Transistor 2SB1592 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 4.0±0.2 ● ● 0.7±0.2 ■ Features 8.0±0.2 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –25 V Emitter to base voltage VEBO –11 V Peak collector current ICP* –10 A Collector current IC –3 A 1 2 3 Collector power dissipation PC 1 W 2.54±0.15 Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C * Applied 13.5±0.5 0.7±0.1 +0.15 1.27 1.27 +0.15 0.45 –0.1 2.3±0.2 0.45 –0.1 1:Emitter 2:Collector 3:Base TO–92NL Package are shot pulse of ≤1ms width ■ Electrical Characteristics (Ta=25˚C) Symbol Parameter Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –30 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –25 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –11 Forward current transfer ratio hFE*1 VCE = –2V, IC = –1.4A*2 90 Collector to emitter saturation voltage VCE(sat) IC = –1.4A, IB = –25mA*2 Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz V 450 – 0.16 FE V MHz 85 *2 *1h – 0.22 150 pF Pulse measurement Rank classification Rank Q R hFE 90 ~ 180 130 ~ 450 1 Transistor 2SB1592 PC — Ta IC — VCE 1.2 IC — VBE –3.0 –6 VCE=–2V –2.5 0.8 0.6 0.4 0.2 –5 IB=–12mA –2.0 –10mA –1.5 –8mA –6mA –1.0 –4mA – 0.5 0 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) –1 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.03 –1 –3 –10 Collector current IC (A) Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25˚C 200 160 120 80 40 0 –1 –3 –10 –4 –5 –6 0 –30 –100 Collector to base voltage VCB (V) – 0.2 – 0.4 – 0.6 – 0.8 –1.0 600 500 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 – 0.01 – 0.03 – 0.1 – 0.3 –1.2 Base to emitter voltage VBE (V) fT — I E –1 –3 Collector current IC (A) Cob — VCB 240 –3 VCB=–6V f=200MHz Ta=25˚C VCE=–2V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –2 600 IC/IB=56 – 0.1 –2 hFE — IC –100 –25˚C –3 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 Ta=75˚C 0 0 Transition frequency fT (MHz) 20 25˚C –4 –1 –2mA 0 0 2 Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C –10 500 400 300 200 100 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Emitter current IE (mA) –10