2SC4463 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4463 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 20 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 3 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 µA VCB = 10 V, IE = 0 Collector to emitter saturation voltage VCE(sat) — — 1.0 V I C = 20 mA, IB = 4 mA DC current transfer ratio hFE 60 120 — Gain bandwidth product fT 600 1000 — MHz VCE = 10 V, IC = 10 mA Reverse transfer capacitance Cre — 0.35 0.65 pF VCB = 10 V, IE = 0, emitter common, f = 1 MHz Conversion gain CG — 21 — dB VCC = 12 V, IC = 2 mA, f = 200 MHz Noise figure NF — 4.0 — dB f OSC = 230 Mhz (0 dBm), f out = 30 MHz Note: Marking is “HC”. 2 VCE = 10 V, IC = 10 mA 2SC4463 DC Current Transfer Ratio vs. Collector Current 200 150 DC Current Transfer Ratio hFE Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 100 50 VCE = 10 V 160 120 80 40 0 0 1 50 100 150 Ambient Temperature Ta (°C) Reverse Transfer Capacitance Cre (pF) Gain Bandwidth Product fT (MHz) 2,000 VCE = 10 V 1,200 800 400 0 1 2 5 10 20 Collector Current IC (mA) 50 Reverse Transfer Capacitance vs. Collector to Base Voltage Gain Bandwidth Product vs. Collector Current 1,600 2 5 10 20 Collector Current IC (mA) 50 5.0 IE = 0 f = 1 MHz Emitter Common 2.0 1.0 0.5 0.2 0.1 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 3 2SC4463 Noise Figure vs. Collector Current 10 20 8 15 10 5 0 Noise Figure NF (dB) Conversion Gain CG (dB) Conversion Gain vs. Collector Current 25 VCC = 12 V f = 200 MHz fosc = 230 MHz (0 dBm) fout = 30 MHz Rg = 50 Ω 2 4 6 8 Collector Current IC (mA) 6 2 0 10 VCC = 12 V f = 200 MHz fosc = 230 MHz (0 dBm) fout = 30 MHz Rg = 50 Ω 4 1 2 3 4 Collector Current IC (mA) Conversion Gain, noise figure vs. Oscillating Injection Voltage 10 CG 20 8 15 6 10 5 VCC = 12 V IC = 2 mA f = 200 MHz fosc = 230 MHz fout = 30 MHz Rg = 50 Ω NF 4 2 0 0 –8 –6 –4 –2 0 2 Oscillating Injection Voltage VOSC (dBm) 4 Noise Figure NF (dB) Conversion Gain CG (dB) 25 5 2SC4463 Conversion Gain, Noise Figure Test Circuit fosc = 230 MHz (0 dBm) 2200 p 1.5 p VCC 560 L2 Ferrite Bead 56 p f= 200 MHz L4 27 p fout = 230 MHz RL = 50 Ω D.U.T. L1 4.2 p L3 330 2200 p 18 p 80 p 2200 p Unit R : Ω C:F VBB L1 : φ0.5 mm Enameled Copper Wire 4 Turns Inside Dia φ5 mm L2 : φ0.5 mm Enameled Copper Wire 4 Turns Inside Dia φ4 mm L3 : φ0.2 mm Enameled Copper Wire 6 Turns Inside Dia φ3 mm L4 : φ0.2 mm Enameled Copper Wire 16 Turns, Inside Dia φ0.5 mm, Using Ferrite Bead 5 0.1 0.3 +– 0.05 0.2 0.65 0.65 1.3 ± 0.2 0.9 ± 0.1 0.1 0.3 +– 0.05 0.1 0.16 +– 0.06 0 – 0.1 0.425 1.25 ± 0.1 0.1 0.3 +– 0.05 2.1 ± 0.3 2.0 ± 0.2 0.425 Unit: mm Hitachi Code JEDEC EIAJ Weight (reference value) CMPAK — Conforms 0.006 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.