HITACHI 2SC2734

2SC2734
Silicon NPN Epitaxial
Application
• UHF frequency converter
• Local oscillator, wide band amplifier
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC2734
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
20
V
Collector to emitter voltage
VCEO
11
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
20
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
11
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
3
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
µA
VCB = 10 V, IE = 0
Collector to emitter saturation
voltage
VCE(sat)
—
—
0.7
V
I C = 10 mA, IB = 5 mA
DC current transfer ratio
hFE
20
90
200
Gain bandwidth product
fT
1.4
3.5
—
GHz
VCE = 10 V, IC = 10 mA
Collector output capacitance
Cob
—
0.9
1.5
pF
VCB = 10 V, IE = 0, f = 1 MHz
Conversion gain
CG
—
15
—
dB
VCC = 6 V, IC = 2 mA,
f = 900 MHz,
f OSC = 930 MHz (0dBm),
f out = 30 MHz
Noise figure
NF
—
9
—
dB
VCC = 6 V, IC = 2 mA,
f = 900 MHz,
f OSC = 930 MHz (0dBm),
f out = 30 MHz
Oscillating output voltage
VOSC
—
140
—
mV
VCC = 6 V, IC = 5 mA,
f = 930 MHz
Note: Marking is “GC”.
2
VCE = 10 V, IC = 5 mA
2SC2734
DC Current Transfer Ratio vs.
Collector Current
200
150
DC Current Transfer Ratio hFE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
100
50
VCE = 10 V
160
120
80
40
0
0
1
50
100
150
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
Collector Current
3
2
1
0
50
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product fT (GHz)
VCE = 10 V
4
2
5
10
20
Collector Current IC (mA)
50
Collector Output Capacitance vs.
Collector to Base Voltage
5
1
2
5
10
20
Collector Current IC (mA)
2.0
f = 1 MHz
IE = 0
1.6
1.2
0.8
0.4
0
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
3
2SC2734
Reverse Transfer Capacitance vs.
Collector to Base Voltage
Conversion Gain vs. Collector Current
20
f = 1 MHz
Emitter Common
1.6
1.2
0.8
0.4
Conversion Gain CG (dB)
Reverse Transfer Capacitance Cre (pF)
2.0
16
12
8
4
0
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
0
Oscillating Output Voltage VOSC (mV)
Noise Figure NF (dB)
16
12
4
0
10
200
20
8
2
4
6
8
Collector Current IC (mA)
Oscillating Output Voltage vs.
Collector Current
Noise Figure vs. Collector Current
4
VCC = 6 V
f = 900 MHz
fosc = 930 MHz
(0 dBm)
fout = 30 MHz
VCC = 6 V
f = 900 MHz
fosc = 930 MHz
(0 dBm)
fout = 30 MHz
1
2
3
4
Collector Current IC (mA)
5
160
120
80
40
0
VCC = 6 V
f = 930 MHz
2
4
6
8
Collector Current IC (mA)
10
2SC2734
2nd I.M. Distortion vs. Collector Current
50
200
2nd I.M. Distortion 2nd I.M.D. (dB)
Oscillating Output Voltage VOSC (mV)
Oscillating Output Voltage vs.
Supply Voltage
160
120
80
40
0
IC = 5 mA
f = 930 MHz
2
4
6
8
Supply Voltage VCC (V)
40
30
20
10
0
10
VCC = 10 V
f1 = 600 MHz
f2 = 650 MHz
f2nd IM = 1,250 MHz
Vout = 103 dBµ
4
8
12
16
Collector Current IC (mA)
20
3rd I.M. Distortion vs. Collector Current
f = 700 MHz
Power Gain vs. Frequency
60
12
550 MHz
Power Gain PG (dB)
3rd I.M. Distortion 3rd I.M.D. (dB)
70
50
VCC = 10 V
f1 = 600 MHz
f2 = 650 MHz
f3rd IM = 550 MHz
700 MHz
Vout = 103 dBµ
40
30
20
0
4
8
12
16
Collector Current IC (mA)
20
8
4
VCC = 10 V
IC = 10 mA
Pin = –30 dBm
0
–4
400
500
600
700
800
900
Frequency fT (MHz)
1,000
5
2SC2734
Conversion Gain, Noise Figure Test Curcuit
1k
VBB
C3
C2
fosc = 930 MHz
(0 dBm)
200 µ
L5
80 p
fout = 30 MHz
RL = 50 Ω
L6
L4
L3
L1
*
D.U.T.
8p
12 p
200 p
L2
0.047 µ
100
* ···· Disk Capacitor
Unit R : Ω
C: F
L:H
23
L1 : φ1 mm Enameled Copper wire
90°
120°
L3 : φ1 mm Enameled Copper wire
7
L2 : φ1 mm Enameled Copper wire
7
22
13
130°
90°
20
90°
13
3
130°
L4 : φ1 mm Enameled Copper wire
7
4
11
11
90° 90°
L5 : Bobbin φ5 mm inside dia, φ0.2 mm 20 Turns Enameled Copper wire
L6 : φ0.5 mm Enameled Copper wire 1 Turn inside dia φ6 mm
C1 : 20 pF max. Air Trimmer Condenser
C2, C3 : 1000 pF Air Core Capacitor
6
Unit : mm
VCC
2SC2734
VOSC Test Circuit
L3
1000 p
VCC
470
Ferrite Bead
1.2 p
330
L1
D.U.T.
1,000 p
VT
9p
L2
2,200 p
120 k
6.8 k
VOSC Output
1SV70
Unit C : F
R:Ω
VBB
26
L1 : φ1 mm Enameled Copper wire
8
L2 : φ0.8 mm Enameled Copper wire
5
10
L3 : φ0.3 mm Enameled Copper wire, 10 Turns with 470 Ω Resistor
7
2SC2734
Circuit Example-UHF Wide Bandwidth Amplifier (f = 500 MHz to 950 MHz)
92
Input
3p
Rg = 50 Ω
2p
2p
D.U.T.
1.5 p
Output
RL = 50 Ω
L3
L1
L2
5.6 k
1,000 p
1,000 p
L5
L1 : φ0.5 mm Copper wire 5 Turns inside dia φ3 mm
L2 : φ0.5 mm Copper wire 2 Turns inside dia φ2 mm
L3 : φ0.5 mm Copper wire 2 Turns inside dia φ2 mm
L4 : φ0.5 mm Copper wire 1.5 Turns inside dia φ2 mm
L5 : φ0.5 mm Copper wire 4 Turns inside dia φ2 mm
L6 : φ0.5 mm Copper wire 3 Turns inside dia φ2 mm
L6
1.2 p
Unit R : Ω
C: F
1,000 p
VBB
8
3p
VCC
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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