BF772 NPN Silicon RF Transistor 3 For application in TV-sat tuners 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF772 RAs Pin Configuration 1=C 2=E 3=B Package 4=E SOT143 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 10 Total power dissipation Ptot 580 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA TS 72 °C 1) Thermal Resistance Junction - soldering point 2) RthJS 135 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jun-27-2001 BF772 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 50 100 200 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 30 mA, VCE = 8 V 2 Jun-27-2001 BF772 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 6 8 - Ccb - 0.6 0.9 Cce - 0.25 - Ceb - 1.8 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure F dB IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 1.3 - f = 1.8 GHz - 2.1 - IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 17.5 - f = 1.8 GHz - 11.5 - - 14.5 - - 8.5 - Power gain, maximum available 1) Gma |S21e|2 Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Jun-27-2001