BFG196 NPN Silicon RF Transistor For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 3 Power amplifier for DECT and PCN Systems 2 fT = 7.5 GHz 1 VPS05163 F = 1.5 dB at 900 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFG196 BFG196 Pin Configuration 1=E 2=B 3=E Package 4=C SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 100 Base current IB 12 Total power dissipation Ptot 800 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA TS 90 °C 1) Thermal Resistance Junction - soldering point 2) RthJS 75 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jun-27-2001 BFG196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 50 100 200 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 50 mA, VCE = 8 V 2 Jun-27-2001 BFG196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 5 7.5 - Ccb - 0.97 1.4 Cce - 0.4 - Ceb - 4 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure F dB IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 1.5 - f = 1.8 GHz - 2.5 - IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 14 - f = 1.8 GHz - 8.5 - - 11.5 - - 6 - Power gain, maximum available 1) Gma |S21e|2 Transducer gain IC = 50 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Jun-27-2001 BFG196 Total power dissipation Ptot = f (TS ) 900 mW P tot 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 2 RthJS K/W 10 1 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Jun-27-2001 BFG196 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 9 1.9 pF GHz 10V 1.6 5V 7 3V 6 1.2 5 1.0 4 0.8 1V 3 0.6 0.7V 0.4 2 0.2 1 0.0 0 2V fT Ccb 1.4 4 8 12 16 V 0 0 22 20 40 60 80 mA VCB IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 15 10 10V dB 5V dB 5V 3V 13 3V 2V 8 12 2V G G 120 11 10 7 6 1V 9 5 1V 8 4 7 0.7V 3 6 5 0 0.7V 20 40 60 80 mA 2 0 120 IC 20 40 60 80 mA 120 IC 5 Jun-27-2001 BFG196 Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 16 42 IC=50mA dBm 0.9GHz dB 8V 38 36 0.9GHz 5V 12 IP 3 G 34 10 1.8GHz 32 30 8 3V 28 26 1.8GHz 6 24 2V 22 4 20 18 2 1V 16 0 0 2 4 6 V 8 14 0 12 20 40 60 80 VCE 120 IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 32 dB mA 30 IC =50mA IC=50mA dB 26 24 S21 20 G 22 20 15 18 16 10 14 12 5 10 8 10V 6 1V 4 0.7V 2 0.0 0.5 1.0 1.5 2.0 2.5 GHz 10V 1V 0 0.7V -5 0.0 3.5 f 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 6 Jun-27-2001