Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 4.0±0.2 ■ Features marking (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation (Ta=25˚C) PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1 2 3 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 ● Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Conditions Symbol min typ Unit 100 nA ICBO Collector to base voltage VCBO IC = 10µA, IE = 0 25 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 12 hFE1*1 VCE = 2V, IC = 0.5A*2 200 hFE2 VCE = 2V, IC = 1A*2 60 VCE(sat) IC = 500mA, IB = 20mA*2 Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 20mA*2 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz ON resistanse Ron*3 Forward current transfer ratio Collector to emitter saturation voltage VCB = 25V, IE = 0 max Collector cutoff current V 800 0.13 0.4 1.2 FE1 MHz 10 pF Ω 0.6 *3R on Rank classification V 200 *2 *1h V Pulse measurement Measurement circuit 1kΩ Rank R S T hFE1 200 ~ 350 300 ~ 500 400 ~ 800 IB=1mA VB Ron= VV VA f=1kHz V=0.3V VB ✕1000(Ω) VA–VB 1 Transistor 2SD1450 PC — Ta IC — VCE 2.0 400 300 200 100 1.6 IB=4.0mA 3.5mA 1.2 3.0mA 2.5mA 2.0mA 0.8 1.5mA 1.0mA 0.4 0.5mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 8 10 3 1 Ta=75˚C 25˚C –25˚C 0.03 0.3 1 3 600 25˚C –25˚C 400 200 0.03 0.1 0.3 1 3 10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 8 4 VCE=10V GV=80dB Function=FLAT 100 Noise voltage NV (mV) 12 80 Rg=100kΩ 60 22kΩ 40 5kΩ 20 0 30 100 Collector to base voltage VCB (V) 0.3 1 3 10 350 300 250 200 150 100 0 0.01 0.03 0.1 0.3 Collector current IC (mA) 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) NV — IC 120 16 0.1 Collector current IC (A) 50 Cob — VCB 10 0.1 VCB=10V Ta=25˚C Ta=75˚C 0 0.01 0.03 10 20 3 75˚C 0.3 400 800 Collector current IC (A) 1 25˚C Ta=–25˚C fT — I E 1000 10 0.1 1 VCE=2V Forward current transfer ratio hFE 30 0.01 0.01 0.03 3 0.01 0.01 0.03 12 1200 IC/IB=25 0.1 10 hFE — IC 100 0.3 IC/IB=10 30 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 6 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Base to emitter saturation voltage VBE(sat) (V) 100 Ta=25˚C 0 2 VBE(sat) — IC 2.4 Collector current IC (A) Collector power dissipation PC (mW) 500 1 –100