NPN Silicon Switching Transistor PZT 3904 High DC current gain 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: PZT 3906 (PNP) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3904 ZT 3904 Q62702-Z2029 B SOT-223 C E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 60 Emitter-base voltage VEB0 6 Collector current IC 200 mA Total power dissipation, TS = 72 ˚C Ptot 1.5 W Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 122 Junction - soldering point Rth JS ≤ 52 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 PZT 3904 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CE0 40 – – Collector-base breakdown voltage IC = 10 µA, IB = 0 V(BR)CB0 60 – – Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EB0 6 – – Collector-base cutoff current VCB = 30 V, IE = 0 ICB0 – – 50 Collector-emitter cutoff current VCE = 30 V, – VBE = 0.5 V ICEV – – 50 Base-emitter cutoff current VCE = 30 V, – VBE = 0.5 V IBEV – – 50 DC current gain1) IC = 0.1 mA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V hFE 40 70 100 60 30 – – – – – – – 300 – – Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCEsat Base-emitter saturation voltage1) IC = 10 mA, IC = 1 mA IC = 50 mA, IC = 5 mA VBEsat 1) Pulse test conditions: t ≤ 300 µs, D = 2 % Semiconductor Group 2 V nA – V – – – – 0.2 0.3 – – – – 0.85 0.95 PZT 3904 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz fT 300 – – MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Cobo – – 4 pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo – – 8 Noise figure IC = 100 µA, VCE = 5 V, RS = 1 kΩ, f= 10 Hz to 15.7 kHz F – – 5 dB Input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz h11e 1 – 10 kΩ Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz h12e 0.5 – 8 10– 4 Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz h21e 100 – 400 – Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz h22e 1 – 40 µS td tr – – – – 35 35 ns ns tstg tf – – – – 200 50 ns ns VCC = 3 V, IC = 10 mA, IB1 = 1 mA VBE(off) = 0.5 V Delay time Rise time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Storage time Fall time (see diagrams) Semiconductor Group 3 PZT 3904 Switching Times Turn-on time when switched from – VBEoff = 0.5 V to VBEon = 10.6 V, ICon = 10 mA; IBon = 1 mA Input waveform; tr < 1 ns; tp = 300 ns; = 0.02. Delay and rise time test circuit; total shunt capacitance of test jig and connectors CS < 4 pF; scope impedance = 10 MΩ. δ Turn-off time ICon = 10 mA; IBon = – IBoff = 1 mA Input waveform; tf < 1 ns; 10 µs < tp ≤ 500 µs; δ = 0.02. Semiconductor Group Storage and fall time test circuit; total shunt capacitance of test jig and connectors CS < 4 pF; scope impedance = 10 MΩ. 4 PZT 3904 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 Permissible pulse load Ptot max / Ptot DC = f (tp) DC current gain hFE = f (IC) VCE = 10 V, normalized Semiconductor Group 5