MA-COM MRF321

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by MRF321/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed primarily for wideband large–signal driver and predriver amplifier
stages in 200–500 MHz frequency range.
• Guaranteed Performance at 400 MHz, 28 Vdc
Output Power = 10 Watts
Power Gain = 12 dB Min
Efficiency = 50% Min
10 W, 400 MHz
RF POWER
TRANSISTOR
NPN SILICON
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability
• Computer–Controlled Wirebonding Gives Consistent Input Impedance
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
Rating
VCEO
33
Vdc
Collector–Base Voltage
VCBO
60
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
Collector Current — Peak
IC
1.1
1.5
Adc
Total Device Dissipation @ TA = 25°C (1)
Derate above 25°C
PD
27
160
Watts
mW/°C
Storage Temperature Range
Tstg
–65 to +150
°C
CASE 244–04, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
6.4
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V(BR)CEO
33
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CES
60
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 20 mAdc, IE = 0)
V(BR)CBO
60
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 2.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
ICBO
—
—
1.0
mAdc
hFE
20
—
80
—
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mA, VCE = 5.0 Vdc)
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
1
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Cob
—
10
12
pF
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 10 W, f = 400 MHz)
GPE
12
13
—
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 10 W, f = 400 MHz)
η
50
60
—
%
Load Mismatch
(VCC = 28 Vdc, Pout = 10 W, f = 400 MHz,
VSWR = 30:1 all phase angles)
ψ
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (Figure 1)
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No Degradation in Output Power
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C1, C2, C3 — 1.0C–C20 pF Johanson Trimmer (JMC 5501)
C3, C4 — 47 pF ATC Chip Capacitor
C5, C10 — 0.1 µF Erie Redcap
C7 — 0.5C–C10 pF Johanson Trimmer (JMC 5201)
C8 — 0.018 µF Vitramon Chip Capacitor
C9 — 200 pF UNELCO Capacitor
C11, C12 — 680 pF Feedthru
C13 — 1.0 µF, 50 Volt Tantalum Capacitor
D1 — 1N4001
L1 — 0.33 µH Molded Choke with Ferroxcube Bead
L1 — (Ferroxcube 56–590–65/4B) on Ground End of Coil
L2 — 4 Turns #20 Enamel, 1/8″ ID
L3 — 6 Turns #20 Enamel, 1/4″ ID
L4 — Ferroxcube VK200–19/4B
R1 — 5.1 Ω, 1/4 Watt
R2 — 120 Ω, 1.0 Watt
R3 — 20 Ω, 1/2 Watt
R4 — 47 Ω, 1/2 Watt
Z1 — Microstrip 0.1″ W x 1.35″ L
Z2 — Microstrip 0.1″ W x 0.55″ L
Z3 — Microstrip 0.1″ W x 0.8″ L
Z4 — Microstrip 0.1″ W x 1.75″ L
Board — Glass Teflon, εR = 2.56, t = 0.062″
Input/Output Connectors — Type N
Figure 1. 400 MHz Test Circuit Schematic
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Figure 2. Output Power versus Frequency
Figure 3. Output Power versus Input Power
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Figure 4. Output Power versus Supply Voltage
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Figure 5. Power Gain versus Frequency
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0 B
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Figure 6. Series Equivalent Impedance
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PACKAGE DIMENSIONS
D
K
M
T
F
A
J
U
P
S
C
WRENCH FLAT
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CASE 244–04
ISSUE J
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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