BFS480 NPN Silicon RF Transistor 4 For low noise, low-power amplifiersin mobile 5 6 communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m f T = 7 GHz 2 F = 1.5 dB at 900 MHz 1 Two (galvanic) internal isolated Transistors in one package 3 VPS05604 C1 E2 B2 6 5 4 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFS480 REs Pin Configuration Package 1=B 2=E 3=C 4=B 5=E 6=C SOT363 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 8 Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 10 Base current IB 1.2 Total power dissipation Ptot 80 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS 112 °C 1) Thermal Resistance Junction - soldering point2) RthJS 470 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jun-27-2001 BFS480 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CEO 8 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 30 100 200 DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 3 mA, VCE = 5 V 2 Jun-27-2001 BFS480 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 5 7.5 - Ccb - 0.23 0.4 Cce - 0.1 - Ceb - 0.23 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 1.5 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz - 1.5 - f = 1.8 GHz - 2 - IC = 3 mA, VCE = 5 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz - 18 - f = 1.8 GHz - 14 - IC = 3 mA, VCE = 5 V, ZS = ZL = 50 , f = 900 MHz - 14 - f = 1.8 GHz - 9.5 - Power gain, maximum stable 1) Gms |S21e|2 Transducer gain 1G ms = |S21 / S12 | 3 Jun-27-2001 BFS480 Total power dissipation Ptot = f (TS ) 100 mW P tot 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Jun-27-2001 BFS480 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 10 0.40 GHz pF 8 5V 7 3V fT Ccb 0.30 10V 0.25 2V 6 0.20 5 0.15 1V 4 0.7V 0.10 3 0.05 0.00 0 2 2 4 6 8 V 1 0 12 2 4 6 8 mA VCB 12 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 15 22 dB dB 8V 2V 8V 13 3V 18 G G 12 16 1V 2V 11 10 14 1V 9 0.7V 8 12 0.7V 7 10 6 8 0 2 4 6 8 mA 5 0 12 IC 2 4 6 8 mA 12 IC 5 Jun-27-2001 BFS480 Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 20 22 IC=3mA 0.9GHz dB dBm 16 14 0.9GHz 3V 2V 1.8GHz IP 3 G 14 8V 5V 12 10 6 1.8GHz 1V 10 2 8 -2 6 -6 4 -10 2 0 0 1 2 3 4 5 6 7 8 V -14 0 10 2 4 6 8 VCE 11 IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 30 dB mA 20 IC =3mA IC=3mA dB 26 24 16 G G 22 14 20 18 12 16 10 14 12 8 10 8V 1V 8 6 0.0 8V 1V 6 0.7V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz 4 0.0 3.5 f 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 6 Jun-27-2001