Ordering number:ENN6413 N-Channel Silicon MOSFET 2SK3291 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3291] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3 1.5 2 1 0.4 3.0 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Conditions Ratings Unit VDSS VGSS 60 V ±20 V ID 1.6 A IDP PW≤10µs, duty cycle≤1% 6.4 A Mounted on a ceramic board (250mm2×0.8mm) 1.3 W Allowable Power Dissipation PD 3.5 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions V(BR)DSS IDSS ID=1mA, VGS=0 VDS=60V, VGS=0 IGSS VGS(off) | yfs | VGS=±16V, VDS=0 VDS=10V, ID=1mA RDS(on)1 VDS=10V, ID=0.8A ID=0.8A, VGS=10V RDS(on)2 ID=0.8A, VGS=4V Ratings min typ max 60 V 10 µA ±10 µA 2.4 V 380 500 mΩ 500 680 mΩ 1.0 1.2 Marking : KX Unit 1.7 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60800TS (KOTO) TA-1699 No.6413–1/4 2SK3291 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss VDS=20V, f=1MHz 70 pF Output Capacitance Coss 20 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz VDS=20V, f=1MHz 5 pF Turn-ON Delay Time td(on) See specified Test Circuit 5 ns tr See specified Test Circuit 4 ns td(off) See specified Test Circuit 18 ns tf See specified Test Circuit 5 ns 3.6 nC 0.6 nC Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=1.6A Diode Forward Voltage VSD 0.5 IS=1.6A, VGS=0 nC 0.85 1.2 V Switching Time Test Circuit VDD=30V VIN 10V 0V ID=0.8A RL=37.5Ω VIN D VOUT PW=10µs D.C.≤1% G 2SK3291 P.G 50Ω S ID -- VDS 1.8 V 3.0 0.8 VGS=2.5V 0.6 2.5 2.0 1.5 75 °C --2 5°C 25°C V 4.0 3. 0V 1.0 3. 10 5V .0V 1.2 Drain Current, ID – A 8.0 1.4 Drain Current, ID – A VDS=10V 5.0V V 6.0 1.6 ID -- VGS 3.5 1.0 0.5 0.2 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS – V 1.8 1000 800 600 400 200 0 4 6 8 10 12 14 1.0 16 Gate-to-Source Voltage, VGS – V 18 20 IT01260 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS – V Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Tc=25°C ID=0.8A 2 0.5 IT01258 4.0 IT01259 RDS(on) -- Tc 1000 1200 0 0 2.0 RDS(on) -- VGS 1400 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Tc = 0.4 800 4V S= G V , 10V .8A =0 S= G ID V A, 0.8 I D= 600 400 200 0 --60 --40 --20 0 20 40 60 80 100 Case Temperature, Tc – °C 120 140 160 IT01261 No.6413–2/4 3 2 1.0 7 5 C 5° -2 =- Tc 0.1 7 5 75 °C ° 25 C 3 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 0.01 0.001 2 3 0.01 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.2 5 7 10 IT01262 Drain Current, ID – A 0.3 0.4 VDD=30V VGS=10V 5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT01263 Ciss, Coss, Crss -- VDS 1000 7 0.5 Diode Forward Voltage, VSD – V SW Time -- ID 100 f=1MHz 7 5 3 2 Ciss, Coss, Crss – pF 3 td(off) 2 tf Switching Time, SW Time – ns VGS=0 Tc= 75°C VDS=10V 3 2 IF -- VSD 10 7 5 25°C --25° C yfs -- ID 10 7 5 Forward Current, IF – A Forward Transfer Admitance, | yfs | – S 2SK3291 10 7 td(on) 5 tr 3 100 Ciss 7 5 3 Coss 2 10 7 5 Crss 3 2 2 1.0 7 2 0.1 3 2 1.0 3 1.0 5 0 8 7 3 2 Drain Current, ID – A 6 5 4 1 3 2 1.5 2.0 2.5 3.0 3.5 nt 1.0 ed on ac er 0.8 am ic bo ar 0.6 d (2 50 m 0.4 m2 ×0 .8 m m ) 0.2 0 s ms 10 0m s op era tio n Operation in this area is limited by RDS(on). Tc=25˚C 1pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage,VDS – V Allowable Power Dissipation, PD – W M ou DC 0µ s 1m 10 5 7 100 IT01267 PD -- Tc 4.0 1.3 1.2 10 IT01266 PD -- Ta 1.4 Allowable Power Dissipation, PD – W 4.0 60 IT01265 <1 0µ s ID=1.6A 0.01 0.1 0 1.0 50 IDP=6.4A 3 2 2 Total Gate Charge, Qg – nC 40 ASO 1.0 7 5 0.1 7 5 3 0.5 30 2 10 7 5 0 20 Drain-to-Source Voltage,VDS – V VDS=10V ID=1.6A 9 10 IT01264 VGS -- Qg 10 Gate-to-Source Voltage, VGS – V 7 5 Drain Current, ID – A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – °C 140 160 IT01269 0 20 40 60 80 100 120 Case Temperature, Tc – °C 140 160 IT01268 No.6413–3/4 2SK3291 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice. PS No.6413–4/4