Transistor 2SB1207 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 4.0±0.2 (Ta=25˚C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –10 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1 2 3 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 ● Low collector to emitter saturation voltage VCE(sat). Optimum for high-density mounting. Allowing supply with the radial taping. 0.7±0.1 ● +0.2 0.45–0.1 ● 3.0±0.2 ■ Features 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit –100 nA Collector cutoff current ICBO VCB = –10V, IE = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –15 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –10 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V hFE Forward current transfer ratio *1 hFE2 VCE = –2V, IC = –0.5A*2 VCE = –2V, IC = –1A*2 130 350 60 Collector to emitter saturation voltage VCE(sat) IC = –0.4A, IB = –8mA – 0.16 – 0.3 V Base to emitter saturation voltage VBE(sat) IC = –0.4A, IB = –8mA – 0.8 –1.2 V Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 130 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 22 MHz pF *2 *1h FE1 Pulse measurement Rank classification Rank R S hFE1 130 ~ 220 180 ~ 350 1 Transistor 2SB1207 PC — Ta IC — VCE IB=–10mA –1.0 400 –9mA –8mA –7mA 350 – 0.8 300 –6mA –5mA – 0.6 250 200 –4mA –3mA – 0.4 150 100 –2mA – 0.2 –1mA 50 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –1 –2 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.1 – 0.03 –1 –3 –10 Collector current IC (A) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 60 50 40 30 20 10 –10 –30 –100 Collector to base voltage VCB (V) Ta=–25˚C 75˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 200 500 300 –3 –10 VCB=–10V Ta=25˚C 180 400 –1 Collector current IC (A) fT — I E Ta=75˚C 25˚C –25˚C 200 100 160 140 120 100 80 60 40 20 0 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) 80 –3 25˚C –1 VCE=–2V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –30 0 –1 –6 –3 – 0.1 600 IC/IB=50 70 –5 –10 hFE — IC –100 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –4 –30 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –3 IC/IB=50 – 0.3 Transition frequency fT (MHz) 0 Base to emitter saturation voltage VBE(sat) (V) Ta=25˚C 450 0 2 VBE(sat) — IC –100 –1.2 Collector current IC (A) Collector power dissipation PC (mW) 500 –10 1 3 10 30 Emitter current IE (mA) 100