6
VR - Reverse Voltage ( V )
Figure 4. Typical Capacitance vs. Reverse Voltage
Document Number 85855
Rev. 1.1, 02-Mar-05
GMF05MC
VISHAY
Vishay Semiconductors
14
VC - Typical Clamping Voltage ( V )
7
V R - Reverse Voltage ( V )
6
5
4
3
2
1
0
0.01
18670
12
10
8
6
4
2
0
0.1
1
10
100
1000
0
IR - Reverse Current ( µA )
Figure 5. Typical Reverse Voltage vs. Reverse Current
1
2
3
4
5
6
7
8
9
10
I PP - Peak Pulse Current ( A )
18671
Figure 6. Typical Clamping Voltage vs. Peak Pulse Current
Package Dimensions in mm (Inches)
1.00 (0.039)
0.80 (0.031)
0.10 (0.004)
0.25 (0.010)
0.10 (0.004)
ISO Method E
10
Mounting Pad Layout
2.20 (0.087)
1.80 (0.071)
0.30 (0.012)
0.20 (0.009)
0.90 (0.035)
1.60 (0.063)
2.20 (0.087)
2.00 (0.079)
1.15 (0.045)
1.35 (0.053)
0.35 (0.014)
0.65 (0.026) Ref.
0.65 (0.026)
1.3 (0.052)
Document Number 85855
Rev. 1.1, 02-Mar-05
1.30 (0.052) Ref.
14280
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GMF05MC
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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4
Document Number 85855
Rev. 1.1, 02-Mar-05