Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR NPN SILICON • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts Minimum Efficiency = 40% @ 30 Watts • Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration CASE 395C–01, STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector–Current IC 4.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 103 0.58 Watts °C/W Storage Temperature Range Tstg – 65 to +150 °C RθJC 1.7 °C/W THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case (1) (2) (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 55 — — 55 — — — — — — 10 20 35 80 7.5 7.7 — 40 45 — 8.0 — — Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) Vdc Vdc 4.0 Vdc ICES mAdc ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc) hFE — FUNCTIONAL TESTS Collector–Base Amplifier Power Gain (VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) Gpe Collector Efficiency (VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) η Input Return Loss (VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) IRL Output Mismatch Stress VCC = 28 Vdc, Pout = 30 Watts, f = 1600 MHz, Load VSWR = 3:1, All phase angles at frequency of test Ψ REV 3 2 dB % dB No Degradation in Output Power L3 B1 28 Vdc C1 C2 R1 C3 C4 L2 L1 C5 Board Material – Teflon Glass Laminate Dielectric Thickness = 0.30″, εr = 2.55″, 2.0 oz. Copper B1 C1, C5 C2 C3 Fair Rite Bead on #24 Wire 100 pF, B Case, ATC Chip Cap 0.1 µF, Dipped Mica Cap 0.1 µF, Chip Cap C4 L1, L2 L3 R1 47 µF, 50 V, Electrolytic 3 Turns, #18, 0.133″ ID, 0.15″ Long 9 Turns, #24 Enamel 82 Ω, 1.0 W, Carbon Figure 1. MRF16030 Test Fixture Schematic f = 1.5 GHz 1.7 GHz ZOL* 1.6 GHz 1.6 GHz Zin 1.7 GHz f = 1.5 GHz Zo = 10 Ω VCC = 28 Vdc, Pout = 30 W f MHz Zin Ohms ZOL* Ohms 1500 3.05 + j 4.88 2.66 + j 2.53 1600 4.32 + j 6.00 1.79 + j 2.80 1700 5.62 + j 5.79 1.51 + j 2.64 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 2. Series Equivalent Input/Output Impedance REV 3 3 Pout , OUTPUT POWER (WATTS) 45 f = 1.6 GHz 40 1.64 GHz 35 30 25 VCC = 28 Vdc 20 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 Pin, INPUT POWER (WATTS) 8.0 8.5 Figure 3. Output Power versus Input Power REV 3 4 9.0 PACKAGE DIMENSIONS –A– U Q 2 PL 1 0.51 (0.020) M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. –B– DIM A B C D E H J K N Q U 3 K 2 D N STYLE 2: PIN 1. EMITTER 2. COLLECTOR 3. BASE E J H C –T– SEATING PLANE CASE 395C–01 ISSUE A Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 3 5 INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.215 0.225 0.055 0.070 0.079 0.091 0.004 0.006 0.210 0.240 0.315 0.330 0.125 0.135 0.560 BSC MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 5.46 5.72 1.40 1.78 2.01 2.31 0.10 0.15 5.33 6.10 8.00 8.38 3.18 3.42 14.23 BSC