Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR NPN SILICON • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimum Efficiency = 40% @ 6 Watts • Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 395C–01, STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector–Current IC 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 26 0.15 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C RθJC 6.8 °C/W Rating THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case (1) (2) (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 2 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF16006 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 55 — — 55 — — 4.0 — — — — 2.5 20 — 80 11 — — 7.4 — — 40 45 — — 8.0 — Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 40 mAdc, VBE = 0) V(BR)CES Collector–Base Breakdown Voltage (IC = 40 mAdc, IE = 0) V(BR)CBO Emitter–Base Breakdown Voltage (IE = 2.5 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) Vdc Vdc Vdc ICES mAdc ON CHARACTERISTICS DC Current Gain (ICE = 0.2 Adc, VCE = 5.0 Vdc) hFE — DYNAMIC CHARACTERISTICS Output Capacitance (VCB= 28 Vdc, f = 1.0 MHz) Cob pf FUNCTIONAL TESTS Common–Base Amplifier Power Gain (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) Gpe Collector Efficiency (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) η Return Loss (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) IRL Output Mismatch Stress (VCC = 28 Vdc, Pout = 6 Watts, f = 1600 MHz, Load VSWR = 3:1 all phase angles at frequency of test) ψ MRF16006 2 dB % dB No Degradation in Output Power MOTOROLA RF DEVICE DATA L3 B1 L2 C1 28 Vdc R1 C2 C3 C4 L1 C5 Board Material – Teflon Glass Laminate Dielectric Thickness – 0.30″, εr = 2.55″, 2.0 oz. Copper B1 C1, C5 C2 C3 Fair Rite Bead on #24 Wire 100 pF, B Case, ATC Chip Cap 0.1 µF, Dipped Mica Cap 0.1 µF, Chip Cap C4 L1, L2 L3 R1 47 µF, 50 V, Electrolytic Cap 3 Turns, #18, 0.133″ ID, 0.15″ Long 9 Turns, #24 Enamel 82 Ω, 1.0 W, Carbon Resistor Figure 1. MRF16006 Test Fixture Schematic f = 1.5 GHz 1.6 GHz 1.7 GHz Zo = 10 Ω 1.7 GHz 1.6 GHz Zin ZOL* f = 1.5 GHz VCC = 28 Vdc, Pout = 6 W f MHz Zin Ohms ZOL* Ohms 1500 6.28 + j 8.53 1.22 – j 1.37 1600 7.04 + j 9.00 1.58 – j 0.53 1700 9.55 + j 12.86 1.71 + j 0.39 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 2. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF16006 3 Pout , OUTPUT POWER (WATTS) 12 10 f = 1.6 GHz 8 1.64 GHz 6 VCC = 28 Vdc 4 2 0 0.25 0.45 0.65 0.85 1.05 Pin, INPUT POWER (WATTS) 1.25 1.45 Figure 3. Output Power versus Input Power MRF16006 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS –A– U Q 2 PL 1 0.51 (0.020) M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. –B– 3 K 2 STYLE 2: PIN 1. EMITTER 2. COLLECTOR 3. BASE D N E DIM A B C D E H J K N Q U INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.215 0.225 0.055 0.070 0.079 0.091 0.004 0.006 0.210 0.240 0.315 0.330 0.125 0.135 0.560 BSC MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 5.46 5.72 1.40 1.78 2.01 2.31 0.10 0.15 5.33 6.10 8.00 8.38 3.18 3.42 14.23 BSC J H C –T– SEATING PLANE CASE 395C–01 ISSUE A MOTOROLA RF DEVICE DATA MRF16006 5 Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF16006 6 ◊ *MRF16006/D* MRF16006/D MOTOROLA RF DEVICE DATA