Ordering number : ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2190 [2SK3449] 8.0 3.3 1.5 7.5 3.0 11.0 1.4 4.0 1.0 1.0 15.5 3.0 1.6 0.8 0.8 0.7 0.75 1 Specifications 2 1.7 2.4 SANYO : TO-126ML 4.8 Absolute Maximum Ratings at Ta=25°C Parameter 1 : Source 2 : Drain 3 : Gate 3 Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V ID 4.8 A 19.2 A Drain Current (DC) Drain Current (Pulse) IDP Allowable Power Dissipation PD PW≤10µs, duty cycle≤1% Tc=25°C 1 W 10 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 60 IDSS IGSS VGS(off) VDS=10V, ID=1mA 1.0 max Unit V 10 µA ±10 µA 2.4 V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22201 TS IM TA-2919 No.6672-1/4 2SK3449 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max yfs RDS(on)1 RDS(on)2 VDS=10V, ID=2.4A ID=2.4A, VGS=10V ID=2.4A, VGS=4V 240 320 mΩ 320 440 mΩ Input Capacitance Ciss VDS=20V, f=1MHz 110 pF Output Capacitance Coss VDS=20V, f=1MHz 35 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 10 pF Turn-ON Delay Time td(on) See specified Test Circuit 6 ns Rise Time tr td(off) See specified Test Circuit 3.2 ns See specified Test Circuit 16 ns tf See specified Test Circuit 4.8 ns Forward Transfer Admittance Static Drain-to-Source On-State Resistance Turn-OFF Delay Time Fall Time 2.2 3.2 S Total Gate Charge Qg VDS=10V, VGS=10V, ID=4.8A 4.5 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4.8A 0.9 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4.8A 0.8 Diode Forward Voltage VSD IS=4.8A, VGS=0 nC 1 1.2 V Switching Time Test Circuit VDD=30V 10V 0V VIN ID=2.4A RL=12.5Ω VIN D VOUT PW=10µs D.C.≤1% G 50Ω 2SK3449 S ID -- VDS VDS=10V 3.0 1.0 0.8 0.6 0.4 1.5 1.0 --2 5 °C 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 1.8 2.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 1.0 20 IT01214 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V 4.0 IT01213 RDS(on) -- Tc 600 Tc=25°C ID=2.4A 700 0.5 IT01212 RDS(on) -- VGS 800 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 2.0 VGS=2.5V 0.2 0 2.5 C 3.0V Drain Current, ID -- A 1.2 5.0V 4. 3.5 0V V 10.0V Drain Current, ID -- A 1.4 ID -- VGS 3.5 8.0V 25° 1.6 Tc= 75° C P.G 500 4V S= 400 VG A, 4 2. I D= 300 ,V 2.4A V =10 GS I D= 200 100 0 --60 --40 --20 0 20 40 60 80 100 Case Temperature, Tc -- °C 120 140 160 IT01215 No.6672-2/4 2SK3449 2 °C °C -25 = 25 Tc 1.0 7 75 5 °C 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.1 7 5 td (off) 3 2 tf 10 td(on) 7 5 tr 3 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 IT01217 Ciss, Coss, Crss -- VDS 1000 7 5 Ciss, Coss, Crss -- pF 5 0.4 Diode Forward Voltage, VSD -- V VDD=30V VGS=10V 7 Switching Time, SW Time -- ns 3 2 0.01 0.3 5 7 10 IT01216 SW Time -- ID 100 f=1MHz 3 2 Ciss 100 7 5 Coss 3 2 Crss 10 7 5 3 2 2 1.0 1.0 7 2 0.1 3 5 7 2 1.0 Drain Current, ID -- A 3 0 5 20 30 40 50 3 2 IT01219 ASO IDP=19.2A <10µs 10 0µ 10 Drain Current, ID -- A 8 7 6 5 4 3 7 5 C er 3 2 0 0.1 0.1 1.0 1.5 2.0 2.5 3.0 3.5 Total Gate Charge, Qg -- nC 4.0 4.5 2 3 Allowable Power Dissipation, PD -- W 0.8 0.6 0.4 0.2 io n 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 100 IT02450 PD -- Tc 12 1.0 at Tc=25°C Single pulse IT01220 PD -- Ta 1.2 op Operation in this area is limited by RDS(on). 5 s s 1.0 1 0.5 m 0m D 2 s 10 10 3 7 s 1m ID=4.8A 2 0 60 Drain-to-Source Voltage, VDS -- V VDS=10V ID=4.8A 9 10 IT02549 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 1.0 7 5 3 2 2 0.1 0.01 Allowable Power Dissipation, PD -- W 3 2 °C 25°C 3 VGS = 0 Tc= 75 5 Forward Current, IF -- A Forward Transfer Admittance, |yfs| -- S 7 IF -- VSD 10 7 5 VDS=10V --25°C |yfs| -- ID 10 10 8 6 4 2 0 0 0 20 40 60 80 100 120 Amibient Tamperature, Ta -- °C 140 160 IT02451 0 20 40 60 80 100 120 Case Tamperature, Tc -- °C 140 160 IT02452 No.6672-3/4 2SK3449 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice. PS No.6672-4/4