INFINEON BFR460L3

BFR460L3
NPN Silicon RF Transistor
Preliminary data
For low voltage / low current applications
3
Ideal for VCO modules and low noise amplifiers
Low noise figure: 1.1 dB at 1.8 GHz
1
World's smallest SMD leadless package
2
Excellent ESD performance (>1500V HBM)
High fT of 22 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR460L3
Marking
AB
Pin Configuration
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
4.5
Collector-emitter voltage
VCES
15
Collector-base voltage
VCBO
15
Emitter-base voltage
VEBO
1.5
Collector current
IC
50
Base current
IB
5
Total power dissipation1)2)
Ptot
200
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
V
mA
TS 108°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point3)
RthJS
210
K/W
1P due to Maximum Ratings
tot
2T is measured on the collector lead at the soldering point to the pcb
S
3For calculation of R
please refer to Application Note Thermal Resistance
thJA
1
May-14-2003
BFR460L3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
4.5
5
-
V
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
50
130
200
Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0,5 V, IC = 0
DC current gain
-
IC = 20 mA, VCE = 3 V
2
May-14-2003
BFR460L3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
16
22
-
Ccb
-
0.3
0.45
Cce
-
0.14
-
Ceb
-
0.55
-
Unit
GHz
IC = 30 mA, VCE = 3 V, f = 1 GHz
Collector-base capacitance
pF
VCB = 3 V, f = 1 MHz, emitter grounded
Collector emitter capacitance
VCE = 3 V, f = 1 MHz, base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, collector grounded
Noise figure
dB
F
IC = 5 mA, VCE = 3 V, ZS = ZSopt ,
f = 1.8 GHz
-
1.1
-
-
1.35
-
Gms
-
16.0
-
dB
Gma
-
11
-
dB
IC = 5 mA, VCE = 3 V, ZS = ZSopt ,
f = 3 GHz
Power gain, maximum stable1)
IC = 20 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Power gain, maximum available1)
IC = 20 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt , f = 3 GHz
|S21e|2
Transducer gain
dB
IC = 20 mA, VCE = 3 V, ZS = ZL = 50,
f = 1,8 GHz
-
14
-
IC = 20 mA, VCE = 3 V, ZS = ZL = 50 ,
f = 3 GHz
-
10
-
IP3
-
27
-
P-1dB
-
11.5
-
Third order intercept point at output2)
dBm
VCE = 3 V, IC = 20 mA, f = 1.8 GHz
1dB Compression point at output
IC = 20 mA, VCE = 3 V, f = 1.8 GHz
1G
1/2
ma = |S21 / S12| (k-(k²-1) ), Gms = S21 / S12 2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
3
May-14-2003
BFR460L3
Collector-base capacitance Ccb = (VCB )
Transition frequency fT = (IC)
f = 1MHz
f = 1 GHz
VCE = parameter in V
0.8
26
GHz
2 to 4V
pF
1V
22
0.6
20
fT
Ccb
18
0.5
0.4
16
14
12
0.3
10
0.2
8
6
0.1
4
0
0
2
4
6
8
10
V
2
0
14
5
10
15
20
25
30
35 mA
VCB
45
IC
Power gain Gma, Gms , |S21 |2 = (f)
Power gain Gma, Gms = (IC )
VCE = 3 V, IC = 20 mA
VCE = 3V
f = parameter in GHz
50
24
0.9
dB
40
20
35
18
30
16
1.8
14
2.4
12
3
25
G
G
dB
Gms
20
15
10
|S21|²
4
Gma
10
8
5
6
0
0
1
2
3
4
GHz
4
0
6
f
5
6
5
10
15
20
25
30
mA
40
IC
4
May-14-2003
BFR460L3
Power gain Gma, Gms = (VCE )
IC = 20 mA
f = parameter in GHz
24
dB
0.9
20
18
1.8
G
16
14
2.4
12
3
10
4
8
5
6
6
4
2
0
0.5
1
1.5
2
2.5
3
3.5
V
4.5
VCE
5
May-14-2003