HITACHI 2SC2512

2SC2512
Silicon NPN Triple Diffused
Application
• VHF Amplifier
• VHF TV Tuner, Mixer
Outline
TO-92 (2)
1. Base
2. Emitter
3. Collector
3
2
1
2SC2512
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
20
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
3
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
µA
VCB = 10 V, IE = 0
Collector to emitter saturation
voltage
VCE(sat)
—
—
1
V
I C = 20 mA, IB = 4 mA
DC current transfer ratio
hFE
30
—
—
Reverse transfer capacitance
Cre
—
0.35
0.45
pF
VCB = 10 V, Emitter common,
f = 1 MHz
Gain bandwidth product
fT
600
900
—
MHz
VCE = 10 V, IC = 10 mA
Base time constant
rbb’ • CC
—
—
20
ps
VCB = 10 V, IC = 5 mA,
f = 31.8 MHz
Conversion gain
CG
16
20
—
dB
VCC = 12 V, IC = 2 mA,
f in = 200 MHz,
f OSC = 260 MHz,
f out = 60 MHz
Noise figure
NF
—
3.8
5.5
dB
VCC = 12 V, IC = 2 mA,
f OSC = 260 MHz, Rg = 50 Ω,
f in = 200 MHz
2
VCE = 10 V, IC = 10 mA
2SC2512
DC Current Transfer Ratio vs.
Collector Current
100
300
DC Current Transfer Ratio hFE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
200
100
VCE = 10 V
80
60
40
20
0
1
100
150
50
Ambient Temperature Ta (°C)
0
800
600
400
200
0
10
20
Collector Current IC (mA)
50
Reverse Transfer Capacitance Cre (pF)
Gain Bandwidth Product fT (MHz)
VCE = 10 V
5
10
20
50
Reverse Transfer Capacitance vs.
Collector to Base Voltage
1,000
2
5
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
1
2
5
f = 1 MHz
Emitter Common
2
1.0
0.5
0.2
0.1
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
3
2SC2512
Conversion Gain vs. Collector Current
Noise Figure vs. Collector Current
10
VCC = 12 V
fosc = 260 MHz (0 dBm)
fin = 200 MHz
fout = 60 MHz
Rg = 50 Ω
26
22
Noise Figure NF (dB)
Conversion Gain CG (dB)
30
18
14
VCC = 12 V
fosc = 260 MHz (0 dBm)
fin = 200 MHz
Rg = 50 Ω
8
6
4
2
10
0
2
6
4
8
10
0
1
Collector Current IC (mA)
2
Noise Figure, Conversion Gain vs.
Oscillating Injection Voltage
30
IC = 2 mA
VCC = 12 V
fosc = 260 MHz
fin = 200 MHz
Rg = 50 Ω
8
6
20
4
NF
CG
0
–15
10
–5
5
Oscillating Injection Voltage Vinj (dBm)
4
Conversion Gain CG (dB)
Noise Figure NF (dB)
10
2
3
4
Collector Current IC (mA)
5
2SC2512
Conversion Gain, Noise Figure Test Circuit
fOSC Input
R2
VCC
C1
L4
L5 C8
L2 C2
Input
C3
R1
L3
L1
C4
C6
C5
C7
C9
Output
R1 : 330 Ω (1/4 W)
R2 : 560 Ω (1/4 W)
L1 : φ0.8 mm Copper wire with Enamel 8 Turns
inside dia φ3 mm
L2 : φ0.8 mm Copper wire with Enamel 5 Turns
inside dia φ3 mm
L3 : φ0.5 mm Copper wire with Enamel 3.5 Turns
inside dia φ3 mm
L4 : Outside dia φ5 mm used Ferrite Core, φ0.2 mm
Copper wire with Enamel 6.5 Turns
L5 : φ0.2 mm Copper wire with Enamel 13 Turns
inside dia φ5 mm
VBB
Parts Specification
C1 : 1.5 pF
C2 : 57 pF
C3 : 17 pF
C4 : 1000 pF
C5 : 2200 pF
C6 : 22 pF
C7 : 80 pF
C8 : 18 pF
C9 : 20 pF
5
Unit: mm
4.8 ± 0.3
2.3 Max
0.7
0.60 Max
0.45 ± 0.1
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.