NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A (PNP) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 2222 SMBT 2222 A s1B s1P Q68000-A6481 Q68000-A6473 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit SMBT 2222 SMBT 2222 A Collector-emitter voltage VCE0 30 40 Collector-base voltage VCB0 60 75 Emitter-base voltage VEB0 5 6 Collector current IC 600 mA Total power dissipation, TS = 77 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 290 Junction - soldering point Rth JS ≤ 220 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 2222 SMBT 2222 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA SMBT 2222 SMBT 2222 A V(BR)CE0 Collector-base breakdown voltage IC = 10 µA SMBT 2222 SMBT 2222 A V(BR)CB0 Emitter-base breakdown voltage IE = 10 µA SMBT 2222 SMBT 2222 A V(BR)EB0 Collector cutoff current VCB = 50 V VCB = 60 V VCB = 50 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C ICB0 30 40 – – – – 60 75 – – – – 5 6 – – – – – – – – – – – – 10 10 10 10 nA nA µA µA – – 10 nA SMBT 2222 SMBT 2222 A 35 50 75 50 100 30 40 – – – – – – – – – – – 300 – – SMBT 2222 A 35 – – SMBT 2222 SMBT 2222 A SMBT 2222 SMBT 2222 A Emitter cutoff current VEB = 3 V IEB0 DC current gain IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 1 V1) IC = 150 mA, VCE = 10 V1) IC = 500 mA, VCE = 10 V1) hFE IC = 10 mA, VCE = 10 V, TA = 55 ˚C Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA SMBT 2222 SMBT 2222 A IC = 500 mA, IB = 50 mA SMBT 2222 SMBT 2222 A VCEsat Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA SMBT 2222 SMBT 2222 A IC = 500 mA, IB = 50 mA SMBT 2222 SMBT 2222 A VBEsat 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group V 2 – V – – – – – – – – 0.4 0.3 1.6 1.0 – 0.6 – – – – – – 1.3 1.2 2.6 2.0 SMBT 2222 SMBT 2222 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz SMBT 2222 SMBT 2222 A fT Output capacitance VCB = 10 V, f = 1 MHz Cobo Input capacitance VEB = 0.5 V, f = 1 MHz Cibo SMBT 2222 SMBT 2222 A Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz MHz 250 300 – – – – – – 8 – – – – 30 25 pF kΩ h11e SMBT 2222 A 2 – 8 SMBT 2222 A 0.25 – 1.25 IC = 10 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz SMBT 2222 A IC = 10 mA, VCE = 10 V, f = 1 kHz SMBT 2222 A h12e Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz SMBT 2222 A IC = 10 mA, VCE = 10 V, f = 1 kHz SMBT 2222 A h21e Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz h22e 10–4 – – 8.0 – – 4.0 – 50 – 300 75 – 375 µS SMBT 2222 5 – 35 SMBT 2222 A 25 – 200 IC = 10 mA, VCE = 10 V, f = 1 kHz Collector-base time constant IE = 20 mA, VCB = 10 V, f = 31.8 MHz SMBT 2222 A rb'Cc – – 150 ps Noise figure IC = 100 µA, VCE = 10 V, RS = 1 kΩ f = 1 kHz SMBT 2222 A F – – 4.0 dB Semiconductor Group 3 SMBT 2222 SMBT 2222 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. td tr – – – – 10 25 ns ns tstg tf – – – – 225 60 ns ns AC characteristics (continued) VCC = 30 V, IC = 150 mA, IB1 = 15 mA VBE(off) = 0.5 V Delay time Rise time VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA Storage time Fall time Test circuits Delay and rise time Oscillograph: Semiconductor Group Storage and fall time R > 100 Ω C < 12 pF tr < 5 ns 4 SMBT 2222 SMBT 2222 A Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance Ccb = f (VCB) f = 1 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 20 V Semiconductor Group 5 SMBT 2222 SMBT 2222 A Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 DC current gain hFE = f (IC) VCE = 10 V Delay time td = f (IC) Rise time tr = f (IC) Storage time tstg = f (IC) Fall time tf = f (IC) Semiconductor Group 6