BFR460L3 NPN Silicon RF Transistor Preliminary data For low voltage / low current applications 3 Ideal for VCO modules and low noise amplifiers Low noise figure: 1.1 dB at 1.8 GHz 1 World's smallest SMD leadless package 2 Excellent ESD performance (>1500V HBM) High fT of 22 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR460L3 Marking AB Pin Configuration 1=B 2=E 3=C Package TSLP-3-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 4.5 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 50 Base current IB 5 Total power dissipation1)2) Ptot 200 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS 108°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point3) RthJS 210 K/W 1P due to Maximum Ratings tot 2T is measured on the collector lead at the soldering point to the pcb S 3For calculation of R please refer to Application Note Thermal Resistance thJA 1 May-14-2003 BFR460L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 4.5 5 - V ICBO - - 100 nA IEBO - - 1 µA hFE 50 130 200 Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0,5 V, IC = 0 DC current gain - IC = 20 mA, VCE = 3 V 2 May-14-2003 BFR460L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 16 22 - Ccb - 0.3 0.45 Cce - 0.14 - Ceb - 0.55 - Unit GHz IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 3 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure dB F IC = 5 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz - 1.1 - - 1.35 - Gms - 16.0 - dB Gma - 11 - dB IC = 5 mA, VCE = 3 V, ZS = ZSopt , f = 3 GHz Power gain, maximum stable1) IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 3 GHz |S21e|2 Transducer gain dB IC = 20 mA, VCE = 3 V, ZS = ZL = 50, f = 1,8 GHz - 14 - IC = 20 mA, VCE = 3 V, ZS = ZL = 50 , f = 3 GHz - 10 - IP3 - 27 - P-1dB - 11.5 - Third order intercept point at output2) dBm VCE = 3 V, IC = 20 mA, f = 1.8 GHz 1dB Compression point at output IC = 20 mA, VCE = 3 V, f = 1.8 GHz 1G 1/2 ma = |S21 / S12| (k-(k²-1) ), Gms = S21 / S12 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 May-14-2003 BFR460L3 Collector-base capacitance Ccb = (VCB ) Transition frequency fT = (IC) f = 1MHz f = 1 GHz VCE = parameter in V 0.8 26 GHz 2 to 4V pF 1V 22 0.6 20 fT Ccb 18 0.5 0.4 16 14 12 0.3 10 0.2 8 6 0.1 4 0 0 2 4 6 8 10 V 2 0 14 5 10 15 20 25 30 35 mA VCB 45 IC Power gain Gma, Gms , |S21 |2 = (f) Power gain Gma, Gms = (IC ) VCE = 3 V, IC = 20 mA VCE = 3V f = parameter in GHz 50 24 0.9 dB 40 20 35 18 30 16 1.8 14 2.4 12 3 25 G G dB Gms 20 15 10 |S21|² 4 Gma 10 8 5 6 0 0 1 2 3 4 GHz 4 0 6 f 5 6 5 10 15 20 25 30 mA 40 IC 4 May-14-2003 BFR460L3 Power gain Gma, Gms = (VCE ) IC = 20 mA f = parameter in GHz 24 dB 0.9 20 18 1.8 G 16 14 2.4 12 3 10 4 8 5 6 6 4 2 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VCE 5 May-14-2003