Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50% Min 20 W, 400 MHz RF POWER TRANSISTOR NPN SILICON • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability • Computer–Controlled Wirebonding Gives Consistent Input Impedance MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 33 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous Collector Current — Peak IC 2.2 3.0 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 55 310 Watts mW/°C Storage Temperature Range Tstg –65 to +150 °C CASE 244–04, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 3.2 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) V(BR)CEO 33 — — Vdc Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Collector–Base Breakdown Voltage (IC = 20 mAdc, IE = 0) V(BR)CBO 60 — — Vdc Emitter–Base Breakdown Voltage (IE = 2.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 2.0 mAdc hFE 20 — 80 — Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Cob — 20 24 pF Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 20 W, f = 400 MHz) GPE 10 11 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 20 W, f = 400 MHz) η 50 60 — % Load Mismatch (VCC = 28 Vdc, Pout = 20 W, f = 400 MHz, VSWR = 30:1 all phase angles) ψ DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Figure 1) No Degradation in Output Power + '& $ "'& + $ C1, C2, C6 — 1.0C–C20 pF Johanson Trimmer (JMC 5501) C3, C4 — 47 pF ATC Chip Capacitor C5, C8 — 0.1 µF Erie Redcap C7 — 0.5C–C10 pF Johanson Trimmer (JMC 5201) C9, C10 — 680 pF Feedthru C11 — 1.0 µF 50 Volt Tantalum C12 — 0.018 µF Vitramon Chip Capacitor L1 — 0.33 µH Molded Choke with Ferroxcube Bead L1 — (Ferroxcube 56–590–65/4B) on Ground End L2 — 6 Turns #20 Enamel, 1/4″ ID, Closewound L3 — 4 Turns #20 Enamel, 1/8″ ID, Closewound L4 — Ferroxcube VK200–19/4B R1 — 5.1 Ω 1/4 Watt Z1 — Microstrip 0.1″ W x 1.35″ L Z2 — Microstrip 0.1″ W x 0.55″ L Z3 — Microstrip 0.1″ W x 0.8″ L Z4 — Microstrip 0.1″ W x 1.75″ L Board — Glass Teflon εr = 2.56, t = 0.062″ Input/Output Connectors — Type N Figure 1. 400 MHz Test Circuit Schematic 2 + + ( $ !'&"'& "!'&"'&"!)$)&&% 8>= "!'&"'&"!)$)&&% 8>= "37 ) ) ) ) ) ) ( ( Figure 3. Output Power versus Input Power "37 ) " !! &&$"$ "!)$ . "!'&"'&"!)$)&&% 8>= "37 "'& "!)$ )&&% Figure 2. Output Power versus Frequency ) 0 B 3 0 $#' * B ) ( ( 0 B "8 ) ( ( ( %'""* (!& (!&% 0 $#' * B Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency C 0 B +37 C +! 0 B "8>= ) ( ( 0 B +37 !26< +! !26< D 4 4 D 4D D 4D 4 4 4 D 4 D +! 874>1,=/ 80 =2/ 89=36>6 58,. 369/.,7-/ 37=8 @23-2 =2/ ./?3-/ 8>=9>= 89/;,=/< ,= , 13?/7 8>=9>= 98@/; +! ?85=,1/ ,7. 0;/:>/7-A Figure 6. Series Equivalent Impedance 4 PACKAGE DIMENSIONS D K M T F A J U P S C WRENCH FLAT E %&* " B CASE 244–04 ISSUE J Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 5 ! &&$ % &&$ !&!$ !