HITACHI 2SC4592

2SC4592
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Outline
MPAK-4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
2SC4592
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
9
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
15
—
—
V
I C = 10 µA, IE = 0
Collector cutoff current
I CBO
—
—
1
µA
VCB = 12 V, IE = 0
I CEO
—
—
1
mA
VCE = 9 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
40
120
250
Collector output capacitance
Cob
—
0.8
1.5
pF
VCB = 5 V, IE = 0,
f = 1MHz
Gain bandwidth product
fT
7.0
9.5
—
GHz
VCE = 5 V, IC = 20 mA
Power gain
PG
11.0
14.0
—
dB
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.2
2.5
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
Note: Marking is “XN–”.
2
VCE = 5 V, IC = 20 mA
2SC4592
DC Current Transfer Ratio
vs. Collector Current
200
150
DC Current Transfer Ratio hFE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
100
50
VCE = 5 V
160
120
80
40
0
1
50
100
150
Ambient Temperature Ta (°C)
0
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product fT (GHz)
12.5
VCE = 5 V
7.5
5.0
2.5
0
1
5
10
20
2
Collector Current IC (mA)
50
Collector Output Capacitance
vs. Collector to Base Voltage
Gain Bandwidth Product
vs. Collector Current
10.0
5
10
20
2
Collector Current IC (mA)
50
1.1
IE = 0
f = 1 MHz
1.0
0.9
0.8
0.7
0.6
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
3
2SC4592
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
5
VCE = 5 V
f = 900 MHz
16
Noise Figure NF (dB)
Power Gain PG (dB)
20
12
8
4
0
3
2
1
0
1
4
VCE = 5 V
f = 900 MHz
4
2
5
10
20
Collector Current IC (mA)
50
1
2
5
10
20
Collector Current IC (mA)
50
2SC4592
S11-Parameter vs. Frequency
0.6
0.8
1
1.5
2
0.4
3
4
5
0.2
10
0.2
0
0.6 0.8 1
1.5 2
3 45
10
∞
–10
–0.2
–5
–4
Condition : VCE = 5 V, IC = 5, 20 mA, ZO = 50 Ω
–3
–0.4
–2
–0.6
–0.8 –1
–1.5
200 to 2000 MHz (200 MHz Step)
(IC = 5 mA)
(IC = 20 mA)
S12-Parameter vs. Frequency
90°
120°
60°
150°
Scale : 0.05/div.
30°
180°
0°
–150°
–30°
Condition : VCE = 5 V, IC = 5, 20 mA, ZO = 50 Ω
–120°
–60°
–90°
200 to 2000 MHz (200 MHz Step)
(IC = 5 mA)
(IC = 20 mA)
5
2SC4592
S21-Parameter vs. Frequency
90°
120°
60°
Scale : 5/div.
