Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.0±0.2 4.0±0.2 ● ● Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7±0.2 ● 8.0±0.2 ■ Features ■ Absolute Maximum Ratings 13.5±0.5 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V Peak collector current ICP 8 A 1 2 3 Collector current IC 5 A 2.54±0.15 Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.15 ■ Electrical Characteristics 1.27 1.27 +0.15 0.45 –0.1 2.3±0.2 0.45 –0.1 1:Emitter 2:Collector 3:Base TO–92NL Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 µA Emitter cutoff current IEBO VEB = 7V, IC = 0 0.1 µA Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V hFE1 Forward current transfer ratio *1 VCE = 2V, IC = 0.5A*2 hFE2 VCE = 2V, IC = 2A*2 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.1A*2 Transition frequency fT VCB = 6V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz 230 600 150 1 150 50 *2 *1h FE1 V MHz pF Pulse measurement Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 1 2SD1934 Transistor PC — Ta IC — VCE 1.2 IC — VBE 2.4 6 VCE=2V IB=7mA 2.0 0.8 0.6 0.4 0.2 6mA 1.6 5mA 4mA 1.2 3mA 0.8 2mA 0.4 0 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.4 1 Ta=75˚C 25˚C –25˚C 0.1 0.03 0.01 0.003 0.1 0.3 1 3 10 Collector current IC (A) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 80 60 40 20 0 3 10 30 100 Collector to base voltage VCB (V) 2 1.2 1.6 2.0 2 2.4 0 0.4 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) fT — I E 400 VCB=6V Ta=25˚C VCE=2V 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 350 300 250 200 150 100 50 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 100 1 0.8 600 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 3 0.001 0.01 0.03 3 hFE — IC IC/IB=30 0.3 4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 –25˚C 0 0 Transition frequency fT (MHz) 20 Ta=75˚C 1 1mA 0 0 25˚C 5 Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C 10 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Emitter current IE (A) –10