INFINEON BFG193

BFG193
NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz
4
For linear broadband amplifiers
fT = 8 GHz
F = 1.3 dB at 900 MHz
3
2
1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
BFG193
BFG193
Pin Configuration
1=E
2=B
3=E
Package
4=C
SOT223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
80
Base current
IB
10
Total power dissipation
Ptot
600
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Value
Unit
V
mA
TS 87 °C 1)
Thermal Resistance
Junction - soldering point 2)
RthJS
105
K/W
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Jun-27-2001
BFG193
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
50
100
200
DC characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 30 mA, VCE = 8 V
2
Jun-27-2001
BFG193
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
6
8
-
Ccb
-
0.6
0.9
Cce
-
0.4
-
Ceb
-
2
-
AC characteristics (verified by random sampling)
Transition frequency
GHz
IC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
F
dB
IC = 10 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
-
1.3
-
f = 1.8 GHz
-
2.1
-
IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
-
15.5
-
f = 1.8 GHz
-
10
-
-
13.5
-
-
8
-
Power gain, maximum available 1)
Gma
|S21e|2
Transducer gain
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 900 MHz
f = 1.8 GHz
1G
ma
= |S21 / S12 | (k-(k2-1)1/2 )
3
Jun-27-2001
BFG193
Total power dissipation Ptot = f (TS )
700
mW
600
550
P tot
500
450
400
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120 °C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load
Ptotmax/P totDC = f (tp)
10 2
Ptotmax / PtotDC
10 3
RthJS
K/W
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -7
10
0
tp
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
Jun-27-2001
BFG193
Collector-base capacitance Ccb = f (VCB )
Transition frequency f T = f (I C)
f = 1MHz
V CE = Parameter
1.3
9.0
pF
GHz
10V
1.1
1.0
7.0
fT
Ccb
5V
0.9
0.8
6.0
3V
5.0
0.7
0.6
4.0
2V
0.5
3.0
0.4
1V
0.3
2.0
0.7V
0.2
1.0
0.1
0.0
0
4
8
12
16
V
0.0
0
22
10
20
30
40
50
60
VCB
70 mA
90
IC
Power Gain Gma , Gms = f(IC )
Power Gain Gma, Gms = f(I C)
f = 0.9GHz
f = 1.8GHz
VCE = Parameter
VCE = Parameter
20
12
10V
dB
dB
10V
16
3V
5V
8
3V
14
G
G
5V
2V
12
2V
6
10
4
8
1V
1V
2
6
0.7V
0.7V
4
0
10
20
30
40
50
60
70 mA
0
0
90
IC
10
20
30
40
50
60
70 mA
90
IC
5
Jun-27-2001
BFG193
Power Gain Gma , Gms = f(VCE):_____
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
|S21|2 = f(VCE):---------
VCE = Parameter, f = 900MHz
f = Parameter
35
18
IC=30mA
0.9GHz
8V
dB
0.9GHz
dBm
14
12
IP 3
5V
G
1.8GHz
25
3V
10
1.8GHz
2V
8
20
6
4
15
1V
2
0
0
2
4
6
V
8
10
0
12
10
20
30
40
50
60
VCE
mA
80
IC
Power Gain |S21|2= f(f)
Power Gain Gma , Gms = f(f)
V CE = Parameter
VCE = Parameter
35
32
IC=30mA
dB
IC =30mA
dB
26
25
G
S21
22
18
20
14
15
10
10
10V
6
10V
2V
1V
5
2V
2
0.7V
1V
0.7V
0
0.0
0.5
1.0
1.5
2.0
2.5
GHz
-2
0.0
3.5
f
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
6
Jun-27-2001