150°
30°
180°
0°
–150°
–30°
Condition : VCE = 5 V, IC = 5, 20 mA, ZO = 50 Ω
–120°
200 to 2000 MHz (200 MHz Step)
(IC = 5 mA)
(IC = 20 mA)
–60°
–90°
S22-Parameter vs. Frequency
0.6
0.8
1
1.5
2
0.4
3
4
5
0.2
10
0.2
0
0.4 0.6 0.8 1
1.5 2
3 45
10
∞
–10
–0.2
–5
–4
Condition : VCE = 5 V, IC = 5, 20 mA, ZO = 50 Ω
–3
–0.4
–2
–0.6
–0.8 –0.1
6
–1.5
200 to 2000 MHz (200 MHz Step)
(IC = 5 mA)
(IC = 20 mA)
2SC4592
S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.893
–28.8
12.428
159.3
0.034
74.2
0.939
–17.2
200
0.788
–54.8
10.823
141.1
0.058
61.4
0.819
–31.5
300
0.693
–76.3
9.118
127.1
0.076
52.8
0.699
–41.8
400
0.603
–94.1
7.714
116.9
0.087
47.9
0.602
–48.5
500
0.542
–110.1
6.565
108.8
0.094
45.3
0.531
–52.8
600
0.507
–122.6
5.693
102.5
0.100
44.0
0.478
–55.9
700
0.472
–133.8
5.002
96.9
0.105
43.2
0.437
–58.5
800
0.454
–144.1
4.477
92.3
0.110
42.8
0.405
–60.8
900
0.443
–152.1
4.001
88.2
0.115
43.3
0.382
–62.5
1000
0.436
–160.1
3.660
84.2
0.119
44.1
0.363
–64.3
1100
0.423
–167.8
3.372
80.9
0.124
44.6
0.350
–65.9
1200
0.420
–174.8
3.100
77.7
0.129
45.5
0.340
–66.8
1300
0.419
178.6
2.882
74.7
0.134
46.4
0.336
–68.2
1400
0.420
172.4
2.703
71.8
0.139
46.9
0.328
–69.9
1500
0.419
166.2
2.542
69.3
0.144
47.9
0.323
–71.3
1600
0.423
161.8
2.392
66.3
0.150
48.5
0.320
–72.0
1700
0.422
156.4
2.270
63.9
0.155
49.0
0.317
–74.2
1800
0.433
151.3
2.149
61.6
0.161
49.5
0.316
–76.0
1900
0.432
147.3
2.050
59.5
0.167
50.1
0.315
–77.4
2000
0.442
142.5
1.958
56.9
0.174
50.6
0.315
–79.0
7
2SC4592
S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω)
Freq.
S11
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.619
–64.2
31.361
137.5
0.025
63.5
0.729
–39.2
200
0.475
–104.2
20.515
116.0
0.036
56.8
0.483
–57.2
300
0.417
–128.3
14.505
105.1
0.045
57.8
0.356
–65.2
400
0.385
–145.2
11.189
98.3
0.054
60.1
0.287
–69.2
500
0.374
–157.4
9.053
93.4
0.063
61.6
0.245
–71.9
600
0.367
–166.9
7.608
89.6
0.072
62.8
0.220
–73.8
700
0.367
–175.4
6.547
86.1
0.081
64.1
0.201
–75.5
800
0.366
177.2
5.773
83.0
0.090
64.7
0.189
–77.2
900
0.369
172.0
5.121
80.6
0.100
64.9
0.181
–78.4
1000
0.368
166.2
4.632
77.9
0.109
65.1
0.175
–80.1
1100
0.369
160.6
4.238
75.3
0.119
65.3
0.171
–81.2
1200
0.373
155.7
3.897
73.2
0.128
65.1
0.168
–82.7
1300
0.377
151.2
3.616
71.0
0.137
65.1
0.167
–84.2
1400
0.382
146.9
3.369
68.8
0.147
64.5
0.167
–85.7
1500
0.384
142.1
3.154
66.8
0.156
64.1
0.168
–87.1
1600
0.386
138.7
2.960
64.5
0.166
63.5
0.168
–88.3
1700
0.391
133.7
2.803
62.9
0.175
63.0
0.169
–89.9
1800
0.401
130.6
2.662
60.6
0.185
62.4
0.171
–91.5
1900
0.405
127.4
2.533
59.1
0.193
61.7
0.172
–92.6
2000
0.408
12.8
2.416
57.0
0.202
61.1
0.175
–94.1
8
S21
S12
S22
Unit: mm
0.95
0 – 0.1
0.65
0.1
0.6 +– 0.05
0.16 – 0.06
2.8
1.5 ± 0.15
+ 0.1
0.4 – 0.05
+ 0.1
0.65
+ 0.1
0.4 – 0.05
0.4 – 0.05
+ 0.2
– 0.6
+ 0.1
2.95 ± 0.2
1.9 ± 0.2
0.95 0.95
0.85
1.1 – 0.1
+ 0.2
0.3
1.8 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK-4
—
Conforms
0.013 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
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products.
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