INFINEON BF772

BF772
NPN Silicon RF Transistor
3
For application in TV-sat tuners
4
2
1
VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
BF772
RAs
Pin Configuration
1=C
2=E
3=B
Package
4=E
SOT143
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
80
Base current
IB
10
Total power dissipation
Ptot
580
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Value
Unit
V
mA
TS 72 °C 1)
Thermal Resistance
Junction - soldering point 2)
RthJS
135
K/W
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Jun-27-2001
BF772
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
50
100
200
DC characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 30 mA, VCE = 8 V
2
Jun-27-2001
BF772
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
6
8
-
Ccb
-
0.6
0.9
Cce
-
0.25
-
Ceb
-
1.8
-
AC characteristics (verified by random sampling)
Transition frequency
GHz
IC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
F
dB
IC = 10 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
-
1.3
-
f = 1.8 GHz
-
2.1
-
IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
-
17.5
-
f = 1.8 GHz
-
11.5
-
-
14.5
-
-
8.5
-
Power gain, maximum available 1)
Gma
|S21e|2
Transducer gain
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 900 MHz
f = 1.8 GHz
1G
ma
= |S21 / S12 | (k-(k2-1)1/2 )
3
Jun-27-2001