MOTOROLA MRF6404

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by MRF6404/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
The MRF6404 is designed for 26 volts microwave large signal, common
emitter, class AB linear amplifier applications operating in the range 1.8 to
2.0 GHz.
• Specified 26 Volts, 1.88 GHz Characteristics
Output Power — 30 Watts
Gain — 7.5 dB Min @ 30 Watts
Efficiency — 38% Min @ 30 Watts
• Characterized with Series Equivalent Large–Signal Parameters from
1.8 to 2.0 GHz
• To be used in Class AB for DCS1800 and PCS1900/Cellular Radio
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
30 W, 1.88 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
24
Vdc
Collector–Emitter Voltage
VCES
60
Vdc
Emitter–Base Voltage
VEBO
4
Vdc
Collector–Current — Continuous
IC
10
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
125
0.71
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
1.4
°C/W
Collector–Emitter Voltage
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 50 mA, IB = 0)
V(BR)CEO
24
29
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc)
V(BR)EBO
4
5
—
Vdc
Collector–Base Breakdown Voltage (IC = 50 mAdc)
V(BR)CES
60
68
—
Vdc
Collector–Base Breakdown Voltage (IC = 50 mAdc, RBE = 75 Ω)
V(BR)CER
40
56
—
Vdc
ICES
—
—
10
mA
hFE
20
50
120
—
OFF CHARACTERISTICS
Collector Cutoff Current (VCE = 30 V, VBE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)
(1) Thermal resistance is determined under specified RF operating condition.
REV 2
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1996
MRF6404 MRF6404K
1
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Cob
30
38
—
pF
Common–Emitter Amplifier Power Gain
(VCC = 26 V, Pout = 30 W, ICQ = 150 mA, f = 1.88 GHz)
Gpe
7.5
8.5
—
dB
Common–Emitter Amplifier Power Gain
(VCC = 26 V, Pout = 28 W, ICQ = 150 mA)
(f = 1.99 GHz)
Gpe
7
8
—
dB
38
35
43
40
—
—
30
28
35
33
—
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 V, IE = 0, f = 1 MHz)
For information only. This part is collector matched.
FUNCTIONAL TESTS
Collector Efficiency
(VCC = 26 V, Pout = 30 W, f = 1.88 GHz)
(VCC = 26 V, Pout = 28 W, f = 1.99 GHz)
Output Power at 1 dBc
(VCC = 26 V, f = 1.88 GHz)
(VCC = 26 V, f = 1.99 GHz)
Output Mismatch Stress: VSWR = 3:1 (all phase angles)
(VCC = 26 Vdc, Pout = 25 W, ICQ = 150 mA, f = 1.88 GHz)
η
%
P1dBc
Watts
Ψ
No Degradation in Output Power
DCS EVALUATION
f = 1.8 GHz
Zin
1.9 GHz
1.9 GHz
ZOL*
f = 1.8 GHz
Zo = 20 Ω
f
(GHz)
Zin
(Ω)
ZOL*
(Ω)
1.8
4.3 + j6.1
2.7 – j1.0
1.85
4.6 + j5.3
2.9 + j0.3
1.9
4.8 + j5.0
3.0 + j1.2
ZOL*: Conjugate of optimum load impedance into
which the device operates at a given output
power, voltage, current and frequency.
Figure 1. Input and Output Impedances with Circuit Tuned for Maximum Gain
@ VCC = 26 V, ICQ = 150 mA, Pout = 30 W
MRF6404 MRF6404K
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
