Ordering number : ENN7552 2SJ658 P-Channel Silicon MOSFET 2SJ658 High-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. High-speed switching. 2.5V drive. unit : mm 2178 [2SJ658] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1 1.3 2 3 1 : Source 2 : Drain 3 : Gate SANYO : NP 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID Drain Current (Pulse) PW≤10µs, duty cycle≤1% --2 A --8 A Allowable Power Dissipation IDP PD 0.7 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS Conditions ID=--1mA, VGS=0 VDS=--20V, VGS=0 Ratings min typ max --20 Unit V --10 µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31504 TS IM TA-100561 No.7552-1/4 2SJ658 Continued from preceding page. Parameter Symbol Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Ratings Conditions IGSS VGS(off) VGS=±8V, VDS=0 yfs RDS(on)1 VDS=--10V, ID=--1A min VDS=--10V, ID=--1mA typ max --0.3 1.8 Unit ±10 µA --1.4 V 3 S 115 150 mΩ RDS(on)2 Ciss ID=--1A, VGS=--4V ID=--0.5A, VGS=--2.5V 145 210 mΩ VDS=--10V, f=1MHz 410 pF Output Capacitance Coss VDS=--10V, f=1MHz 60 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 40 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns Rise Time tr td(off) See specified Test Circuit. 27 ns See specified Test Circuit. 42 ns Static Drain-to-Source On-State Resistance Input Capacitance Turn-OFF Delay Time Fall Time tf Qg See specified Test Circuit. 38 ns VDS=--10V, VGS=--4V, ID=--2A 4.5 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--4V, ID=--2A 0.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--2A 1.2 Diode Forward Voltage VSD IS=--2A, VGS=0 Total Gate Charge nC --0.9 --1.2 V Switching Time Test Circuit VDD= --10V VIN 0V --4V ID= --1A RL=10Ω VIN D VOUT PW=10µs D.C.≤1% G 2SJ658 S ID -- VDS --2.5 --2.0 C °C --1.5 --1.0 --0.4 25 °C --0.5 --25 VGS= --1.0V --0.8 --3.0 75° --1.2 VDS= --10V --3.5 Drain Current, ID -- A --10V --4.0V -3.0V --1.6 ID -- VGS --4.0 --1. 8V --1 .5V --2.5V --2.0 Drain Current, ID -- A 50Ω Ta= P.G 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT02753 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Gate-to-Source Voltage, VGS -- V --1.8 --2.0 IT02754 No.7552-2/4 2SJ658 RDS(on) -- VGS 400 RDS(on) -- Ta 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 300 ID= --1.0A 250 --0.5A 200 150 100 50 --2 --4 --6 --8 --10 Gate-to-Source Voltage, VGS -- V 100 50 --40 --20 0 20 40 60 80 100 120 140 160 IT02756 IF -- VSD VGS=0 1.0 7 5 3 --1.0 7 5 3 2 --0.1 7 5 --25 °C 5°C --2 = Ta C 75° 2 2 75 25 °C °C C Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 150 3 25° 3 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A --0.01 --0.2 5 --0.6 --0.7 --0.8 --0.9 --1.0 5 tr td(on) --1.2 IT02758 Ciss 3 Ciss, Coss, Crss -- pF tf --1.1 f=1MHz 7 td(off) 10 7 5 --0.5 Ciss, Coss, Crss -- VDS 1000 3 2 3 2 --0.4 Diode Forward Voltage, VSD -- V VDD= --10V VGS= --4V 100 7 5 --0.3 IT02757 SW Time -- ID 1000 7 5 Switching Time, SW Time -- ns V = --2.5 A, V GS .5 0 -I D= = --4.0V A, V GS I D= --1.0 --10 7 5 5 0.1 --0.01 2 100 7 Coss 5 Crss 3 3 2 2 1.0 --0.1 10 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 0 --10 7 5 Drain Current, ID -- A --2 --1 3 2 0 3 Total Gate Charge, Qg -- nC 4 5 IT02761 --8 --10 --12 --14 --16 --18 --20 IT02760 ASO IDP= --8A <10µs 10 0 1m µs 10 s 10 ms 0m s 1s ID= --2A DC --1.0 7 5 op er ati 3 2 on Operation in this area is limited by RDS(on). --0.1 7 5 3 2 2 --6 2 --3 1 --4 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --2A 0 --2 IT02759 VGS -- Qg --4 Gate-to-Source Voltage, VGS -- V 200 Ambient Temperature, Ta -- °C VDS= --10V 7 250 IT02755 yfs -- ID 10 300 0 --60 0 0 350 Ta = Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 350 Ta=25°C Single pulse --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT05565 No.7552-3/4 2SJ658 PD -- Ta Allowable Power Dissipation, PD -- W 0.8 0.7 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05566 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS No.7552-4/4