MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N4401 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B NPN General Purpose Amplifier E TO-92 Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Min Max A E Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10mAdc, IE=0) Emitter-Base Breakdown Voltage (I E=0.1mAdc, IC=0) Base Cutoff Current (VCE=35Vdc, VBE=0.4Vdc) Collector Cutoff Current (VCE=35Vdc, VBE=0.4Vdc) 40 Vdc 60 Vdc 6.0 Vdc 0.1 µAdc 0.1 µAdc B C ON CHARACTERISTICS hFE VCE(sat) VBE(sat) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=150mAdc, VCE=1.0Vdc) (I C=500mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) 20 40 80 100 40 0.75 300 D 0.4 0.75 Vdc 0.95 1.2 Vdc SMALL-SIGNAL CHARACTERISTICS fT Ccb Ceb Current Gain-Bandwidth Product (I C=20mAdc, VCE=10Vdc, f=100MHz) Collector-Base Capacitance (VCB=5.0Vdc, IE=0, f=100kHz) Emitter-Base Capacitance (VBE=0.5Vdc, IC=0, f=100kHz) G 250 MHz DIMENSIONS 6.5 pF 30.0 pF 15 20 225 30 ns ns ns ns SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width Delay Time (VCC=30Vdc, VBE=0.2Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=30Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) ≤ 300µs, Duty Cycle ≤ 2.0% DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 www.mccsemi.com MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE MCC 2N4401 Base-Emitter ON Voltage vs Collector Current DC Current Gain vs Collector Current 360 1.2 VCE = 10V 300 VCE = 10V 1.0 240 0.8 hFE VBE(ON) - (V) TA = 25°C 180 0.6 120 0.4 TA = 125°C 60 0.2 1 100 10 0 1000 10 1 IC (mA) Collector-Emitter Saturation Volatge vs Collector Current IC/IB = 10 TA = 25°C .20 1000 Base-Emitter Saturation Voltage vs Collector Current 1.1 .24 IC/IB = 10 TA = 25°C 1.0 .16 VCE(SAT) - (V) 100 IC - (mA) 0.9 VBE(SAT) - (V) .12 0.8 .08 0.7 .04 0.6 0 1.0 100 10 0.5 1.0 1000 10 100 1000 IC - (mA) IC - (mA) Input Capacitance vs Reverse Bias Voltage Collector-Base Diode Reverse Current vs Temperature 100 40 f = 1MHz 32 VCB = 20V 10 pF ICBO - (mA) 24 16 Ceb 1.0 8 0.1 0 25 50 75 TJ - (°C) 100 125 150 0 0.1 1.0 Volts - (V) www.mccsemi.com 10 MCC 2N4401 Maximum Power Dissipation vs Ambient Temperature Output Capacitance vs Reverse Bias Voltage 800 10 f = 1MHz 8 600 TO-92 PD(MAX) - (mW) pF 400 6 4 Ccb 200 SOT-23 2 0 0 50 100 150 200 0 0.1 1.0 TA - (°C) Volts - (V) www.mccsemi.com 10