HITACHI 2SC4416

2SC4416
Silicon NPN Epitaxial
Application
UHF Frequency conversion, Wide band amplifier
Outline
MPAK
3
1
2
1. Base
2. Emitter
3. Collector
2SC4416
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
25
V
Collector to emitter voltage
VCEO
13
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
25
—
—
V
I C = 10 µA, IE = 0
Collector cutoff current
I CBO
—
—
0.1
µA
VCB = 15 V, IE = 0
I CEO
—
—
10
µA
VCB = 13 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
0.3
µA
VEB = 3 V, IC = 0
Collector to emitter saturation
voltage
VCE(sat)
—
—
0.3
V
I C = 20 mA, IB = 4 mA
DC current transfer ratio
hFE
50
—
180
Collector output capacitance
Cob
—
0.85
1.3
pF
VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
3.0
3.8
—
GHz
VCE = 5 V, IC = 20 mA
Conversion gain
CG
15
19
—
dB
VCC = 5 V, IC = 0.8 mA,
f in = 900 MHz,
f OSC = 930 MHz (–5dBm),
f out = 30 MHz
Noise figure
NF
—
8
1.2
dB
Note: Marking is “XB–”.
2
VCE = 5 V, IC = 5 mA
2SC4416
DC Current Transfer Ratio vs.
Collector Current
200
150
DC Current Transfer Ratio hFE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
100
50
VCE = 5 V
160
120
80
40
0
0
1
50
100
150
Ambient Temperature Ta (°C)
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product fT (GHz)
5
VCE = 5 V
4
3
2
1
0
2
5
10
20
Collector Current IC (mA)
50
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
1
2
5
10
20
Collector Current IC (mA)
50
1.2
IE = 0
f = 1 MHz
1.1
1.0
0.9
0.8
0.7
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
3
2SC4416
Conversion Gain and Noise Figure
vs. Collector Current
Conversion Gain and Noise Figure
vs. Supply Voltage
25
25
VCC = 3 V
f = 900 MHz
CG
20
15
10
NF
5
fout = 30 MHz
fosc = 930 MHz(–5 dBm)
0
1
2
5
Supply Voltage VCC (V)
10
Conversion Gain CG (dB)
Noise Figure NF (dB)
Conversion Gain CG (dB)
Noise Figure NF (dB)
IC = 0.8 mA
f = 900 MHz
15
NF
10
5
fout = 30 MHz
fosc = 930 MHz(–5 dBm)
0
0.1
0.2
0.5
1.0
2
Collector Current IC (mA)
Conversion Gain and Noise Figure
vs. Collector Current
25
Conversion Gain CG (dB)
Noise Figure NF (dB)
VCC = 5 V
f = 900 MHz
15
NF
5
fout = 30 MHz
fosc = 930 MHz(–5 dBm)
0
0.1
4
CG
20
10
CG
20
0.2
0.5
1.0
2
Collector Current IC (mA)
5
5
2SC4416
S Parameters (Emitter Common)
Test Condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz STEP) , ZO = 50 Ω
IC = 5 mA
IC = 10 mA
S11-Frequency
0.8
1
S21-Frequency
90°
1.5
0.6
Scale : 2.5/div
60°
120°
2
0.4
3
150°
4
5
0.2
30°
10
0.2
0
0.4 0.6 0.8 1
1.5 2
3 4 5
10
∞
–180°
0°
–10
–0.2
–5
–4
–3
–30°
–150°
–0.4
–2
–0.6
–0.8
–1
–90°
S22-Frequency
S12-Frequency
90°
120°
–60°
–120°
–1.5
0.8
Scale : 0.4/div
60°
1
0.6
1.5
2
0.4
3
150°
30°
4
5
0.2
10
0.2
0° 0
–180°
0.4 0.6 0.8 1
1.5 2
3 4 5
10
∞
–10
–0.2
–5
–4
–3
–30°
–150°
–0.4
–2
–60°
–120°
–90°
–0.6
–0.8
–1
–1.5
5
2SC4416
S Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Ω
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.777
–47.6
12.318
146.4
0.037
66.8
0.878
–20.1
200
0.636
–82.6
9.212
124.5
0.058
55.3
0.702
–30.7
300
0.540
–107.9
6.901
110.6
0.071
51.0
0.586
–34.8
400
0.494
–125.0
5.480
101.6
0.079
50.7
0.520
–36.4
500
0.468
–138.0
4.547
94.5
0.087
52.0
0.480
–37.2
600
0.452
–147.7
3.859
89.0
0.095
53.7
0.452
–38.4
700
0.439
–155.4
3.374
84.2
0.103
55.7
0.436
–39.9
800
0.437
–162.0
2.982
80.0
0.112
57.5
0.427
–41.3
900
0.428
–167.9
2.691
76.1
0.122
59.6
0.419
–43.4
1000
0.429
–173.8
2.457
72.5
0.131
61.2
0.415
–45.0
Test Condition VCE = 5 V, IC = 10 mA, ZO = 50 Ω
Freq.
