HITACHI 2SC1881K

2SC1881(K)
Silicon NPN Triple Diffused
Application
High gain amplifier power switching
Outline
TO-220AB
2
1
1
2 3
1. Base
2. Collector
(Flange)
3. Emitter
6.8 kΩ
(Typ)
400 Ω
(Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
3
A
Collector peak current
I C(peak)
6
A
30
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SC1881(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
60
—
—
V
I C = 50 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 50 mA, IC = 0
Collector cutoff current
I CBO
—
—
0.2
mA
VCB = 60 V, IE = 0
I CEO
—
—
0.4
mA
VCE = 30 V, RBE = ∞
hFE
1000
—
—
500
—
—
DC current transfer ratio
VCE = 1.5 V
I C = 1.5 A*1
I C = 2.5 A*1
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.2
V
I C = 2.5 A, IB = 20 mA*1
Turn on time
t on
—
1
—
µs
VCC = 11 V, IC = 2 A,
Turn off time
t off
—
5
—
µs
I B1 = –IB2 = 8 mA
Note:
1. Pulse test.
Area of Safe Operation
10
Maximum Collector Dissipation Curve
iC (peak)
Collector current IC (A)
20
10
IC max
2
1.0
0.5
0.2
Ta = 25°C
1 shot pulse
0.1
0
2
5
50
100
Case temperature TC (°C)
150
s
0m
=1
pw
on
rati
Ope C)
DC = 25°
(T C
Collector power dissipation PC (W)
30
0.05
1
2
5
10
20
50
100
Collector to emitter voltage VCE (V)
2SC1881(K)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
3,000
4
3.0
2.0
1.5
2
1.0
IB = 0.5 mA
1
0
25°C
1,000
–30°C
300
VCE = 1.5 V
Pulse Test
100
0.1
1
2
3
4
Collector to emitter voltage VCE (V)
0.3
1.0
3
Collector current IC (A)
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector to emitter saturation voltage
VCE(sat) (V)
Collector current IC (A)
4.0
3
DC current transfer ratio hFE
TC = 80°C
TC = 25°C
5
TC = 25°C
3 Pulse Test
IC / IB = 200
1.0
100
0.5
0.3
0.3
0.5
1.0
3
5
Collector current IC (A)
3
2SC1881(K)
Response Waveform
Switching Time Test Circuit
IC
90%
VIN
VIN
IB1
R1
0V 10%
IB2
D.U.T.
R2
VIN
0.002 µ
0.002 µ
– +
– +
50 µ
50 µ
50
VBH
4
RL
90%
90%
IC
0A
VCC
tr, tf ≤ 10 ns
pw ≥ 100 µs
duty ratio ≤ 10%
Unit R : Ω
C:F
IC
IB1
IB2
VCC VBB VIN
RL
R1
R2
A
mA
mA
V
V
V
Ω
Ω
Ω
2
8
–8
11
–4
7.2
5
620 910
10%
10%
td
tstg
ton
toff
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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products.
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