40
f = 1.7 GHz
VCC = 26 V
ICQ = 150 mA
35
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
40
1.9 GHz
30
1.8 GHz
25
20
15
10
5
35
Pin = 5 W
30
25
15
10
1W
5
0
0
1
2
3
4
Pin, INPUT POWER (WATTS)
5
0
1.70
6
Figure 2. Output Power versus Input Power
1.75
1.80
f, FREQUENCY (GHz)
1.85
1.90
Figure 3. Output Power versus Frequency
– 25
12
3rd Order
– 30
VCC = 26 V
ICQ = 150 mA
f = 1.88 GHz
9
6
– 35
– 40
PHASE (DEGREE)
IMD, INTERMODULATION DISTORTION (dBc)
3W
VCC = 26 V
ICQ = 150 mA
20
5th
– 45
7th
– 50
VCC = 26 V
ICQ= 150 mA
f = 1.88 & 1.8801 GHz
– 55
3
0
–3
–6
–9
– 60
0
20
10
30
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation versus Output Power
MOTOROLA RF DEVICE DATA
40
0
4
8
12
16
20
24
28
32
36
40
Pout, OUTPUT POWER (WATTS)
Figure 5. AM/PM Conversion
MRF6404 MRF6404K
3
T2
C11
VBB
VCC
+
R2
R3
+
R4
T1
P1
L1
C10
C13
C12
C9
C7
C5
R1
BASE BIAS CIRCUIT
C4
Z 4, Θ4
Z 11,Θ11
C8
C20
C2
Z5,Θ5
C1
Z2,Θ2
Z1,Θ1
RF
INPUT
Z6,Θ6
Z8,Θ8
Z10,Θ10
TRF1
Z12,Θ12
RF
OUTPUT
ΘB
RF CIRCUIT
CT2
C21
CT3
Decoupling Base Bias Circuit
Base Bias Circuit
C12, C13
P1
R3
R4
T1,T2
Z7,Θ7
15 nF, Chip Capacitor, Vitramon (0805 A153 JXB)
1 KΩ, Trimmer
47 Ω, Chip Resistor, 0805
330 Ω, Chip Resistor, 0805
Motorola MJD 31C
C4
C5, C9
C7, C11
C8
C10
R1
R2
68 pF, Chip Capacitor, ATC 100A
330 pF, Chip Capacitor, Vitramon (0805 A331 JXB)
4.7 µF, 63 V, Electrolytic Capacitor
68 pF, Chip Capacitor, ATC 100A
15 nF, Chip Capacitor, Vitramon (0805 A153 JXB)
1.5 Ω, Chip Resistor, 0805
56 Ω, Chip Resistor, 1206
RF Circuit
C1, C2
C20, C21
CT2
CT3
TRF1
68 pF, Chip Capacitor, ATC 100A
1.3 pF, Chip Capacitor, ATC 100A
Trimmer Capacitor, Gigatrim, Ref 37281
Trimmer Capacitor, Gigatrim, Ref 37291
MRF6404
PC Board Material:
εr = 2.55, H = 0.508 mm, T = 0.035 mm
All Electrical Lengths Are Referenced from λg @ f = 1.9 GHz
Z1 : 50 Ω Θ1 : 10°
Z2 : 50 Ω Θ2 : 74.5° ΘB : 16.5°
Z4 : 74 Ω Θ4 : 68°
Z5 : 12.8 Ω Θ5 : 21°
Z6 : 10.4 Ω Θ6 : 49.5°
Z7 : 18 Ω Θ7 : 36.5°
Z8 : 45 Ω Θ8 : 20°
Z10 : 50 Ω Θ10 : 10°
Z11 : 74 Ω Θ11 : 74.5°
Z12 : 50 Ω Θ12 : 10°
Figure 6. 1.80 – 1.88 GHz Test Circuit Electrical Schematic and Components List
MRF6404 MRF6404K
4
MOTOROLA RF DEVICE DATA
(Not to Scale)
Teflon Glass 0.5 mm – Double Side 35 µm Cu.
Figure 7. 1.80 – 1.88 GHz PCN Test Circuit Photomaster
VBB
+VCC
C12 C13
T1
C11
Â
Â
Â
C7
L1
T2
R3 P1 R4
C10 R1
C8
R2
C9
Â
Â
Â
C20
C1
CT2
C21
M
RF INPUT
C5
C4
Â
Â
RF OUTPUT
C2
CT3
Figure 8. 1.80 – 1.88 GHz PCN Test Circuit Components Layout
MOTOROLA RF DEVICE DATA
MRF6404 MRF6404K
5
PCS EVALUATION
2.0 GHz
f
(GHz)
Zin
(Ω)
ZOL*
(Ω)
1.90
4.9 + j3.0
3.2 + j0.5
1.93
5.4 + j2.5
3.3 + j1.2
1.97
5.6 + j1.4
3.4 + j1.5
2.00
5.4 – j0.2
3.6 + j2.5
f = 1.9 GHz
ZOL*
Zin
f = 1.9 GHz
2.0 GHz
Zo = 20 Ω
ZOL*: Conjugate of optimum load impedance into
which the device operates at a given output
power, voltage, current and frequency.