S11
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.627
–64.8
17.938
135.2
0.032
63.2
0.766
–27.4
200
0.492
–102.5
11.621
113.8
0.047
56.4
0.560
–35.3
300
0.432
–125.3
8.190
102.4
0.058
57.2
0.460
–36.1
400
0.411
–139.4
6.332
95.1
0.069
59.6
0.412
–36.2
500
0.395
–150.3
5.168
89.5
0.079
61.7
0.385
–36.2
600
0.394
–157.4
4.350
84.8
0.090
63.7
0.366
–36.8
700
0.392
–163.5
3.784
80.9
0.102
65.2
0.356
–38.3
800
0.390
–168.7
3.333
77.1
0.113
66.5
0.351
–39.7
900
0.388
–173.1
2.995
73.8
0.127
67.3
0.347
–41.6
1000
0.387
–177.0
2.731
70.5
0.138
67.9
0.345
–43.5
6
S21
S12
S22
2SC4416
Y Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA
Freq.
Yie (mS)
Yfe (mS)
Yre (mS)
Yoe (mS)
(MHz)
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
100
2.182
5.286
149.226
–28.448
–0.004
–0.459
0.069
0.745
200
4.596
9.838
138.489
–53.561
–0.005
–0.941
0.137
1.465
300
8.314
13.395
121.525
–74.164
–0.025
–1.460
0.086
2.251
400
12.329
15.566
103.171
–87.811
–0.044
–1.955
0.111
3.025
500
16.310
16.548
83.990
–97.188
–0.068
–2.451
0.080
3.813
600
19.817
16.562
66.015
–100.594
–0.104
–2.958
0.154
4.618
700
22.727
15.707
49.791
–101.015
–0.136
–3.433
0.226
5.461
800
25.355
14.778
36.105
–98.928
–0.165
–3.943
0.246
6.241
900
27.058
13.073
23.869
–95.428
–0.192
–4.438
0.307
7.067
1000
28.966
11.370
13.481
–92.170
–0.260
–4.944
0.328
7.902
Test Condition VCE = 5 V, IC = 10 mA
Freq.
Yie (mS)
Yfe (mS)
Yre (mS)
Yoe (mS)
(MHz)
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
100
4.137
6.218
246.938
–82.680
–0.004
–0.462
0.139
0.754
200
7.995
10.306
193.805
–128.092
–0.015
–0.937
0.220
1.578
300
12.296
12.125
140.844
–144.955
–0.027
–1.432
0.322
2.338
400
15.691
12.521
100.830
–145.272
–0.024
–1.913
0.404
3.028
500
18.471
12.026
70.237
–139.959
–0.049
–2.396
0.410
3.817
600
20.418
11.618
48.828
–130.672
–0.032
–2.894
0.492
4.460
700
21.855
10.887
33.158
–121.649
–0.024
–3.394
0.474
5.196
800
23.059
10.127
20.494
–112.454
–0.017
–3.889
0.502
5.950
900
23.687
9.375
11.528
–103.839
–0.013
–4.418
0.446
6.699
1000
24.366
8.807
4.277
–96.921
–0.013
–4.905
0.471
7.486
7
2SC4416
Conversion Gain and Noise Figure Test Circuit
fosc = 930 MHz
(–5 dBm)
VTin
VBB
1k
2.2 n
VCC
2.2 n
2.2 n
220 µ
1k
fout = 30 MHz
R
100 p 100 p L = 50 Ω
L1
L2
8p
2.2 n
L3
D1
47 p
100
D1
47 k
Unit R : Ω
C: F
L: H
2.2 n
fin = 900 MHz
VTout
,
,
25
10
L1 : φ1 mm Enameled Copper Wire.
10
D1 : 1SV188
25
10
10
L2 : φ1 mm Enameled Copper Wire.
15
10
L3 : φ1 mm Enameled Copper Wire.
10
30
Unit : mm
L4 : Inside Dia 3 mm, φ0.5 mm Enameled Copper Wire 1 Turn.
L5 : Inside Dia 5 mm Bobin, φ0.2 mm Enameled Copper Wire 20 Turns Using Ferrite Core.
8
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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