BAS 16W Silicon Switching Diode • For high speed switching applications Type Marking Ordering Code Pin Configuration BAS 16W A6s 1=A Q62702-A1050 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current IF 250 Surge forward current, t = 1 µs IFS 4.5 Total Power dissipation Ptot TS ≤ 119 °C Values Unit V mA mW 250 Junction temperature Tj Storage temperature Tstg 150 °C - 65 ... + 150 Thermal Resistance Junction ambient 1) Junction - soldering point RthJA ≤ 260 RthJS ≤ 125 K/W 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-28-1996 BAS 16W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Breakdown voltage V(BR) I(BR) = 100 µA Forward voltage V 75 - - VF mV IF = 1 mA - - 715 IF = 10 mA - - 855 IF = 50 mA - - 1000 IF = 150 mA - - 1250 Reverse current IR µA VR = 70 V, TA = 25 °C - - 1 VR = 25 V, TA = 150 °C - - 30 VR = 75 V, TA = 150 °C - - 50 AC characteristics Diode capacitance CD VR = 0 V, f = 20 MHz Reverse recovery time pF - - 2 trr ns IF = 10 mA, IR = 10 mA, RL = 100 Ω trr measured at 1 mA Semiconductor Group - 2 - 6 Nov-28-1996 BAS 16W Forward current IF = f (TA*;TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25°C 300 mA IF TS TA 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load IFmax/IFDC = f(tp) 10 2 10 3 K/W RthJS IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -6 10 10 -5 10 -4 Semiconductor Group 10 -3 10 -2 -1 10 s 10 tp 0 3 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Nov-28-1996 BAS 16W Forward voltage VF = f (TA) Semiconductor Group Reverse current IR = f (TA) 4 Nov-28-1996