Figure 9. Input and Output Impedances with Circuit Tuned for Maximum Gain
@ VCC = 26 V, ICQ = 150 mA, Pout = 28 W
MRF6404 MRF6404K
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
40
35
Pout , OUTPUT POWER (WATTS)
f = 1.9 GHz
30
2 GHz
25
20
15
10
VCC = 26 V
ICQ = 150 mA
5
3
4
2
Pin, INPUT POWER (WATTS)
5
25
3W
20
1W
10
0
1.90
6
1.925
1.95
f, FREQUENCY (GHz)
1.975
2.00
Figure 11. Output Power versus Frequency
40
40
35
30
25
50
η
20
45
15
40
VCC = 26 V
ICQ = 150 mA
10
35
η , EFFICIENCY (%)
f = 2 GHz
Pout , OUTPUT POWER (WATTS)
35
Pout , OUTPUT POWER (WATTS)
VCC = 26 V
ICQ = 150 mA
15
Figure 10. Output Power versus Input Power
f = 1.93 GHz
30
25
50
η
20
45
15
40
VCC = 26 V
ICQ = 150 mA
10
35
5
5
0
Pin = 5 W
30
5
0
1
35
η , EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
40
1
2
4
3
6
5
0
1
2
Pin, INPUT POWER (WATTS)
3
4
5
6
Pin, INPUT POWER (WATTS)
Figure 12. Output Power and Efficiency
versus Input Power
Figure 13. Output Power and Efficiency versus
Input Power
Pout , OUTPUT POWER (WATTS)
40
35
Pin = 5 W
30
25
3W
20
15
VCC = 26 V
ICQ = 150 mA
1W
10
5
0
1.90
1.925
1.95
f, FREQUENCY (GHz)
1.975
2.00
Figure 14. Output Power versus Frequency
MOTOROLA RF DEVICE DATA
MRF6404 MRF6404K
7
T2
C11
VBB
+
R2
R3
C10
P1
C12
C9
+
R4
T1
C7
L1
C13
C5
R1
BASE BIAS CIRCUIT
C4
Z 4, Θ 4
Z 11,Θ 11
C8
C2
Z5,Θ5
C1
Z2,Θ2
Z1,Θ1
RF
INPUT
Z6,Θ6
Z7,Θ7
Z8,Θ8
Z10,Θ10
TRF1
Z12,Θ12
RF
OUTPUT
ΘB
RF CIRCUIT
CT1
Base Bias Circuit
C12, C13
P1
R3
R4
T1,T2
VCC
CT2
Decoupling Base Bias Circuit
15 nF, Chip Capacitor, Vitramon (0805 A153 JXB)
1 KΩ, Trimmer
47 Ω, Chip Resistor, 0805
330 Ω, Chip Resistor, 0805
Motorola MJD 31C
C4
C5, C9
C7, C11
C8
C10
R1
R2
68 pF, Chip Capacitor, ATC 100A
330 pF, Chip Capacitor, Vitramon (0805 A331 JXB)
4.7 µF, 63 V, Electrolytic Capacitor
68 pF, Chip Capacitor, ATC 100A
15 nF, Chip Capacitor, Vitramon (0805 A153 JXB)
1.2 Ω, Chip Resistor, 0805
56 Ω, Chip Resistor, 1206
RF Circuit
C1, C2
C20, C21
CT1, CT2
TRF1
68 pF, Chip Capacitor, ATC 100A
1.3 pF, Chip Capacitor, ATC 100A
Trimmer Capacitor, Gigatrim, Ref 37271
MRF6404
PC Board Material:
εr = 2.55, H = 0.508 mm, T = 0.035 mm
All Electrical Lengths Are Referenced from λg @ f = 1.9 GHz
Z1 : 50 Ω Θ1 : 10°
Z2 : 50 Ω Θ2 : 74.5° ΘB : 16.5°
Z4 : 74 Ω Θ4 : 68°
Z5 : 12.8 Ω Θ5 : 21°
Z6 : 10.4 Ω Θ6 : 49.5°
Z7 : 18 Ω Θ7 : 36.5°
Z8 : 45 Ω Θ8 : 20°
Z10 : 50 Ω Θ10 : 10°
Z11 : 74 Ω Θ11 : 60°
Z12 : 50 Ω Θ12 : 10°
Figure 15. 1.9 – 2.0 GHz Test Circuit Electrical Schematic and Components List
MRF6404 MRF6404K
8
MOTOROLA RF DEVICE DATA
(Not to Scale)
Teflon Glass 0.5 mm – Double Side 35 µm Cu.
Figure 16. 1.9 – 2.0 GHz Test Circuit Photomaster
VBB
+VCC
C12 C13
T1
Â
Â
C7 +
L1
T2
R3 P1 R4
C10 R1
C8
R2
C9
C1
CT1
C4
Â
M
RF INPUT
C5
RF OUTPUT
C2
CT2
Figure 17. 1.9 – 2.0 GHz Test Circuit Components Layout
MOTOROLA RF DEVICE DATA
MRF6404 MRF6404K
9
PACKAGE DIMENSIONS
–A–
U
Q 2 PL
1
0.51 (0.020)
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
H
J
K
N
Q
U
–B–
3
K
2
D
N
INCHES
MIN
MAX
0.739
0.750
0.240
0.260
0.165
0.198
0.215
0.225
0.055
0.070
0.079
0.091
0.004
0.006
0.210
0.240
0.315
0.330
0.125
0.135
0.560 BSC
MILLIMETERS
MIN
MAX
18.77
19.05
6.10
6.60
4.19
5.03
5.46
5.72
1.40
1.78
2.01
2.31
0.10
0.15
5.33
6.10
8.00
8.38
3.18
3.42
14.23 BSC
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
E
J
C
H
–T–
SEATING
PLANE
CASE 395C–01
ISSUE A
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
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MRF6404 MRF6404K
10
◊
*MRF6404/D*
MRF6404/D
MOTOROLA RF DEVICE
DATA