SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3906S (PNP) 2 1 3 VPS05604 Type Marking Ordering Code Pin Configuration SMBT 3904S s1A 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Q62702-A1201 Package Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 60 Emitter-base voltage VEBO 6 DC collector current IC 200 mA Total power dissipation, T S = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg V - 65...+150 Thermal Resistance Junction ambient 1) RthJA ≤275 Junction - soldering point RthJS ≤140 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 SMBT 3904S Electrical Characteristics at TA =25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CEO 40 - - V(BR)CBO 60 - - Emitter-base breakdown voltage V(BR)EBO 6 - - I E = 10 µA, I C = 0 Collector cutoff current ICBO - - 50 DC Characteristics Collector-emitter breakdown voltage V I C = 1 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 nA VCB = 30 V, I E = 0 DC current gain 1) - hFE I C = 100 µA, V CE = 1 V I C = 1 mA, V CE = 1 V 40 - - 70 - - I C = 10 mA, VCE = 1 V 100 - 300 I C = 50 mA, VCE = 1 V 60 - - I C = 100 mA, V CE = 1 V 30 - - Collector-emitter saturation voltage1) V VCEsat I C = 10 mA, I B = 1 mA - - 0.2 I C = 50 mA, I B = 5 mA - - 0.3 I C = 10 mA, I B = 1 mA 0.65 - 0.85 I C = 50 mA, I B = 5 mA - - 0.95 Base-emitter saturation voltage 1) VBEsat 1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 SMBT 3904S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 300 - - MHz Ccb - - 4 pF Ceb - - 8 h11e 1 - 10 kΩ h12e 0.5 - 8 10-4 h21e 100 - 400 - h22e 1 - 40 µs F - - 5 dB td - - 35 ns tr - - 35 tstg - - 200 tf - - 50 AC Characteristics Transition frequency fT I C = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance I C = 1 mA, V CE = 10 V, f = 1 kHz Open-circuit reverse voltage transfer ratio I C = 1 mA, V CE = 10 V, f = 1 kHz Short-circuit forward current transfer ratio I C = 1 mA, V CE = 10 V, f = 1 kHz Open-circuit output admittance I C = 1 mA, V CE = 10 V, f = 1 kHz Noise figure I C = 100 µA, V CE = 5 V, R S = 1 kΩ, f = 1 kHz, ∆ f = 200 Hz Delay time VCC = 3 V, I C = 10 mA, I B1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, I C = 10 mA, I B1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, I C = 10 mA, I B1=I B2 = 1mA Fall time VCC = 3 V, I C = 10 mA, I B1=I B2 = 1mA Semiconductor Group Semiconductor Group 33 Sep-07-1998 1998-11-01 SMBT 3904S Test circuit Delay and rise time +3.0 V 275 Ω D = 2% +10.9 V 300 ns 0 10 k Ω C -0.5 V <4.0 pF <1.0 ns EHN00061 Storage time and fall time +3.0 V t1 10 < t 1 < 500 µs D = 2% 275 Ω +10.9 V 0 -9.1 V 10 kΩ C <4.0 pF 1N916 <1.0 ns Semiconductor Group Semiconductor Group EHN00062 44 Sep-07-1998 1998-11-01 SMBT 3904S Total power dissipation Ptot = f (TA *;TS ) * Package mounted on epoxy 300 mW P tot TS 200 TA 150 100 50 0 0 20 40 60 80 120 °C 100 Kein 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f (tp) Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 55 Sep-07-1998 1998-11-01 SMBT 3904S DC current gain h FE = f (I C) Saturation voltage IC = f (VBEsat, VCEsat) VCE = 10V, normalized h FE = 10 EHP00765 10 1 h FE EHP00756 2 ΙC 5 mA 10 2 5 125 C V BE V CE 25 C 10 0 10 1 -55 C 5 5 10 -1 10 -1 5 10 0 5 10 1 10 0 mA 10 2 2 0 0.2 0.4 0.6 ΙC 0.8 1.0 V 1.2 V BE sat , V CE sat Short-circuit forward current Open-circuit output admittance transfer ratio h 21e = f(I C) h 22e = f (IC) VCE = 10V, f = 1MHz VCE = 10V, f = 1MHz EHP00759 10 3 EHP00760 10 2 µs h 21e h 22e 5 5 10 2 10 1 5 5 10 1 -1 10 5 10 0 mA 10 10 0 -1 10 1 ΙC Semiconductor Group Semiconductor Group 66 5 10 0 mA ΙC 10 1 Sep-07-1998 1998-11-01 SMBT 3904S Delay time t d = f (IC) Storage time t stg = f(IC) Rise time t r = f (I C) EHP00761 10 3 EHP00762 10 3 ns ns t r ,t d tr td ts 25 C 125 C h FE = 10 10 2 h FE = 20 10 10 2 VCC = 3 V h FE = 20 10 40 V 15 V 10 1 10 1 V BE = 2 V 0V 10 0 0 10 5 10 1 5 10 2 10 0 0 10 mA 10 3 5 10 1 5 10 2 mA 10 3 ΙC ΙC Fall time t f = f (I C) Rise time tr = f (IC) EHP00764 10 3 ns tr 25 C 10 2 VCC = 40 V h FE = 10 125 C 10 1 10 0 0 10 5 10 1 5 10 2 mA 10 3 ΙC Semiconductor Group Semiconductor Group 77 Sep-07-1998 1998-11-01 SMBT 3904S Input impedance Open-circuit reverse voltage h 11e = f (IC) transfer ratio h12e = f (I C) VCE = 10V, f = 1kHz VCE = 10V, f = 1kHz EHP00757 10 2 h 11e EHP00758 10 -3 kΩ h 12e 10 1 5 10 -4 5 10 0 5 10 -1 10 -1 5 10 0 mA 10 -5 10 1 10 5 10 0 mA 10 1 ΙC ΙC Semiconductor Group Semiconductor Group -1 88 Sep-07-1998 1998-11-01