BFS360L6 NPN Silicon RF Transistor 4 Preliminary data Low voltage/ Low current operation 3 5 For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 Low noise figure: 1.0 dB at 1.8 GHz 6 T R 1 5 T R 2 4 P-TSLP-6-1 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFS360L6 Marking Pin Configuration Package FB 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation1) Ptot 210 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS 102°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 230 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jan-30-2003 BFS360L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 6 9 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 1 µA hFE 60 100 200 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 0 , VBE = 15 V Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain- - IC = 15 mA, VCE = 3 V 2 Jan-30-2003 BFS360L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT Unit - 14 - GHz Ccb - 0.3 - pF Cce - 0.15 - Ceb - 0.45 - Fmin - 1 - - 13.5 - - 9.5 - I C = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure dB I C = 3 mA, V CE = 3 V, ZS = Z Sopt, f = 1.8 GHz Power gain, maximum available 1) Gma I C = 15 mA, VCE = 3 V, Z S = Z Sopt, Z L = ZLopt, f = 1.8 GHz I C = 15 mA, VCE = 3 V, Z S = Z Sopt, Z L = ZLopt, f = 3 GHz |S21e|2 Transducer gain dB I C = 15 mA, VCE = 3 V, Z S = Z L = 50 , f = 1.8 GHz - 12 - I C = 15 mA, VCE = 3 V, Z S = Z L = 50 , f = 3 GHz - 8 - IP3 - 24 - P-1dB - tbd - Third order intercept point at output 2) dBm VCE = 3 V, IC = 15 mA, f = 1.8 GHz, Z S = ZL = 50 1dB Compression point at output 3) I C = 15 mA, VCE = 3 V, Z S = Z L = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e | (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3DC current at no input power 3 Jan-30-2003