2SK3615 Ordering number : ENN8332 2SK3615 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V ID 12 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 48 A 1 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V 60 VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=6A 1.2 RDS(on)1 RDS(on)2 ID=6A, VGS=10V ID=6A, VGS=4V Input Capacitance Ciss Output Capacitance Coss VDS=20V, f=1MHz VDS=20V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time V(BR)DSS Conditions IDSS IGSS td(off) tf 4.8 Unit max V 1 µA ±10 µA 2.6 V 45 60 mΩ 60 85 mΩ 8 S 790 pF 115 pF VDS=20V, f=1MHz See specified Test Circuit. 88 pF 10 ns See specified Test Circuit. 40 ns See specified Test Circuit. 70 ns See specified Test Circuit. 60 ns Marking : K3615 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005PA MS IM TB-00001381 No.8332-1/4 2SK3615 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=30V, VGS=10V, ID=12A 16 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=12A 4 nC Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=12A 3.4 Diode Forward Voltage VSD IS=12A, VGS=0V 1.0 Package Dimensions unit : mm 7003-004 0.5 1.5 1.5 5.5 7.0 4 5.5 4 2.3 6.5 5.0 0.5 0.5 0.6 1 2 2.3 0.8 1 7.5 0.8 1.6 1.2 3 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2 0.6 0.5 3 2.5 0.85 0.85 0.7 1.2 2.3 6.5 5.0 V 7.0 Package Dimensions unit : mm 7518-004 nC 1.2 1 : Gate 2 : Drain 3 : Source 4 : Drain 1.2 2.3 2.3 SANYO : TP-FA SANYO : TP Switching Time Test Circuit VDD=30V 10V 0V VIN ID=6A RL=5Ω VOUT D VIN PW=10µs D.C.≤1% G P.G 50Ω S 2SK3615 ID -- VDS ID -- VGS 10 VDS=10V 3.5 4 3 1.0 2 0.5 1 0 0 --25°C 1.5 5 5°C 2.0 6 Ta= 7 2.5 7 25° C Drain Current, ID -- A 3.0 4.0V 3.5 8 VGS=3.0V V Drain Current, ID -- A 4.0 9 5.0 4.5 10V 8.0V 6 .0V V 5.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT05210 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage, VGS -- V 3.5 4.0 IT05211 No.8332-2/4 2SK3615 RDS(on) -- VGS 130 120 110 100 90 80 70 60 50 40 30 20 10 0 2 4 6 10 8 12 14 Gate-to-Source Voltage, VGS -- V 50 40 30 20 --40 --20 0 20 40 60 80 100 120 140 160 IT09342 IS -- VSD VGS=0V 3 --2 1.0 7 5 3 1.0 7 5 3 2 25° C --25° C C 5° C °C = ° 75 Ta 25 2 2 5°C 3 Source Current, IS -- A Forward Transfer Admittance, yfs -- S 60 Ambient Temperature, Ta -- °C 5 0.1 7 5 2 3 0.1 0.01 0.01 0.2 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT05214 3 2 3 tr 2 td(on) 10 7 5 1000 1.2 IT05215 Ciss 7 5 3 2 Coss Crss 100 7 2 5 3 1.0 0.1 2 3 5 7 2 1.0 5 3 Drain Current, ID -- A 0 7 10 IT05216 IDP=48A n 4 6 8 10 12 14 Total Gate Charge, Qg -- nC 16 18 20 IT09343 C) 2 0.1 0.01 Operation in this area is limited by RDS(on). 5° 1.0 7 5 2 c= (T 0 s s 3 2 3 2 1 0µ 0µ ID=12A 10 7 5 o ati er Drain Current, ID -- A ASO op 2 30 IT05217 s 1m s m 10 0ms 3 25 10 4 20 DC 5 15 10 3 2 8 6 10 <1 100 7 5 VDS=30V ID=12A 7 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 0 1.0 f=1MHz 3 9 0.8 2 Ciss, Coss, Crss -- pF td(off) tf 7 5 0.6 Ciss, Coss, Crss -- VDS 3 VDD=30V VGS=10V 100 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 5 Switching Time, SW Time -- ns 70 10 7 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4V S= G V , V 6A =10 I D= V GS , 6A I D= 80 10 --60 16 VDS=10V 7 90 IT09341 yfs -- ID 10 110 100 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 0 RDS(on) -- Ta 120 Ta=25°C ID=6A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 150 Ta=25°C Single pulse 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT09344 No.8332-3/4 2SK3615 PD -- Ta PD -- Tc 25 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.2 1.0 0.8 0.6 0.4 0.2 0 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09345 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT09346 Note on usage : Since the 2SK3615 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8332-4/4