FJX945 FJX945 Audio Frequency Amplifier High Frequency OSC. 3 • Collector-Base Voltage VCBO=60V • High Current Gain Bandwidth Product fT=300MHz (Typ) • Complement to FJX733 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO VEBO Collector-Emitter Voltage 50 V Emitter-Base Voltage 5 IC V Collector Current 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 60 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 50 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 ICBO Collector Cut-off Current VCB=40V, IE=0 IEBO Emitter Cut-off Current VEB=3V, IC=0 hFE DC Current Gain VCE=6V, IC=1.0mA Typ. Max. Units V V V 40 0.1 µA 0.1 µA 700 VCE (sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.15 fT Current Gain Bandwidth Product VCE=6V, IC=10mA 300 0.3 MHz V Cob Output Capacitance VCB=6V, IE=0 f=1MHz 2.5 pF NF Noise Figure VCE=6V, IE= -0.5mA f=1KHz, RS=500Ω 4.0 dB hFE Classification Classification R O Y G L hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 Marking SAX Grade ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 FJX945 Typical Characteristics 100 100 VCE = 6V IB = 350µA 80 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT IB = 400µA IB = 300µA IB = 250µA 60 IB = 200µA IB = 150µA 40 IB = 100µA 20 IB = 50µA 0 0 2 4 6 8 10 12 14 16 18 10 1 0.1 0.0 20 Figure 1. Static Characteristic VBE(sat), V CE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 6V 100 10 100 1000 VBE(sat) 1 0.1 VCE(sat) 0.01 10 100 1000 IC[mA], COLLECTOR CURRENT f = 1MHz 10 1 0.1 100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT IE = 0 Cob [pF], CAPACITANCE 1.2 Figure 4. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 100 ©2002 Fairchild Semiconductor Corporation 1.0 IC = 10 IB IC[mA], COLLECTOR CURRENT 10 0.8 10 1 Figure 3. DC current Gain 1 0.6 Figure 2. Transfer Characteristic 1000 1 0.4 VBE[V], BASE-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE 10 0.2 1000 VCE = 6V 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A2, August 2002 FJX945 Package Dimensions SOT-323 2.00±0.20 3° 1.25±0.10 2.10±0.10 0.95±0.15 0.90 ±0.10 +0.05 0.05 –0.02 1.00±0.10 1.30±0.10 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1