2SK3850 Ordering number : ENN8193 N-Channel Silicon MOSFET 2SK3850 General-Purpose Switching Device Applications Features • • • Best suited for motor drive. Low ON-resistance. Low Qg. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 Gate-to-Source Voltage VGSS ±30 V ID 0.7 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 2.8 A 1.0 W Allowable Power Dissipation PD 15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=600V, VGS=0 VGS(off) yfs VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.35A RDS(on) Ciss VGS=10V, ID=0.35A VDS=20V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance Crss Ratings min typ max 600 V 2.5 280 100 µA ±100 nA 3.5 560 14 Marking :K3850 V mS 18.5 96 VDS=20V, f=1MHz VDS=20V, f=1MHz Unit Ω pF 29 pF 16 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31005PB TS IM TA-101202 No.8193-1/4 2SK3850 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 9 Rise Time tr td(off) See specified Test Circuit. 11 ns See specified Test Circuit. 16 ns See specified Test Circuit. 50 ns 4 nC Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge Diode Forward Voltage VSD 2.3 6.5 5.0 4 0.5 0.5 2.3 2.3 2.5 2 1.2 7.0 5.5 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 0.6 0.8 7.5 0.8 1.6 0.5 0.5 0.85 1.2 0.6 2 V 2.3 0.85 0.7 1 1.2 7.0 5.5 0.89 Package Dimensions unit : mm 2092B 1.5 6.5 5.0 4 IS=0.7A, VGS=0 1.5 Package Dimensions unit : mm 2083B VDS=200V, VGS=10V, ID=0.7A ns 3 1.2 0 to 0.2 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA SANYO : TP 2.3 Switching Time Test Circuit VDD=200V VIN 10V 0V ID=0.35A RL=571Ω VIN D VOUT PW=1µs D.C.≤0.5% G 2SK3850 P.G RGS 50Ω S No.8193-2/4 2SK3850 0.20 VGS=4V 0.15 0.15 0.10 0.05 0.05 0 1 2 3 4 5 6 7 8 9 Drain-to-Source Voltage, VDS -- V 0 10 20 15 10 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25 5 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 3 4 5 6 25 0V 20 ,V 5A =1 GS .3 =0 ID 15 10 5 0 --60 16 --40 --20 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 160 IT09152 VGS=0 7 7 140 IF -- VSD 1.0 VDS=10V 7 IT08303 RDS(on) -- Tc IT09151 yfs -- ID 1.0 2 Gate-to-Source Voltage, VGS -- V 30 Tc=25°C ID=0.35A 2 1 IT08302 RDS(on) -- VGS 30 5 0.1 7 7 5 3 2 5 3 0.01 0.1 2 3 5 7 2 0.1 3 5 Drain Current, ID -- A 0.01 0.4 7 1.0 IT08306 0.5 Ciss, Coss, Crss -- pF tf 100 7 5 td (o ff) 3 2 tr 10 0.9 1.0 IT09153 f=1MHz Ciss 100 7 5 Coss 3 Crss 2 10 td(on) 7 5 0.8 2 3 2 0.7 Ciss, Coss, Crss -- VDS 3 VDD=200V VGS=10V 7 5 0.6 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 3 0.01 C 2 2 --25° 3 3 C C 5° --2 = °C Tc 75 25° C Forward Current, IF -- A ° 25 5 Tc= 75° C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.20 0.10 0 Forward Transfer Admittance, yfs -- S 0.25 C 0.25 0.30 --25°C 0.30 0.35 25°C Drain Current, ID -- A 0.35 C 75° °C 0.40 6V 0 Switching Time, SW Time -- ns VDS=10V Tc=7 5° 0.40 Drain Current, ID -- A 0.45 5V Tc= --25°C V 10 8V 0.45 ID -- VGS 0.50 25 ID -- VDS 0.50 7 5 2 3 5 7 0.1 2 Drain Current, ID -- A 3 5 7 1.0 IT09154 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT08309 No.8193-3/4 2SK3850 VGS -- Qg 10 <10µs 10 2 0µ 8 7 6 5 4 3 2 s 1.0 7 5 ID=0.7A DC 3 2 1m s 10 10 0m m s s op er ati on 0.1 7 5 Operation in this area is limited by RDS(on). 3 1 2 0 0.01 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 Total Gate Charge, Qg -- nC 3.5 4.0 Tc=25°C Single pulse 2 3 5 7 10 Allowable Power Dissipation, PD -- W 0.8 0.6 0.4 0.2 0 3 5 7 100 2 3 5 7 1000 IT09138 PD -- Tc 20 1.0 2 Drain-to-Source Voltage, VDS -- V IT08310 PD -- Ta 1.2 Allowable Power Dissipation, PD -- W IDP=2.8A 3 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 Forward Bias A S O 5 VDS=200V ID=0.25A 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09139 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT09140 Note on usage : Since the 2SK3850 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. PS No.8193-4/4