BFG193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz 4 For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFG193 BFG193 Pin Configuration 1=E 2=B 3=E Package 4=C SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 10 Total power dissipation Ptot 600 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA TS 87 °C 1) Thermal Resistance Junction - soldering point 2) RthJS 105 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jun-27-2001 BFG193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 50 100 200 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 30 mA, VCE = 8 V 2 Jun-27-2001 BFG193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 6 8 - Ccb - 0.6 0.9 Cce - 0.4 - Ceb - 2 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure F dB IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 1.3 - f = 1.8 GHz - 2.1 - IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 15.5 - f = 1.8 GHz - 10 - - 13.5 - - 8 - Power gain, maximum available 1) Gma |S21e|2 Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Jun-27-2001 BFG193 Total power dissipation Ptot = f (TS ) 700 mW 600 550 P tot 500 450 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Jun-27-2001 BFG193 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 1.3 9.0 pF GHz 10V 1.1 1.0 7.0 fT Ccb 5V 0.9 0.8 6.0 3V 5.0 0.7 0.6 4.0 2V 0.5 3.0 0.4 1V 0.3 2.0 0.7V 0.2 1.0 0.1 0.0 0 4 8 12 16 V 0.0 0 22 10 20 30 40 50 60 VCB 70 mA 90 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 20 12 10V dB dB 10V 16 3V 5V 8 3V 14 G G 5V 2V 12 2V 6 10 4 8 1V 1V 2 6 0.7V 0.7V 4 0 10 20 30 40 50 60 70 mA 0 0 90 IC 10 20 30 40 50 60 70 mA 90 IC 5 Jun-27-2001 BFG193 Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 35 18 IC=30mA 0.9GHz 8V dB 0.9GHz dBm 14 12 IP 3 5V G 1.8GHz 25 3V 10 1.8GHz 2V 8 20 6 4 15 1V 2 0 0 2 4 6 V 8 10 0 12 10 20 30 40 50 60 VCE mA 80 IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 35 32 IC=30mA dB IC =30mA dB 26 25 G S21 22 18 20 14 15 10 10 10V 6 10V 2V 1V 5 2V 2 0.7V 1V 0.7V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz -2 0.0 3.5 f 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 6 Jun-27-2001