Ordering number : ENN7082 2SK2628LS N-Channel Silicon MOSFET 2SK2628LS Ultrahigh-Speed Switching Applications Preliminary Features • • Package Dimensions Low ON-resistance. Low Qg. unit : mm 2078C [2SK2628LS] 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2 14.0 3.6 0.9 0.75 0.7 1 2 3 2.4 1 : Gate 2 : Drain 3 : Source Specifications 2.55 Absolute Maximum Ratings at Ta=25°C Parameter Symbol 2.55 SANYO : TO-220FI(LS) Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 Gate-to-Source Voltage VGSS ±30 V 6 A Drain Current (DC) ID Drain Current (Pulse) IDP V 24 A 2.0 W Allowable Power Dissipation PD 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ ID=1mA, VGS=0 VDS=600V, VGS=0 VGS=±30V, VDS=0 600 VDS=10V, ID=1mA 3.5 Forward Transfer Admittance VGS(off) yfs VDS=10V, ID=4A 2.0 Static Drain-to-Source On-State Resistance RDS(on) ID=2A, VGS=15V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions IDSS IGSS max V 1.0 mA ±100 nA 5.5 V 1.1 Ω 4.0 0.9 Marking : K2628 Unit S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O2501 TS IM TA-3474 No.7082-1/4 2SK2628LS Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 1050 Output Capacitance 320 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz Total Gate Charge Qg 180 pF VDS=200V, VGS=10V, ID=6A 30 nC ns Turn-ON Delay Time td(on) See specified Test Circuit. 23 Rise Time tr td(off) See specified Test Circuit. 35 ns See specified Test Circuit. 90 ns Turn-OFF Delay Time Fall Time tf VSD Diode Forward Voltage See specified Test Circuit. 35 IS=6A, VGS=0 ns 0.85 1.2 V Switching Time Test Circuit PW=1µs D.C.≤0.5% VDD=200V ID=4A RL=50Ω VGS=15V D VOUT G 2SK2628LS RGS=50Ω P.G S ID -- VDS 10 7 25°C 6 5 4 7V 3 Tc= --25°C 10 Drain Current, ID -- A 8 Drain Current, ID -- A VDS=10V 15V V 10 8V 9 2 8 75°C 6 4 2 VGS=6V 1 0 0 0 2 4 6 8 10 Drain-to-Source Voltage, VDS -- V 12 0 ID=6A 1.2 1.1 2A 1.0 0.9 0.8 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT03676 6 8 10 12 16 14 18 20 IT03675 RDS(on) -- Tc 3.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.3 4 Gate-to-Source Voltage, VGS -- V Tc=25°C 4A 2 IT03674 RDS(on) -- VGS 1.4 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID -- VGS 12 2.5 2.0 V 10 S= 5V G V =1 A, S =2 VG ID , A =2 ID 1.5 1.0 0.5 0 --50 --25 0 25 50 75 100 Case Temperature, Tc -- °C 125 150 IT03677 No.7082-2/4 2SK2628LS 2 1.0 7 5 3 0.1 7 5 3 2 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 0 Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF Ciss 1000 7 Coss Crss 2 100 0.9 1.2 1.5 IT03679 VGS -- Qg 10 VDS=200V ID=6A 2 3 0.6 Diode Forward Voltage, VSD -- V f=1MHz 5 0.3 IT03678 Ciss, Coss, Crss -- VDS 3 Tc= 0.01 7 5 3 2 0.001 2 0.1 0.1 1.0 7 5 3 2 C 5°C --2 = Tc °C 75 °C 25 3 VGS=0 10 7 5 3 2 75°C 25°C 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 7 IF -- VSD 3 2 VDS=10V --25° yfs -- ID 10 8 6 4 2 7 0 5 5 0 10 15 20 25 Drain-to-Source Voltage, VDS -- V 15 20 IDP=24A 3 2 2 td(off) 100 7 tf 5 tr 3 2 td(on) 10 0.1 2 3 5 7 1.0 2 5 7 Drain Current, ID -- A 2 10 ID=6A 10 1.0 7 5 Operation in this area is limited by RDS(on). 3 2 0.1 7 5 Tc=25°C Single pulse 2 3 5 7 10 Allowable Power Dissipation, PD -- W 1.0 0.5 3 5 7 100 2 3 5 7 1000 IT03683 PD -- Tc 40 1.5 2 Drain-to-Source Voltage, VDS -- V IT03682 2.0 1m s m s 1 DC 00 op ms era tio n 3 2 0.01 1.0 3 PD -- Ta 2.5 10 7 5 3 2 3 30 IT03681 <1µs 10 µs 10 0µ s 5 3 25 ASO 5 Drain Current, ID -- A Switching Time, SW Time -- ns 10 Total Gate Charge, Qg -- nC VDD=200V 7 5 IT03680 SW Time -- ID 1000 Allowable Power Dissipation, PD -- W 0 30 35 30 25 20 15 10 5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03684 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT03685 No.7082-3/4 2SK2628LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2001. Specifications and information herein are subject to change without notice. PS No.7082-4/4